K. Arndt

Silicon sensors development for the CMS pixel system

The CMS experiment will operate at the Large Hadron Collider (LHC). A hybrid pixel detector located close to the interaction region of the colliding beams will provide high resolution tracking and vertex identification which will be crucial for b quark identification. Because of the radiation environment of the LHC, the performance of the sensors must be carefully evaluated up to a fluence of 6 � 10 14 neq cm � 2 . We expect that the sensors will be operated partially depleted during their operation at the LHC and we have implemented an n + on n sensor design. We have irradiated prototype sensors to a dose of 1 � 10 15 neq cm � 2 . We present the results of our testing before and after irradiation.

Charge collection studies in irradiated HV-CMOS particle detectors

Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

Simulation and laboratory test results of 3D CMS pixel detectors for HL-LHC

The CMS pixel detector is the innermost tracking device at the LHC, reconstructing interaction vertices and charged particle trajectories. The current planar sensors located in the innermost layer of the pixel detector will be exposed to very high fluences which will degrade their performances. As a possible replacement for planar pixel sensors in the High Luminosity-LHC (HL-LHC), 3D silicon technology is under consideration due to its expected good performance in harsh radiation environments. Studies are also in progress for using 3D silicon pixel detectors in near-beam proton spectrometers at the LHC. Deep Reactive Ion Etching (DRIE) plays a key role in fabricating 3D silicon detectors in which readout and ohmic electrodes are processed through the silicon substrate instead of being implanted on the silicon surface. 3D pixel devices considered in this study were processed at FBK (Trento, Italy), bump bonded to the CMS pixel readout chip, and characterized in the laboratory. Numerical simulations were also carried out. We report on selected results from laboratory measurements and TCAD simulations.

Design, performance and status of the CLEO III silicon detector

Abstract The CLEO III silicon detector is part of a general upgrade of the CLEO detector to allow for operation at a luminosity of 2×10 33 cm −2 s −1 , which will be provided by the Cornell Electron–Positron Storage Ring (CESR) beginning in 1999. The silicon detector is a four-layer barrel design covering radii from 2.5 to 10.2 cm with 93% solid angle coverage. The silicon sensors are DC-coupled and double-sided with double-metal readout on the p-side. The n-type strips measure φ , with 50 μ m pitch while the p-type strips measure z , the coordinate along the beam axis, with 100 μ m pitch. The readout electronics are mounted on BeO hybrids attached to the conical support structure and connected to the silicon sensors via a thin kapton flex cable. The electronics consist of an R / C chip with bias resistors and decoupling capacitors, a low-noise preamp/shaper chip and a digitizer/sparsifier chip. Readout is done using VME-based sequencer boards. Production of all detector components is nearing completion and installation of the detector will take place in early 1999.

THE CLEO III SILICON TRACKER

Abstract The Cornell Electron Storage Ring is being upgraded to B-factory luminosities. The CLEO detector is also being upgraded with a new charged particle tracking system and with the addition of a ring imaging Cerenkov particle identification system. A major part of the tracking system upgrade is the construction of a new four-layer double-sided silicon tracker with 93% solid angle coverage and new readout electronics. The status of the silicon tracker including production tests and the expected performance of the final system are discussed.

Design and initial performance of the CLEO III silicon tracker

Abstract CLEO III is the new experimental phase of the CLEO experiment at the CESR accelerator. Both the accelerator and the detector have recently been upgraded. A new charged particle tracking system with the addition of a ring imaging Cherenkov particle identification system has been installed. A major part of the tracking system upgrade was the construction of a new four-layer double-sided silicon tracker with 93% solid angle coverage and new readout electronics. The CLEO III upgrade was completed in February 2000 with the installation of the silicon detector. CLEO III has finished the commissioning phase and is now taking data. The design of the detector and first performance results are presented here.

Electrical Characterization and Preliminary Beam Test Results of 3D Silicon CMS Pixel Detectors

The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been realized with advancements in MEMS technology. Since the fabrication of the first 3D prototype in Stanford Nanofabrication Facility in 1997, a significant effort has been put forth to transfer the 3D detector technology to large scale manufacturing for future high luminosity collider experiments, in which the radiation hardness will be the primary concern, and other applications such as medical imaging and X-ray imaging for molecular biology. First, alternative 3D structures, single type column (STC) and double-side double type column (DDTC) 3D detectors, were produced at FBK-irst (Trento, Italy) and CNM-Barcelona (Spain), and assessed thoroughly to improve the production technology towards the standard full-3D detectors. The 3D collaboration has been extended to include SINTEF (Norway), which is committed to small to medium scale production of active edge full-3D silicon sensors. This paper focuses on p-type 3D detectors compatible with the CMS pixel front end electronics from the second run of fabrication at SINTEF clean room facilities. The sensors that passed the wafer level electrical characterization have been bump-bonded at IZM (Germany), assembled into modules and wire-bonded for functional characterization at Purdue University. We report the leakage current characteristics, bump-bond quality, threshold, noise, and gain measurement results of these 3D modules as well as the preliminary beam test data taken at Fermi National Accelerator Laboratory.

Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with the AMS H35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

Active cooling control of the CLEO detector using a hydrocarbon coolant farm

Abstract We describe a novel approach to particle-detector cooling in which a modular farm of active coolant-control platforms provides independent and regulated heat removal from four recently upgraded subsystems of the CLEO detector: the ring-imaging Cherenkov detector, the drift chamber, the silicon vertex detector, and the beryllium beam pipe. We report on several aspects of the system: the suitability of using the aliphatic-hydrocarbon solvent PF TM -200IG as a heat-transfer fluid, the sensor elements and the mechanical design of the farm platforms, a control system that is founded upon a commercial programmable logic controller employed in industrial process-control applications, and a diagnostic system based on virtual instrumentation. We summarize the systems performance and point out the potential application of the design to future high-energy physics apparatus.

Testbeam and laboratory characterization of CMS 3D pixel sensors

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.