Junfeng Gao

Structures, mobilities, electronic and magnetic properties of point defects in silicene

In the fabrication and processing of silicene monolayers, structural defects are almost inevitable. Using ab initio calculations, we systemically investigated the structures, formation energies, migration behaviors and electronic/magnetic properties of typical point defects in silicene, including the Stone-Wales (SW) defect, single and double vacancies (SVs and DVs), and adatoms. We found that SW can be effectively recovered by thermal annealing. SVs have much higher mobility than DVs and two SVs are very likely to coalesce into one DV to lower the energy. Existence of SW and DVs may induce small gaps in silicene, while the SV defect may transform semimetallic silicene into metallic. Adatoms are unexpectedly stable and can affect the electronic properties of silicene dramatically. Especially, Si adatoms as self-dopants in silicene sheets can induce long-range spin polarization as well as a remarkable band gap, thus achieving an all-silicon magnetic semiconductor. The present theoretical results provide valuable insights into identification of these defects in experiments and understanding their effects on the physical properties of silicene.

From Boron Cluster to Two-Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation

As attractive analogue of graphene, boron monolayers have been theoretically predicted. However, due to electron deficiency of boron atom, synthesizing boron monolayer is very challenging in experiments. Using first-principles calculations, we explore stability and growth mechanism of various boron sheets on Cu(111) substrate. The monotonic decrease of formation energy of boron cluster BN with increasing cluster size and low diffusion barrier for a single B atom on Cu(111) surface ensure continuous growth of two-dimensional (2D) boron cluster. During growth process, hexagonal holes can easily arise at the edge of a 2D triangular boron cluster and then diffuse entad. Hence, large-scale boron monolayer with mixed hexagonal-triangular geometry can be obtained via either depositing boron atoms directly on Cu(111) surface or soft landing of small planar BN clusters. Our theoretical predictions would stimulate further experiments of synthesizing boron sheets on metal substrates and thus enrich the variety of 2D monolayer materials.

The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration

Phosphorene, a new two-dimensional (2D) semiconductor, has received much interest due to its robust direct band gap and high charge mobility. Currently, however, phosphorene can only be produced by mechanical or liquid exfoliation, and it is still a significant challenge to directly epitaxially grow phosphorene, which greatly hinders its mass production and, thus, applications. In epitaxial growth, the stability of nanoscale cluster or flake on a substrate is crucial. Here, we perform ab initio energy optimizations and molecular dynamics simulations to explore the critical role of substrate on the stability of a representative phosphorene flake. Our calculations show that the stability of the phosphorene nanoflake is strongly dependent on the interaction strength between the nanoflake and substrate. Specifically, the strong interaction (0.75 eV/P atom) with Cu(111) substrate breaks up the phosphorene nanoflake, while the weak interaction (0.063 eV/P atom) with h-BN substrate fails to stabilize its 2D structure. Remarkably, we find that a substrate with a moderate interaction (about 0.35 eV/P atom) is able to stabilize the 2D characteristics of the nanoflake on a realistic time scale. Our findings here provide useful guidelines for searching suitable substrates for the directly epitaxial growth of phosphorene.

Silicene on substrates: interaction mechanism and growth behavior

Silicene, a monolayer of silicon atom assembling in a honeycomb lattice, has attracted more and more attention due to its outstanding electronic properties. The recently successful synthesis of silicene on several metal surfaces takes a big step towards the utilization of silicene in the future microelectronic devices. On the roadmap for the applications of silicene, two critical issues have to be addressed: (1) how to improve the quality of silicene; (2) how to preserve the extraordinary electronic properties of silicene. These two problems can be solved by deeply understanding the substrate effect on silicene. In this review, we systematically discuss the substrate effect on the atomic structure and electronic properties of a silicene sheet as well as the growth behavior of silicene on Ag surface, which are important for both fabrication and application of silicene.

Nanotube-terminated zigzag edges of phosphorene formed by self-rolling reconstruction

The edge atomic configuration often plays an important role in dictating the properties of finite-sized two-dimensional (2D) materials. By performing ab initio calculations, we identify a highly stable zigzag edge of phosphorene, which is the most stable one among all the considered edges. Surprisingly, this highly stable edge exhibits a novel nanotube-like structure, which is topologically distinctively different from any previously reported edge reconstruction. We further show that this new edge type can form easily, with an energy barrier of only 0.234 eV. It may be the dominant edge type at room temperature under vacuum conditions or even under low hydrogen gas pressure. The calculated band structure reveals that the reconstructed edge possesses a bandgap of 1.23 eV. It is expected that this newly found edge structure may stimulate more studies in uncovering other novel edge types and further exploring their practical applications.Edge atomic configuration often plays an important role in dictating the properties of finite-sized two-dimensional (2D) materials. By performing ab initio calculations, we identify a highly stable zigzag edge of phosphorene, which is the most stable one among all the considered edges. Surprisingly, this highly stable edge exhibits a novel nanotube-like structure, which is topologically distinctively different from any previously reported edge reconstruction. We further show that this new edge type can form easily, with an energy barrier of only 0.234 eV. It may be the dominant edge type at room temperature in vacuum condition or even under low hydrogen gas pressure. The calculated band structure reveals that the reconstructed edge possesses a bandgap of 1.23 eV. It is expected that this newly found edge structure may stimulate more studies in uncovering other novel edge types and further exploring their practical applications.

Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, we study the stability of the structure of stanene in different epitaxial relations with respect to Ag(111) surface, and also the diffusion behavior of Sn adatom on Ag(111) surface. Our study reveals that: (1) the hexagonal structure of stanene monolayer is well reserved on Ag(111) surface; (2) the height of epitaxial stanene monolayer is comparable to the step height of the substrate, enabling the growth to cross the surface step and achieve a large-area stanene; (3) the perfect lattice structure of free-standing stanene can be achieved once the epitaxial stanene monolayer is detached from Ag(111) surface; and finally (4) the diffusion barrier of Sn adatom on Ag(111) surface is found to be only 0.041 eV, allowing the epitaxial growth of stanene monolayer even at low temperatures. Our above revelations strongly suggest that Ag(111) surface is an ideal candidate for growing large-area, high-quality monolayer stanene.

MoS2-graphene in-plane contact for high interfacial thermal conduction

Recent studies have indicated that two-dimensional (2D) MoS2 exhibits low in-plane and inter-plane thermal conductivities. This poses a significant challenge to heat management in MoS2-based electronic devices. To address this challenge, we have designed MoS2-graphene interfaces that fully utilize graphene, a 2D material that exhibits very high thermal conductivity. First, we performed ab initio atomistic simulations to understand bonding and structural stability at the interfaces. The interfaces that we designed, which were connected via strong covalent bonds between Mo and C atoms, were energetically stable. We then performed molecular dynamics simulations to investigate interfacial thermal conductance in these materials. Surprisingly, the interfacial thermal conductance was high and comparable to those of covalently bonded graphene-metal interfaces. Importantly, each interfacial Mo–C bond served as an independent thermal channel, enabling modulation of the interfacial thermal conductance by controlling the Mo vacancy concentration at the interface. The present work provides a viable heat management strategy for MoS2-based electronic devices.