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international vacuum microelectronics conference | 1993

Fabrication Of Lateral Triode With Comb-shaped Field-emitter Arrays

Junji Itoh; Kazunari Ushiki; Kazuhiko Tsuburaya; Seigo Kanemaru

Ultrafast and radiation resistant device is one of the most promising application targets of vacuum microelectronics. For this purpose, we fabricated a new 1 teral triode with the combshaped field emitter array (FEA)lv27 and measured its triode characteristics. 3, The cross sectional diagram of the present triode is illustrated in Fig.1. The triode consists of the comb-shaped FEA made of 0.25-am-thick (t e in the figure) W film, an anode of 0.5-am-thick Nb/W (t a) film and a gate of 0.5-am-thick Nb film. The gate is formed by a self-aligned technique on a groove being located between the emitter and the anode. The emitter has an array of 150 rectangular tips with 3-am-wide (w) edges and 9Ltm pitch (p); p/w=3 is an optimum ratio for the comb-shaped FEA.2) Figure 2 shows a SEM micrograph of the triode fabricated. The emitter-to-anode distance D and the emitter-to-gate spacing g were D=5~tm and g=0.5am, respectively. In the measurement of the characteristics, resistors RE (=110 kn), R ~ ( = 1 0 0 kn) and R ~(=100 kn) were connected in series to the emitter, the gate and the anode, respectively. All measurements were made at pressures less than 10-6Pa. Figure 3 shows an example of triode characteristics. As shown, the anode current IA increases with the anode voltage. The transconductance estimated roughly from this result is about 0.8~s at V G=11ov and vA=15ov. to the emission current, IA/IE, is very small and is about 25% at vA=15ov as shown in Fig.4; 75% of the emitter current enters the gate electrode. This poor current fraction is undesirable for triode operation and is caused by the asymmetric gate configuration. We believe, however, the fraction can be effectively increased by reducing further the emitter-to-anode spacing D down to l-2ctm. For further improvement of the performance, the emitter current and the anode-current fraction should be increased by reducing the device dimensions, especially the emitter-to-anode spacThe fraction of the anode current


Archive | 1998

Field emission element

Shigeo Itoh; Teruo Watanabe; Makoto Miyamori; Norio Nishimura; Junji Itoh; Seigo Kanemaru


Archive | 1994

Field emission element and process for manufacturing same

Shigeo Itoh; Teruo Watanabe; Hisashi Nakata; Norio Nishimura; Junji Itoh; Seigo Kanemaru


Archive | 1996

Field emitter having source, channel, and drain layers

Seigo Kanemaru; Junji Itoh


Archive | 1993

ELEMENT D'EMISSION DE CHAMP.

Shigeo Itoh; Makoto Miyamori; Junji Itoh; Teruo Watanabe; Norio Nishimura; Seigo Kanemaru


Archive | 1998

Cold electron emission device

Junji Itoh; Seigo Kanemaru


Archive | 1992

ELEMENT A EMISSION DE CHAMP ET SON PROCEDE DE FABRICATION.

Shigeo Itoh; Teruo Watanabe; Hisashi Nakata; Norio Nishimura; Junji Itoh; Seigo Kanemaru


Archive | 1999

Field emission cathode manufacture, particularly used as an electron gun for a display unit, image acquisition unit, high frequency device

Shigeo Itoh; Junji Itoh; Seigo Kanemaru


Archive | 1996

Feldemissionsvorrichtung Field emission device

Seigo Kanemaru; Junji Itoh


Archive | 1991

A field emission element and process for its preparation

Shigeo Itoh; Teruo Watanabe; Hisashi Nakata; Norio Nishimura; Junji Itoh; Seigo Kanemaru

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Seigo Kanemaru

National Institute of Advanced Industrial Science and Technology

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