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Dive into the research topics where Jung-Kun Lee is active.

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Featured researches published by Jung-Kun Lee.


Journal of Physical Chemistry Letters | 2013

Dye Sensitized Solar Cells for Economically Viable Photovoltaic Systems

Hyun Suk Jung; Jung-Kun Lee

TiO2 nanoparticle-based dye sensitized solar cells (DSSCs) have attracted a significant level of scientific and technological interest for their potential as economically viable photovoltaic devices. While DSSCs have multiple benefits such as material abundance, a short energy payback period, constant power output, and compatibility with flexible applications, there are still several challenges that hold back large scale commercialization. Critical factors determining the future of DSSCs involve energy conversion efficiency, long-term stability, and production cost. Continuous advancement of their long-term stability suggests that state-of-the-art DSSCs will operate for over 20 years without a significant decrease in performance. Nevertheless, key questions remain in regards to energy conversion efficiency improvements and material cost reduction. In this Perspective, the present state of the field and the ongoing efforts to address the requirements of DSSCs are summarized with views on the future of DSSCs.


Applied Physics Letters | 2002

Correlation between internal stress and ferroelectric fatigue in Bi4−xLaxTi3O12 thin films

Jung-Kun Lee; Chang-Hoon Kim; Hee-Sang Suh; Kug-Sun Hong

La-substituted bismuth titanate [Bi4−xLaxTi3O12(BLT)] films were synthesized using pulsed-laser deposition and ferroelectric fatigue phenomenon was investigated. The internal strain present in the films, which was analyzed through the evaluation of the x-ray diffraction peak, was partially responsible for the fatigue in BLT films. When x⩾0.75, the change in the internal strain was saturated and there was no significant degradation of switching charge, at least up to 1010 cycles. It revealed that the internal strain, as well as chemical stability of oxygen ions, contributed to the ferroelectric fatigue of the BLT films. The origin of the internal strain is discussed in terms of the lattice mismatch between bulk materials and thin films.


Journal of Applied Physics | 2002

Phase transitions and dielectric properties in A-site ion substituted (Na1/2Bi1/2)TiO3 ceramics (A=Pb and Sr)

Jung-Kun Lee; Kug Sun Hong; Chang Kyung Kim; Seung-Eek Park

The dielectric permittivity of A-site ion substituted (Na1/2Bi1/2)TiO3(A=Pb,Sr) solid solutions has been investigated with the aid of structural analysis. As the addition of PT increased, the first order characteristics of the phase transition appeared. In contrast, additions of ST made the solid solution exhibit relaxor ferroelectrics behavior. Microscopic structural analysis revealed that the dielectric properties were determined by cation ordering which controlled the translational symmetry and domain configuration. In the NBT–PT solid solution, A-site cations were randomly redistributed and macrodomains formed. However, the addition of ST distributed A-site cations with local ordering and divided the domains of NBT into micropolar regions. The contrasting effects of the addition of the Pb and Sr cations on the dielectric properties of NBT are discussed in terms of the polarizability and the tolerance factors as they relate to the perovskite structure.


Applied Physics Letters | 2006

Luminescent properties and reduced dimensional behavior of hydrothermally prepared Y2SiO5:Ce nanophosphors

D. W. Cooke; Jung-Kun Lee; Bryan L. Bennett; James R. Groves; L.G. Jacobsohn; E. A. McKigney; R. E. Muenchausen; M. Nastasi; Kurt E. Sickafus; Ming Tang; James A. Valdez; Jungsub Kim; Kug-Sun Hong

Hydrothermally prepared nanophosphor Y2SiO5:Ce crystallizes in the P21∕c structure, rather than the B2∕b structure observed in bulk material. Relative to bulk powder, nanophosphors of particle size ∼25–100nm diameter exhibit redshifts of the photoluminescence excitation and emission spectra, reduced self absorption, enhanced light output, and medium-dependent radiative lifetime. Photoluminescence data are consistent with reduced symmetry of the P21∕c structure and are not necessarily related to reduced dimensionality of the nanophosphor. In contrast, medium-dependent lifetime and enhanced light output are attributed to nanoscale behavior. Perturbation of the Ce ion electric field is responsible for the variable lifetime.


Applied Physics Letters | 2005

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Michael Nastasi; T. Höchbauer; Jung-Kun Lee; A. Misra; J.P. Hirth; Mark C Ridgway; Tamzin Lafford

H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum.


Nano Letters | 2014

Uniform and Ordered Copper Nanomeshes by Microsphere Lithography for Transparent Electrodes

Tongchuan Gao; Baomin Wang; Bo Ding; Jung-Kun Lee; Paul W. Leu

We report a comprehensive simulation and experimental study on the optical and electronic properties of uniform and ordered copper nanomeshes (Cu NMs) to determine their performance for transparent conductors. Our study includes simulations to determine the role of propagating modes in transmission and experiments that demonstrate a scalable, facile microsphere-based method to fabricate NMs on rigid quartz and flexible polyethylene terephthalate substrates. The fabrication method allows for precise control over NM morphology with near-perfect uniformity and long-range order over large areas on rigid substrates. Our Cu NMs demonstrate 80% diffuse transmission at 17 Ω/square on quartz, which is comparable to indium tin oxide. We also performed durability experiments that demonstrate these Cu NMs are robust from bending, heating, and abrasion.


