K. Kajiwara

Millisecond microwave annealing: Driving microelectronics nano

The efficient deposition of high frequency microwave energy into the top several microns of a semiconducting material was experimentally demonstrated as a highly effective mechanism for rapid thermal annealing. Simulations show that absorbed power densities of 4 and 32kW∕cm2 produce average Si heating rates of 325 000 and 10000000°C∕s up to 1300°C. Conduction of thermal energy from the absorption region into the bulk substrate yields peak cooling rates that exceed 1000000°C∕s after the microwave pulse subsides. At the peak temperature, thermal gradients of 5 and 20°C∕μm exist for the aforementioned power densities of 4 and 32kW∕cm2. The application of a 4.5ms, 6kW∕cm2 pulse of 110GHz radiation resulted in an experimentally measured Si heating rate of 275000°C∕s. Applying this millisecond microwave anneal technology to ultrarapid annealing for shallow implanted dopants resulted in ultrashallow junctions that were 14–16nm deep with sheet resistances between 500 and 700Ω∕square and an estimated active dopant...

The Use of DIII-D as a Testbed for ITER ECH Transmission Line Components

The operational experience of present day high power EC systems is nominally only for a few seconds. This is a long way away from the thousands of seconds required for ITER. It would be beneficial to the ITER program that EC system components be tested to full parameters prior to committing to producing the full set of components. The planned growth in the EC system on DIII-D over the next few years provides the opportunity to assemble a test stand for ITER EC components. By building the DIII-D hardware to the ITER specifications it will allow ITER to gain beneficial prototyping experience on a working tokamak, prior to committing to building the hardware for delivery to ITER.

Launcher performance and thermal capability of the DIII-D ECH system

The temperatures of components of DIII-D ECH launchers were observed during 2003 tokamak operation. The injected power was typically 500-700 kW and the pulse length was typically 2 s. Plasma shots were performed at intervals of about 17 min from 9 a.m. to 5 p.m. The temperatures of a movable mirror, a fixed mirror and a launcher reached an equilibrium after about six hours of repetitive pulsing. The saturation temperature depends to some extent on the plasma stored energy. However, even in high /spl beta/ plasma, the temperatures plateaued at acceptable values.

Performance of the ECH Transmission Lines and Launchers in DIII‐D

The efficiency of the transmission line for the 110 GHz ECH system was measured in DIII‐D using a low power rf source. The measured efficiency was about 10% lower than expected from theoretical analysis of the components. The launcher temperature increase during rf pulses was measured and the peak mirror surface temperature was inferred from a simulation.