K. I. Kirov

Deposition of A1N thin films by magnetron reactive sputtering

Abstract A1N films were deposited onto silicon substrates in d.c. planar magnetron system by means of reactive sputtering of aluminium in an atmosphere of nitrogen. The influence of the deposition conditions and of post-deposition annealing on the properties of the insulator and the A1NSi interface were investigated.

Defects in Si/SiO2 structures introduced by sputter metallization

Abstract A comparative study of MOS structures metallized in planar and cylindrical magnetron systems and in a conventional d.c. diode sputtering system was conducted. In all cases the influence of the discharge led to distortion and hysteresis in high frequency C-V curves owing to the generation of neutral traps spatially distributed in the oxide. The effective concentration of the traps was about 1.4 × 1012 eV−1cm−2 in the central part of the band gap. These defects can easily be removed by conventional low temperature annealing. The necessity of post-metallization annealing of MOS structures prepared in magnetron systems can be avoided if the substrates are isolated from ground and heated to 300 °C during the sputter deposition of the metal layer.