Jung Gil Yang

Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes

The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact bias network. The fabricated InGaAs PIN MMIC phase shifter has demonstrated good performance characteristics such as a low insertion loss of less than 7.8 dB and a high P1 dB of 21.0 dBm compared to the previous results.

2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology

Compact SPST switches using an InGaAs PIN diode have been developed for broadband MMIC applications. The cut-off frequency which is a figure of merit of the InGaAs PIN diode is obtained to be 5.1 THz. Three different circuit schematics were designed to compare the switch performances. For high-performance of the InGaAs PIN switches, the bias networks and DC blocking capacitors are monolithically integrated. The InGaAs PIN switches were successfully fabricated by using a developed benzocyclobutene(BCB)-based multi-layer MMIC technology. The multi-layer structure and meandered microstrip line configuration effectively reduce the chip area of the SPST series-shunt-shunt type PIN switch to 0.92 times 0.70 mm2. The good microwave performance and broadband characteristics have been achieved from the fabricated MMIC switches.

Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure

This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm2. To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.

High-Linearity K-Band Absorptive-Type MMIC Switch Using GaN PIN-Diodes

This letter describes the design and fabrication of a high-linearity GaN PIN MMIC switch. In order to achieve good input/output matching and high-linearity characteristics at the K-band, a GaN PIN-diode-based switch was employed with an absorptive-type topology. The fabricated GaN PIN MMIC switch demonstrated good performance characteristics such as input/output return losses of higher than 10.5 dB and a high IIP3 of 52.0 dBm. To our knowledge, this is the first GaN PIN-diode based MMIC switch demonstrated up to the K-band.

A W-band InGaAs PIN-MMIC digital phase-shifter using a switched transmission-line structure

This paper describes the design and fabrication of a W-band InGaAs PIN-diode MMIC 4-bit phase shifter based on a switched delay line. In order to achieve low insertion loss and good phase shifting characteristics at W-band, the topology based on a switched delay-line is employed using a thin-film microstrip line structure. The fabricated phase shifter has demonstrated good performances such as an insertion loss less than 12.7 dB at a frequency range of 81 to 85 GHz with an intrinsic chip size of 1.93 × 0.80 mm2. To our knowledge, this is the first InGaAs PIN MMIC digital phase shifter demonstrated up to W-band.

An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics

A high-isolation broadband travelingwave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 × 0.8 mm2 including pads has been achieved by using the meandered microstrip lines.

Theoretical and Experimental Study of the InP/InGaAs PIN Diode for Millimeter-wave MMIC Applications

The DC and AC characteristics of InP/InGaAs PIN diodes have been investigated based on theoretical and experimental approaches. The switch performance of the PIN diode has been studied using a 2-D CAD simulator (Silvaco). Experimental data from a fabricated InP/InGaAs PIN diode was compared to the theoretical results. The developed InP/InGaAs PIN diode has demonstrated a 0.39 V turn on voltage, a 34 V breakdown voltage and a 5.23 THz cutoff frequency.

A New Compact 3-D Hybrid Coupler Using Multi-Layer Microstrip Lines at 15 GHz

This paper presents a new compact 90deg hybrid coupler using thin-film microstrip and inverted microstrip lines for monolithic microwave integrated circuit (MMIC) applications. In order to reduce an intrinsic circuit area of the hybrid coupler, a compact meandered line configuration and a new multi-layer structure design have been adopted. The configuration and structural dimensions of the multi-layer structure were designed and investigated through detailed 3D electromagnetic simulations. The proposed 3D hybrid coupler was realized using a developed benzocyclobutene (BCB)-based multi-layer MMIC technology. The intrinsic area of the fabricated 3D hybrid coupler is significantly reduced compared to that of a conventional hybrid coupler using the 2D meandered line configuration

High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes

This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 ㏈ of insertion loss and better than 11 ㏈ of input and output return loss in the frequency range of 43 to 47 ㎓. To the authors’ knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.