Junseok Heo

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

Hysteresis, which is induced by both extrinsic and intrinsic causes, is often observed in molybdenum disulphide (MoS2) field-effect transistors (FETs), and several extrinsic hysteresis effects have been reported in unpassivated bottom-gate MoS2 device structures. In this study, interface-trap-induced hysteresis and other electrical properties are examined. We experimentally investigate thermally activated trap charges near a silicon-dioxide (SiO2)-MoS2 interface that gives rise to hysteresis in a multilayer MoS2 FET in a temperature region of 10–300u2009K. The threshold voltage (VTH) and field-effect mobility (μFE) decrease with the increase in temperature, regardless of the gate-bias sweep direction. The hysteresis that coincides with the trend of subthreshold swing increases sharply above Tu2009=u2009150u2009K as the released charges from interface traps become dominant over the fixed charges. Based on a temperature-dependent hysteresis analysis, we discussed the activation energy of interface traps and maximum interfa...

InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.

GaN nanowires and InGaN disk heterostructures are grown on an amorphous SiO2 layer by a plasma-assisted molecular beam epitaxy. Structural studies using scanning electron microscopy and high-resolution transmission electron microscopy reveal that the nanowires grow vertically without any extended defect similarly to nanowires grown on Si. The as-grown nanowires have an intermediate region consisting of Ga, O, and Si rather than SiNx at the interface between the nanowires and SiO2. The measured photoluminescence shows a variation of peak wavelengths ranging from 580 nm to 635 nm because of non-uniform indium incorporation. The nanowires grown on SiO2 are successfully transferred to a flexible polyimide sheet by Au-welding and epitaxial lift-off processes. The light-emitting diodes fabricated with the transferred nanowires are characterized by a turn-on voltage of approximately 4 V. The smaller turn-on voltage in contrast to those of conventional nanowire light-emitting diodes is due to the absence of an intermediate layer, which is removed during an epitaxial lift-off process. The measured electroluminescence shows peak wavelengths of 610-616 nm with linewidths of 116-123 nm.

Angle- and position-insensitive electrically tunable absorption in graphene by epsilon-near-zero effect

We propose an electrically tunable absorber based on epsilon-near-zero (ENZ) effect of graphene embedded in a nanocavity, which is composed of metal grating and substrate. Due to strong surface-normal electric field confined in ENZ graphene in the proposed structure, greatly enhanced light absorption (~80%) is achieved in an ultrathin graphene monolayer. By electrically controlling the Fermi-level of graphene, a sharp peak absorption wavelength is tuned over a wide range. The proposed device can work as an optical modulator or a tunable absorption filter, which has a unique feature of incident angle insensitiveness owing to the ENZ effect and magnetic dipole resonance. Moreover, existence of a significantly dominant electric field and its uniformity make the device performance independent of the position of the graphene layer in the nanocavity, which provides great fabrication tolerance.

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters.

Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFEu2009>u200964.4u2009cm2/Vs, on/off ratiou2009>u2009106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ~495u2009nm (blue) to ~590u2009nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

1.3 μm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit

A feasible optical interconnect on a silicon complementary metal-oxide-semiconductor chip demands epitaxial growth and monolithic integration of diode lasers and optical detectors with guided wave components on a (001) Si wafer, with all the components preferably operating in the wavelength range of 1.3–1.55 <inline-formula> <tex-math notation=LaTeX>

Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer

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High-frequency optoacoustic transmitter based on nanostructured germanium via metal-assisted chemical etching

</tex-math></inline-formula> at room temperature. It is also desirable for the fabrication technique to be relatively simple and reproducible. Techniques demonstrated in the past for having optically and electrically pumped GaAs- and InP-based lasers on silicon include wafer bonding, selective area epitaxy, epitaxy on tilted substrates, and use of quantum dot or planar buffer layers. Here, we present a novel monolithic optical interconnect on a (001) Si substrate consisting of a III-nitride dot-in-nanowire array edge emitting diode laser and guided wave photodiode, with a planar SiO₂/Si₃N₄ dielectric waveguide in between. The active devices are realized with the same nanowire heterostructure by one-step epitaxy. The electronic properties of the InN dot-like nanostructures and mode confinement and propagation in the nanowire waveguides have been modeled. The laser, emitting at the desired wavelength of <inline-formula> <tex-math notation=LaTeX>

All-Optical Ultrasound Transducer Using CNT-PDMS and Etalon Thin-Film Structure

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III-nitride nanowire array based 1.3μm monolithic photonic integrated circuit on (001) silicon substrate

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Bias-dependent photoresponsivity of multi-layer MoS 2 phototransistors

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