ACS Applied Materials & Interfaces | 2015

Reduced Graphene Oxide/Mesoporous TiO2 Nanocomposite Based Perovskite Solar Cells

Gill Sang Han; Young Hyun Song; Young Un Jin; Jin-Wook Lee; Nam-Gyu Park; Bong Kyun Kang; Jung-Kun Lee; In Sun Cho; Dae Ho Yoon; Hyun Suk Jung

We report on reduced graphene oxide (rGO)/mesoporous (mp)-TiO2 nanocomposite based mesostructured perovskite solar cells that show an improved electron transport property owing to the reduced interfacial resistance. The amount of rGO added to the TiO2 nanoparticles electron transport layer was optimized, and their impacts on film resistivity, electron diffusion, recombination time, and photovoltaic performance were investigated. The rGO/mp-TiO2 nanocomposite film reduces interfacial resistance when compared to the mp-TiO2 film, and hence, it improves charge collection efficiency. This effect significantly increases the short circuit current density and open circuit voltage. The rGO/mp-TiO2 nanocomposite film with an optimal rGO content of 0.4 vol % shows 18% higher photon conversion efficiency compared with the TiO2 nanoparticles based perovskite solar cells.


Journal of Applied Physics | 2006

Optical property and Stokes’ shift of Zn1−xCdxO thin films depending on Cd content

Hong Seong Kang; Jae Won Kim; Jong Hoon Kim; Sang Yeol Lee; Yan Li; Jang-Sik Lee; Jung-Kun Lee; M. Nastasi; S. A. Crooker; Q. X. Jia

Ternary Zn1−xCdxO films were grown on (0001) sapphire substrates by pulsed laser deposition. The energy band gap of Zn1−xCdxO films decreases with increasing Cd content. An increase of Cd content also leads to the emission broadening, absorption edge broadening, and crystallinity degradation. The absorption edge and ultraviolet emission energy shift to lower energy from 3.357eVto3.295eV and 3.338eVto3.157eV, respectively, with increasing Cd content from 0.3% to 3% at 4K. The Stokes’ shift between the absorption and emission is observed and that indicates the increase of exciton localization with Cd content.


Journal of Colloid and Interface Science | 2003

Crystallization behaviors of nanosized MgO particles from magnesium alkoxides.

Hyun Suk Jung; Jung-Kun Lee; Jin Young Kim; Kug Sun Hong

The effects of the size of the alkoxy group on the thermal decomposition behavior of magnesium alkoxides (magnesium methoxide and ethoxide) and the crystallization behavior of MgO was investigated using thermogravimetry, Fourier-transformed infrared spectroscopy, X-ray powder diffraction, and transmission electron microscopy. As the size of the alkyl group increased, the decomposition temperature decreased and resultant MgO crystallization of the alkoxide precursor was enhanced. In an inert N(2) atmosphere, the decomposition temperature of magnesium ethoxide was about 260 degrees C, which was lower than that of magnesium methoxide by approximately 70 degrees C. The degree of the crystallization of MgO particles from the ethoxide was also significantly higher than that of the methoxide. This result is explained in terms of the O-R bonding strength of the alkoxide. With use of the Kissinger method, the activation energy for the thermal decomposition of magnesium alkoxide was found to be dependent on the size of the alkyl group. The activation energies were 161+/-23 and 130+/-24 kJ/mol for the magnesium methoxide and the magnesium ethoxide, respectively.


Applied Physics Letters | 2005

Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

Lin Shao; Y. Lin; Jung-Kun Lee; Q. X. Jia; Yongqiang Wang; M. Nastasi; Phillip E. Thompson; N. David Theodore; Paul K. Chu; T. L. Alford; J. W. Mayer; Peng Chen; S. S. Lau

We have developed an innovative approach without the use of ion implantation to transfer a high-quality thin Si layer for the fabrication of silicon-on-insulator wafers. The technique uses a buried strained SiGe layer, a few nanometers in thickness, to provide H trapping centers. In conjunction with H plasma hydrogenation, lift-off of the top Si layer can be realized with cleavage occurring at the depth of the strained SiGe layer. This technique avoids irradiation damage within the top Si layer that typically results from ion implantation used to create H trapping regions in the conventional ion-cut method. We explain the strain-facilitated layer transfer as being due to preferential vacancy aggregation within the strained layer and subsequent trapping of hydrogen, which lead to cracking in a well controlled manner.

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Kug Sun Hong

Seoul National University

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Michael Nastasi

Los Alamos National Laboratory

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M. Nastasi

Los Alamos National Laboratory

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Sangwook Lee

Kyungpook National University

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Kug-Sun Hong

Seoul National University

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Jae Yun Yi

Seoul National University

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Bo Ding

University of Pittsburgh

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Jun Hong Noh

Seoul National University

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