Justin W. Wells

Atomic Hydrogen Adsorbate Structures on Graphene

The adsorbate structures of atomic hydrogen on the basal plane of graphene on a SiC substrate is revealed by Scanning Tunneling Microscopy (STM). At low hydrogen coverage the formation of hydrogen dimer structures is observed, while at higher coverage larger disordered clusters are seen. We find that hydrogenation preferentially occurs on the protruding/high tunneling probability areas of the graphene layer modulated by the underlying 6 x 6 reconstruction of SiC. Hydrogenation offers the interesting possibility to manipulate both the electronic and chemical properties of graphene.

Exploring the limits of N-type ultra-shallow junction formation.

Low resistivity, near-surface doping in silicon represents a formidable challenge for both the microelectronics industry and future quantum electronic devices. Here we employ an ultra-high vacuum strategy to create highly abrupt doping profiles in silicon, which we characterize in situ using a four point probe scanning tunnelling microscope. Using a small molecule gaseous dopant source (PH3) which densely packs on a reconstructed silicon surface, followed by encapsulation in epitaxial silicon, we form highly conductive dopant sheets with subnanometer control of the depth profiles. This approach allows us to test the limits of ultra-shallow junction formation, with room temperature resistivities of 780 Ω/□ at an encapsulation depth of 4.3 nm, increasing to 23 kΩ/□ at an encapsulation depth of only 0.5 nm. We show that this depth-dependent resistivity can be accounted for by a combination of dopant segregation and surface scattering.

Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

We present room temperature resistivity measurements of shallow, monolayer doped phosphorus in silicon, a material system of interest for both conventional microelectronic manufacturing, and future quantum electronic devices. Using an in-situ variable spacing microscopic four-probe system, we demonstrate the ability to separate the conductivity of the substrate and the doping layer. We show that the obtained sensitivity to the dopant layer derives from a combination of the nanoscale contacting areas and the conductivity difference between the highly doped 2D layer and the substrate. At an encapsulation depth of only 4 nm, we demonstrate a room temperature resistivity of 1.4 kΩ/◻.

Spin-valley locking in the normal state of a transition-metal dichalcogenide superconductor

Metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing from a charge-density wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based and heavy-fermion systems, yet even for the more moderately-correlated TMDCs, their nature and origins have proved controversial. Here, we study a prototypical example, 2H-NbSe2, by spin- and angle-resolved photoemission and first-principles theory. We find that the normal state, from which its hallmark collective phases emerge, is characterized by quasiparticles whose spin is locked to their valley pseudospin. This results from a combination of strong spin–orbit interactions and local inversion symmetry breaking, while interlayer coupling further drives a rich three-dimensional momentum dependence of the underlying Fermi-surface spin texture. These findings necessitate a re-investigation of the nature of charge order and superconducting pairing in NbSe2 and related TMDCs.

Surface-sensitive conductivity measurement using a micro multi-point probe approach.

An instrument for microscale electrical transport measurements in ultra-high vacuum is presented. The setup is constructed around collinear lithographically-created multi-point probes with a contact spacing down to 500 nm. Most commonly, twelve-point probes are used. These probes are approached to the surface via piezoelectric positioners. Standard four-point resistance measurements can be performed using any combination of contacts out of the twelve available. Current/voltage measurements are taken semi-automatically for a variety of the possible contact configurations, effectively emulating measurements with an equidistant four-point probe for a wide range of contact spacings. In this way, it is possible to distinguish between bulk-like and surface-like conduction. The paper describes the design of the instrument and the approach to data and error analysis. Application examples are given for epitaxial graphene on SiC and degenerately doped Bi₂Se₃.

Direct measurement of the band structure of a buried two-dimensional electron gas.

Buried two dimensional electron gasses (2DEGs) have recently attracted considerable attention as a testing ground for both fundamental physics and quantum computation applications. Such 2DEGs can be created by phosphorus delta (\delta) doping of silicon, a technique in which a dense and narrow dopant profile is buried beneath the Si surface. Phosphorous \delta-doping is a particularly attractive platform for fabricating scalable spin quantum bit architectures, compatible with current semiconductor technology. The band structure of the \delta-layers that underpin these devices has been studied intensely using different theoretical methods, but it has hitherto not been possible to directly compare these predictions with experimental data. Here we report the first measurement of the electronic band structure of a \delta-doped layer below the Si(001) surface by angle resolved photoemission spectroscopy (ARPES). Our measurements confirm the layer to be metallic and give direct access to the Fermi level position. Surprisingly, the direct observation of the states is possible despite them being buried far below the surface. Using this experimental approach, buried states in a wide range of other material systems, including metallic oxide interfaces, could become accessible to direct spectroscopic investigations.

Hierarchical spin-orbital polarization of a giant Rashba system

Angle-resolved photoemission reveals the emergence of complex orbital texture concomitant with spin splitting in the Rashba compound BiTeI. The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent splitting of a single initially spin-degenerate band into two branches with opposite spin polarization. Combining polarization-dependent and resonant angle-resolved photoemission measurements with density functional theory calculations, we show that the two “spin-split” branches of the model giant Rashba system BiTeI additionally develop disparate orbital textures, each of which is coupled to a distinct spin configuration. This necessitates a reinterpretation of spin splitting in Rashba-like systems and opens new possibilities for controlling spin polarization through the orbital sector.

Hole doping of graphene supported on Ir(111) by AlBr3

In this letter, we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy.

On-surface manipulation of atom substitution between cobalt phthalocyanine and the Cu(111) substrate

On-surface fabrication of controllable nanostructures is an appealing topic in the field of molecular electronics. Herein, the adsorption of cobalt phthalocyanine (CoPc) on a Cu(111) surface is investigated utilizing a combination of photoelectron spectroscopy (PES) and density functional theory (DFT). Interestingly, the scenario of atom exchange is discovered at the interface at room temperature (RT), namely the substitution of the cobalt atom in CoPc by a surface Cu adatom. Moreover, thermal annealing enhances the substitution process considerably which is demonstrated to be complete at about 573 K. As revealed by DFT calculations, the driving force for the observed interface transmetalation is most probably provided by the initial strong molecular-substrate interaction between Co atoms and the Cu(111) surface, the external thermodynamic energy gained from thermal sublimation and thermal annealing, and the tendency to form Co–Cu alloy at the interface. While CoPc has been successfully utilized in electrocatalysts for fuel cell applications and CuPc is commonly used as a leading material in organic solar cells, this report of interface transmetalation from CoPc to CuPc in a solid state environment may offer an encouraging approach towards the artificial engineering of organometallic nanostructures and related properties for surface catalysts, molecular electronics and so on.

Valley splitting in a silicon quantum device platform.

By suppressing an undesirable surface Umklapp process, it is possible to resolve the two most occupied states (1Γ and 2Γ) in a buried two-dimensional electron gas (2DEG) in silicon. The 2DEG exists because of an atomically sharp profile of phosphorus dopants which have been formed beneath the Si(001) surface (a δ-layer). The energy separation, or valley splitting, of the two most occupied bands has critical implications for the properties of δ-layer derived devices, yet until now, has not been directly measurable. Density functional theory (DFT) allows the 2DEG band structure to be calculated, but without experimental verification the size of the valley splitting has been unclear. Using a combination of direct spectroscopic measurements and DFT we show that the measured band structure is in good qualitative agreement with calculations and reveal a valley splitting of 132 ± 5 meV. We also report the effective mass and occupation of the 2DEG states and compare the dispersions and Fermi surface with DFT.