Jung-Hyun Kang

Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates. An in situ annealing step at high temperature after buffer layer growth improves the surface and structural properties of the buffer layer, which further improves the morphology of the GaAs nanowire growth. Through such optimizations we show that vertically aligned GaAs nanowires can be fabricated on Si(111) substrates and achieve the same structural and optical properties as GaAs nanowires grown directly on GaAs(111)B substrates.

Crystal Structure and Transport in Merged InAs Nanowires MBE Grown on (001) InAs

Molecular beam epitaxy growth of merging InAs nanowire intersections, that is, a first step toward the realization of a network of such nanowires, is reported. While InAs nanowires play already a leading role in the search for Majorana fermions, a network of these nanowires is expected to promote their exchange and allow for further development of this field. The structural properties of merged InAs nanowire intersections have been investigated using scanning and transmission electron microscope imaging. At the heart of the intersection, a sharp change of the crystal structure from wurtzite to perfect zinc blende is observed. The performed low-temperature conductance measurements demonstrate that the intersection does not impose an obstacle to current transport.

Transient Rayleigh scattering: a new probe of picosecond carrier dynamics in a single semiconductor nanowire.

Using a new technique, transient Rayleigh scattering, we show that measurements from a single GaAs/AlGaAs core-shell semiconductor nanowire provide sensitive and detailed information on the time evolution of the density and temperature of the electrons and holes after photoexcitation by an intense laser pulse. Through band filling, band gap renormalization, and plasma screening, the presence of a dense and hot electron-hole plasma directly influences the real and imaginary parts of the complex index of refraction that in turn affects the spectral dependence of the Rayleigh scattering cross-section in well-defined ways. By measuring this spectral dependence as a function of time, we directly determine the thermodynamically independent density and temperature of the electrons and holes as a function of time after pulsed excitation as the carriers thermalize to the lattice temperature. We successfully model the results by including ambipolar transport, recombination, and cooling through optic and acoustic phonon emission that quantify the hole mobility at ∼68,000 cm(2)/V·s, linear decay constant at 380 ps, bimolecular recombination rate at 4.8 × 10(-9) cm(3)/s and the energy-loss rate of plasma due to optical and acoustic phonon emission.

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

GaAs thin films grown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAs epitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAs films grown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of the epitaxial layer surface and reduce lattice defects in the thin films.

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

We acknowledge the financial support of the National Science Foundation through grants DMR-0806700, 0806572, 1105362, 1105121, and ECCS-1100489, and the Australian Research Council.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

Charge of a quasiparticle in a superconductor

Significance The charge of the quasiparticles in superconductors was never, to our knowledge, directly measured. Here, we used our experience and sensitive techniques in measuring the fractional excitations in the fractional quantum Hall effect via quantum shot noise, to measure the tunneling quasiparticles in a 1D superconductor–insulator–superconductor Josephson junction, and find their charge to be significantly less than that of an electron. Nonlinear charge transport in superconductor–insulator–superconductor (SIS) Josephson junctions has a unique signature in the shuttled charge quantum between the two superconductors. In the zero-bias limit Cooper pairs, each with twice the electron charge, carry the Josephson current. An applied bias VSD leads to multiple Andreev reflections (MAR), which in the limit of weak tunneling probability should lead to integer multiples of the electron charge ne traversing the junction, with n integer larger than 2Δ/eVSD and Δ the superconducting order parameter. Exceptionally, just above the gap eVSD ≥ 2Δ, with Andreev reflections suppressed, one would expect the current to be carried by partitioned quasiparticles, each with energy-dependent charge, being a superposition of an electron and a hole. Using shot-noise measurements in an SIS junction induced in an InAs nanowire (with noise proportional to the partitioned charge), we first observed quantization of the partitioned charge q = e*/e=n, with n = 1–4, thus reaffirming the validity of our charge interpretation. Concentrating next on the bias region eVSD∼2Δ, we found a reproducible and clear dip in the extracted charge to q ∼0.6, which, after excluding other possibilities, we attribute to the partitioned quasiparticle charge. Such dip is supported by numerical simulations of our SIS structure.

MBE growth of self-assisted InAs nanowires on graphene

Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were carefully studied by changing the substrate from bilayer graphene through buffer layer to quasi-free-standing monolayer graphene. The positional relation of the InAs NWs with the graphene substrate was determined. A 30{\deg} orientation configuration of some of the InAs NWs is shown to be related to the surface corrugation of the graphene substrate. InAs NW-based devices for transport measurements were fabricated, and the conductance measurements showed a semi-ballistic behavior. In Josephson junction measurements in the non-linear regime, Multiple Andreev Reflections were observed, and an inelastic scattering length of about 900 nm was derived.

Hot Electrons Regain Coherence in Semiconducting Nanowires

Understanding the behavior of electrons in semiconducting nanowires is hindered by difficulties in probing these delicate structures. Development of a portable chamber, which keeps the nanowires under ultrahigh vacuum from growth to measurement, allows for the first thorough study of electron phase coherence in a semiconducting nanowire.

Robust Epitaxial Al Coating of Reclined InAs Nanowires

It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.