K. Bouzehouane

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

Ferroelectrics possess a polarization that is spontaneous, stable and electrically switchable, and submicrometre-thick ferroelectric films are currently used as non-volatile memory elements with destructive capacitive readout. Memories based on tunnel junctions with ultrathin ferroelectric barriers would enable non-destructive resistive readout. However, the achievement of room-temperature polarization stability and switching at very low thickness is challenging. Here we use piezoresponse force microscopy at room temperature to show robust ferroelectricity down to 1 nm in highly strained BaTiO3 films; we also use room-temperature conductive-tip atomic force microscopy to demonstrate resistive readout of the polarization state through its influence on the tunnel current. The resulting electroresistance effect scales exponentially with ferroelectric film thickness, reaching ∼75,000% at 3 nm. Our approach exploits the otherwise undesirable leakage current—dominated by tunnelling at these very low thicknesses—to read the polarization state without destroying it. We demonstrate scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch-2. These results pave the way towards ferroelectric memories with simplified architectures, higher densities and faster operation, and should inspire further exploration of the interplay between quantum tunnelling and ferroelectricity at the nanoscale.

Ferroelectric Control of Spin Polarization

Spin into Control Spintronics—the use of the spin direction of subatomic particles to control on and off states, instead of electric charge—has the potential to create low-power electronics, because less energy is needed to flip spin states than to flip switches to create voltage barriers. Theoretical work hints that spin-polarized electrons from a ferromagnetic electrode can be controlled by a change in polarization created in a ferroelectric thin film. Garcia et al. (p. 1106, published online 14 January) fabricated an iron-barium titanate junction on a lanthanum strontium manganate substrate that acts as a spin detector. Local control of spin polarization was observed in the ferroelectric layer, which retained its polarization without any applied power. Ferroelectric tunnel junctions control the spin polarization of electrons emitted from iron electrodes. A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

A ferroelectric memristor

Memristors are continuously tunable resistors that emulate biological synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, although the details of the mechanism remain under debate. Purely electronic memristors based on well-established physical phenomena with albeit modest resistance changes have also emerged. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth, we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.

Unravelling the role of the interface for spin injection into organic semiconductors

Organic semiconductors are attractive candidates for spintronics applications because of their long spin lifetimes. But few studies have investigated how to optimize the injection of spin into these materials. A new study suggests that the metal/organic interface is key.

High mobility in LaAlO3/SrTiO3 heterostructures: origin, dimensionality, and perspectives.

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (P(O2)<10(-5) mbar) and has a three-dimensional character. However, at higher P(O2) the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low P(O2), other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.

Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films

We have explored the influence of deposition pressure and temperature on the growth of BiFeO3 thin films by pulsed laser deposition onto (001)-oriented SrTiO3 substrates. Single-phase BiFeO3 films are obtained in a region close to 10−2mbar and 580°C. In nonoptimal conditions, x-ray diffraction reveals the presence of Fe oxides or of Bi2O3. We address the influence of these parasitic phases on the magnetic and electrical properties of the films and show that films with Fe2O3 systematically exhibit a ferromagnetic behavior, while single-phase films have a low bulklike magnetic moment. Conductive-tip atomic force microscopy mappings also indicate that Bi2O3 conductive outgrowths create shortcuts through the BiFeO3 films, thus preventing their practical use as ferroelectric elements in functional heterostructures.

Interface-induced room-temperature multiferroicity in BaTiO3

Multiferroic materials possess two or more ferroic orders but have not been exploited in devices owing to the scarcity of room-temperature examples. Those that are ferromagnetic and ferroelectric have potential applications in multi-state data storage if the ferroic orders switch independently, or in electric-field controlled spintronics if the magnetoelectric coupling is strong. Future applications could also exploit toroidal moments and optical effects that arise from the simultaneous breaking of time-reversal and space-inversion symmetries. Here, we use soft X-ray resonant magnetic scattering and piezoresponse force microscopy to reveal that, at the interface with Fe or Co, ultrathin films of the archetypal ferroelectric BaTiO₃ simultaneously possess a magnetization and a polarization that are both spontaneous and hysteretic at room temperature. Ab initio calculations of realistic interface structures provide insight into the origin of the induced moments and bring support to this new approach for creating room-temperature multiferroics.

Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmions at room temperature

Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films in which the cobalt layer is sandwiched between two heavy metals and so provides additive interfacial Dzyaloshinskii-Moriya interactions (DMIs), which reach a value close to 2 mJ m(-2) in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning X-ray transmission microscopy technique, we imaged small magnetic domains at very low fields in these multilayers. The study of their behaviour in a perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large DMI. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in the near future.Facing the ever-growing demand for data storage will most probably require a new paradigm. Magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach about 2 mJ/m in the case of the Ir|Co|Pt multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged magnetic bubble-like domains in these multilayers. The study of their behavior in magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the Dzyaloshinskii-Moriya interaction. This discovery of stable skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future. A major societal challenge is related to the continually increasing quantity of information to process and store. The hard disk drives, in which information is encoded magnetically, allow nowadays the storage of zettabytes (10) of information, but this technology should soon reach its limits. An up-and-coming avenue has been opened by the discovery of magnetic skyrmions [1], i.e. spin windings that can be localized within a diameter of a few nanometers and can move like particles [2]. These magnetic solitons, remarkably robust against defects due to the topology of their magnetic texture [3], are promising for being the ultimate magnetic bits to carry and store information. The topology of the skyrmions also appears to further underlie other important features such as their current-induced motion induced by small dc currents that is crucial for real applications but also the existence of a specific component in Hall Effect [4-6] that can be used advantageously for an electrical read-out of the information carried by nano-scale skyrmions. We proposed recently that these skyrmions could be used in future storage devices and information processing [2]. The existence of skyrmion spin configuration has been predicted theoretically about thirty years ago [1] but it was only recently that skyrmion lattices have been observed in crystals with noncentrosymmetric lattices, e.g. B20 crystallographic structure in MnSi [7-9], FeCoSi [10] or FeGe [5] crystals. In 2011, skyrmions have also been identified in single ultrathin ferromagnetic films with out-of-plane magnetization (Fe and FePd) deposited on a heavy metal substrate such as Ir(1 1 1) [11, 12]. Thin magnetic films appear to be more compatible with technological developments, though the observation of skyrmions in thin films has been limited up to now to low temperature and also needs, in some cases, the presence of a large applied magnetic field [12]. The study of these new magnetic phases associated with chiral interactions has generated a very strong interest in the community of solid state physics and magnetic systems with reduced dimensions. The magnetic skyrmions are magnetic solitons that are, in most cases, induced by chiral interactions of the Dzyaloshinskii-Moriya (DM) type, which result from spin-orbit effects in the absence of inversion symmetry. The DM Interaction (DMI) between two neighboring atomic spins S1 and S2 can be expressed as: HDMI = D12·(S1×S2) where D12 is the DM vector (Fig. 1A). In this work, we will focus on ultrathin magnetic systems in which the DMI results from the breaking of the inversion symmetry at the interface of a magnetic layer and can be large at the interface with a heavy metal having a large spin-orbit coupling [11]. In such case, the DM vector D12 is perpendicular to the r(S1)−r(S2) line (r(·) being the position vector) and gives rise to cycloidal skyrmionic configurations, which have a given chirality, also called hedgehog skyrmion (see Fig. 1B). Our main goal is to extend the already-observed generation of interfaceinduced skyrmions from single magnetic films [11, 12] to multilayers by stacking layers of magnetic metals and nonmagnetic heavy metals (e.g. Pt and Ir) so as to induce DMI at all the magnetic interfaces (Fig.1A). The advantages of such innovative multilayered systems are twofold. Firstly we anticipate that thermal stability of skyrmions can be greatly improved, simply because of the increase of their magnetic volume, as it turns out for our samples that the same magnetic texture extends vertically throughout the multilayer. Secondly, the choice of two different heavy metals A and B sandwiching each magnetic layer potentially allows tuning the amplitude of interfacial chiral interaction, notably to increase it drastically if the two heavy materials induce interfacial chiral interactions of opposite symmetries and parallel D when they are on opposite sides of the magnetic layer. As we will see, our multilayers present bubble-like local configurations characterized by a reversed magnetization in the center [15]. The first important conclusion that can be draught is that the presence of these bubble-like configurations cannot be accounted for by dipolar interaction but only by the large DMI of our asymmetric multilayered systems. We will then show that the size of the bubble-like configurations and its field dependence is consistent with micromagnetic simulations of skyrmionic states induced by large DMI. This stabilization in multilayered films and at room temperature of individual magnetic skyrmions