K. Ambal

Robust absolute magnetometry with organic thin-film devices

Magnetic field sensors based on organic thin-film materials have attracted considerable interest in recent years as they can be manufactured at very low cost and on flexible substrates. However, the technological relevance of such magnetoresistive sensors is limited owing to their narrow magnetic field ranges (∼30 mT) and the continuous calibration required to compensate temperature fluctuations and material degradation. Conversely, magnetic resonance (MR)-based sensors, which utilize fundamental physical relationships for extremely precise measurements of fields, are usually large and expensive. Here we demonstrate an organic magnetic resonance-based magnetometer, employing spin-dependent electronic transitions in an organic diode, which combines the low-cost thin-film fabrication and integration properties of organic electronics with the precision of a MR-based sensor. We show that the device never requires calibration, operates over large temperature and magnetic field ranges, is robust against materials degradation and allows for absolute sensitivities of <50 nT Hz−1/2.

Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators

Separating the influence of hyperfine from spin-orbit interactions in spin-dependent carrier recombination and dissociation processes necessitates magnetic resonance spectroscopy over a wide range of frequencies. We have designed compact and versatile coplanar waveguide resonators for continuous-wave electrically detected magnetic resonance and tested these on organic light-emitting diodes. By exploiting both the fundamental and higher-harmonic modes of the resonators, we cover almost five octaves in resonance frequency within a single setup. The measurements with a common π-conjugated polymer as the active material reveal small but non-negligible effects of spin-orbit interactions, which give rise to a broadening of the magnetic resonance spectrum with increasing frequency.

Spin-Relaxation Dynamics of E′ Centers at High Density in SiO2 Thin Films for Single-Spin Tunneling Force Microscopy

Methods for the creation of thin amorphous silicon dioxide (aSiO2) layers on crystalline silicon substrates with very high densities of silicon dangling bonds (so called E’ centers) have been explored and volume densities of [E’]> 5 × 1018cm−3 throughout a 60nm thick film have been demonstrated by exposure of a thermal oxide layer to a low pressure Argon radio frequency plasma. While the generated high E’ center densities can be annealed completely at 300C, they are comparatively stable at room temperature with a half life of about one month. Spin relaxation time measurements of these states between T = 5K and T = 70K show that the phase relaxation time T2 does not strongly depend on temperature and compared to SiO2 films of lower E’ density, is significantly shortened. The longitudinal relaxation time T1 ≈ 195(5)μs at room temperature is in agreement with low–density SiO2. In contrast, T1 ≈ 625(51)μs at T = 5K is much shorter than in films of lower E’ density. These results are discussed in the context of E’ centers being used as probe spins for spin–selection rules based single spin–readout.

Electrical current through individual pairs of phosphorus donor atoms and silicon dangling bonds.

Nuclear spins of phosphorus [P] donor atoms in crystalline silicon are among the most coherent qubits found in nature. For their utilization in scalable quantum computers, distinct donor electron wavefunctions must be controlled and probed through electrical coupling by application of either highly localized electric fields or spin-selective currents. Due to the strong modulation of the P-donor wavefunction by the silicon lattice, such electrical coupling requires atomic spatial accuracy. Here, the spatially controlled application of electrical current through individual pairs of phosphorus donor electron states in crystalline silicon and silicon dangling bond states at the crystalline silicon (100) surface is demonstrated using a high‐resolution scanning probe microscope operated under ultra‐high vacuum and at a temperature of 4.3K. The observed pairs of electron states display qualitatively reproducible current-voltage characteristics with a monotonous increase and intermediate current plateaus.

Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

A comprehensive study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured AFM system noise. The results show that the approach could provide single spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

In situ absolute magnetometry in an UHV scanning probe microscope using conducting polymer-thin film

The in situ measurement and control of the direction and magnitude of the magnetic field is demonstrated within the sample plane of a low-temperature ultra-high vacuum scanning probe microscope. These measurements utilized electrically detected magnetic resonance magnetometry based on the spin-dependent recombination current in a conducting polymer-thin film. The presented magnetometry approach allows the absolute measurement of systematic magnetic offset fields with a resolution on the order of ≈5μT/Hz with an angular resolution below ≈1°. As the polymer film covers a macroscopic area within the sample plane, magnetometry becomes possible at various locations within the sample plane and thus the determination of magnetic field gradients.