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Dive into the research topics where Junichiro Sakata is active.

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Featured researches published by Junichiro Sakata.


SID Symposium Digest of Technical Papers | 2009

15.2: Development of Driver-Integrated Panel Using Amorphous In-Ga-Zn-Oxide TFT

Takeshi Osada; Kengo Akimoto; Takehisa Sato; Masataka Ikeda; Masashi Tsubuku; Junichiro Sakata; Jun Koyama; Tadashi Serikawa; Shunpei Yamazaki

We designed, prototyped, and evaluated LCD integrated with a gate driver and a source driver using amorphous In-Ga-Zn-Oxide TFTs having bottom-gate bottom-contact structure, thereby obtaining TFTs with superior characteristics. Then, we prototyped the worlds first 4-inch QVGA LCD and integrated the gate driver and source driver on the display panel.


SID Symposium Digest of Technical Papers | 2009

21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer

Hiroki Ohara; Toshinari Sasaki; Kousei Noda; Shunichi Ito; Miyuki Sasaki; Yayoi Toyosumi; Yuta Endo; Shuhei Yoshitomi; Junichiro Sakata; Tadashi Serikawa; Shunpei Yamazaki

We have developed a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiOx with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.


SID Symposium Digest of Technical Papers | 2006

P-185: Low-Drive-Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

Hisao Ikeda; Junichiro Sakata; Masahiko Hayakawa; Tomoya Aoyama; Takahiro Kawakami; Koichiro Kamata; Yuji Iwaki; Satoshi Seo; Yumiko Noda; Ryoji Nomura; Shunpei Yamazaki

In this paper, we introduce a useful composite layer, comprising hole-transporting materials with molybdenum oxide. By using the composite as a buffer layer on an anode, an OLED with low drive voltage can be obtained, and pixel defect formation can be effectively suppressed.


SID Symposium Digest of Technical Papers | 2010

43.4: Low Power LC Display Using In-Ga-Zn-Oxide TFTs Based on Variable Frame Frequency

Seiko Amano; Hikaru Harada; Kengo Akimoto; Junichiro Sakata; Takeshi Nishi; Koji Moriya; Kenichi Wakimoto; Jun Koyama; Shunpei Yamazaki; Yoshiaki Oikawa; Terumasa Ikeyama; Masayuki Sakakura

By using an oxide semiconductor, we successfully prototyped a 3.4-inch QHD LCD panel including data and scan drivers; their power consumption is reduced by variable frame frequency (from 1/60 fps to 120 fps) depending on images. Low frame frequency in displaying still images on a PC monitor can reduce eyestrain.


SID Symposium Digest of Technical Papers | 2010

P‐143: Possibility of Reflective LC Display Using Oxide Semiconductor TFTs as Electronic Paper Display

Takeshi Nishi; Koji Moriya; Shuji Fukai; Yusuke Kubota; Kengo Akimoto; Junichiro Sakata; Koji Kusunoki; Ryo Arasawa; Kenichi Wakimoto; Jun Koyama; Shunpei Yamazaki; Yoshiaki Oikawa; Kenichi Okazaki; Masayuki Sakakura

We successfully prototyped a 3.4-inch QHD PDLCD panel integrally including data and scan drivers of oxide semiconductor TFTs and capable of displaying still images at 0.2 fps, which can be adopted to electronic paper displays. This panel can display both still images and moving images and reduce power consumption.


SID Symposium Digest of Technical Papers | 2010

7.3: Development of 3.4in. QHD LCD Having BluePhase LC and OxideSemiconductor TFTs

Takeshi Nishi; Tetsuji Ishitani; Akio Yamashita; Daisuke Kubota; Tomohiro Tamura; Kengo Akimoto; Junichiro Sakata; Hiroyuki Miyake; Jun Koyama; Shunpei Yamazaki; Yoshiaki Oikawa; Katsuaki Tochibayashi; Masayuki Sakakura

We fabricated a liquid crystal panel by combining a blue phase material having short response time with an TFT formed using an oxide semiconductor having high mobility and stable normallyoff characteristics. It was very effective to use a highdefinition InGaZnOxide TFT substrate that we had developed.


Archive | 2014

Light emitting element and display device

Hisao Ikeda; Hiroki Ohara; Makoto Hosoba; Junichiro Sakata; Shunichi Ito


Archive | 2012

Light-Emitting Element, Light-Emitting Device, and Electronic Device

Takahiro Kawakami; Tomoya Aoyama; Junichiro Sakata; Hisao Ikeda; Satoshi Seo; Yuji Iwaki


Archive | 2014

Light-emitting device and method for manufacturing light-emitting device

Shunpei Yamazaki; Kengo Akimoto; Junichiro Sakata; Yoshiharu Hirakata; Norihito Sone


Archive | 2014

Oxide semiconductor film and semiconductor device

Shunpei Yamazaki; Masayuki Sakakura; Ryosuke Watanabe; Junichiro Sakata; Kengo Akimoto; Akiharu Miyanaga; Takuya Hirohashi; Hideyuki Kishida

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Masashi Tsubuku

Schweitzer Engineering Laboratories

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Kenichi Okazaki

Tokyo University of Science

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