induced by chiral interactions represents the most important result of this work. Given the important features of magnetic skyrmions associated to their topological nature compared to other magnetic configurations (size, easier current-induced propagation, smaller sensitivity to defects, ...), these advances represent a definite breakthrough in the research on single skyrmion towards the potential development of skyrmion-based devices. Multilayers with additive chiral interaction at interfaces with heavy metal layers The prototype of the multilayered systems in which we aim to investigate the magnetic configuration is presented in Fig. 1A. The samples grown by sputtering deposition are stacks of 10 Ir|Co|Pt trilayers, each trilayer being composed of a 0.6 nm thick Co layer sandwiched between 1 nm of Ir and 1 nm of Pt: Pt10|Co0.6|Pt1|{Ir1|Co0.6|Pt1}10|Pt3. The choice of the two heavy materials i.e. Pt and Ir, has been guided by recent experiments of asymmetric domain wall propagation [16, 17] and recent ab initio predictions of opposite DMI for Co on Ir and Co on Pt [18], which corresponds to additive DMI at the two interfaces of the Co layers sandwiched between Ir and Pt. In addition to these Ir|Co|Pt asymmetric multilayers, we also prepared reference samples of Pt|Co|Pt with symmetric interfaces, in which one can expect a cancellation, at least partial, of the interfacial DMI [19]. Details about the growth conditions and the characterization of their magnetic properties are presented in the supplementary materials [14]. From SQUID measurements on our multilayers, we deduce a magnetization at saturation of 0.96 ± 0.10 MA/m (1.6 ± 0.2 MA/m) and an effective anisotropy of 0.17 ± 0.04 MJ/m (0.25 ± 0.07 MJ/m) for the Ir|Co|Pt (Pt|Co|Pt) system. These magnetic parameters have been used for micromagnetic simulations of their magnetic configuration [20, 21]. We present here simulations for the case of Co layers completely decoupled. The case taking into account the proximity-induced moment [22, 23] in Pt and Ir is detailed in the supplementary materials and lead to even larger estimation of the DMI amplitude [14]. Fig. 1. Interfacial Dzyaloshinskii-Moriya interaction (DMI) in asymmetric magnetic multilayers. (A) The DMI for two magnetic atoms close to an atom with large spin-orbit coupling in the Fert-Levy picture [13]. Zoom on a single trilayer composed of a magnetic layer (gray) sandwiched between two different heavy metals A (blue) and B (green) that induce the same chirality (same orientation of D) when A is below and B above the magnetic layer, and finally on an asymmetric multilayer made of several repetition of the trilayer. (B) Sketch of an isolated hedgehog skyrmion stabilized by interfacial chiral interaction in a magnetic thin film. (C-F) 800×800 nm out-of-plane magnetization (mz) map obtained by Scanning Transmission X-ray Microscopy (STXM) on a {Ir|Co|Pt}10 multilayer at room temperature for applied out-of-plane magnetic fields of 8 (C), 38 (D), 73 (E) and 83 mT (F). (G) Experimental dichroic signal through a magnetic circular domain (skyrmion) as observed at 22 mT (black dots). The corresponding STXM 360×360 nm image is in inset. The blue dashed curve is the magnetization profile of an ideal 30 nm-radius skyrmion and the red curve derives from the model described in the text. (H) Same type of data at 58 mT and corresponding simulation of 20 nm-radius skyrmion. The dichroic signal is not reversed due to the limited resolution of the STXM [14]. Magnetization mapping in asymetric multilayers: Bubbles or skyrmions? In order to map the distribution of the vertical component of the magnetization in our Ir|Co|Pt multilayers and to follow its evolution as a function of the external perpendicular field, we have performed Scanning Transmission X-ray Microscopy (STXM) experiments on samples grown on Si3N4 membranes by measuring the dichroic signal at Co L3-edge [14]. In Fig. 1C-F, we display a series of images obtained at different perpendicular field values. After saturation at large negative field, we observe a domain configuration (Fig. 1C) at low positive field that combines some worm-shape domains together with other domains having almost a circular shape. Note that the magnetic contrast that we detect by STXM is an averaged value of the magnetic configuration throughout the entire multilayer. When the field is increased to μ0H⊥ = 38 mT, the magnetic domains favored by the field extend (Fig. 1D). Before re

Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films.

We have combined neutron scattering and piezoresponse force microscopy to show that the exchange field in CoFeB/BiFeO_{3} heterostructures scales with the inverse of the ferroelectric and antiferromagnetic domain size of the BiFeO3 films, as expected from Malozemoffs model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with CoFeB. In view of these results, we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3.

Phase-locking of magnetic vortices mediated by antivortices

Synchronized spin-valve oscillators may lead to nanosized microwave generators that do not require discrete elements such as capacitors or inductors. Uniformly magnetized oscillators have been synchronized, but offer low power. Gyrating magnetic vortices offer greater power, but vortex synchronization has yet to be demonstrated. Here we find that vortices can interact with each other through the mediation of antivortices, leading to synchronization when they are closely spaced. The synchronization does not require a magnetic field, making the system attractive for electronic device integration. Also, because each vortex is a topological soliton, this work presents a model experimental system for the study of interacting solitons.