K. Konishi

Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion at the InP/TlInGaAs heterointerface was confirmed. The photoluminescence (PL) intensity for the DH was approximately ten times stronger than that of the single heterostructure. The PL peak energy and its variation with temperature for the TlInGaAs/InP DH decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K).

Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates

New alloy semiconductor TlInGaAsN/AlGaAs heterostructures for fabricating 1.3–1.55 µm wavelength laser diodes with temperature-stable threshold current and temperature-stable lasing wavelength are proposed. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH)-, multi-hetero (MD)- and single-quantum-well (SQW) structures were grown on GaAs substrates by gas source molecular beam epitaxy. Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high-energy electron diffraction intensity oscillation. Red shift of the photoluminescence peak energy was also observed for TlInGaAs/GaAs DH, MH and SQW samples, which agrees with the incorporation of Tl.

Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy

TlInGaAs/InP double heterostructure light-emitting diodes were grown on (100) InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated at up to 340°C with a wavelength around 1.58 µm. Very small temperature dependence of the electroluminescence peak energy (-0.09 meV/K) was observed, which is similar to the temperature dependence of the photoluminescence peak energy.

Temperature stable wavelength TlInGaAs/InP DH LEDs grown by gas source MBE

TlInGaAs/InP double heterostructure (DH) light emitting diodes (LEDs) were grown on [100] InP substrates by gas source molecular beam epitaxy. The Tl composition was 6%. They were operated up to 340 K in the wavelength range of 1.58 /spl mu/m. Very small temperature variation in the electroluminescence (EL) peak energy (-0.09 meV/K) was observed, similar to the temperature variation of photoluminescence (PL) peak energy.

Gas source MBE growth of TlInGaAs layers on GaAs substrates

New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 /spl mu/m wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl.

Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application

Abstract : TlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (-0.09 meV/K) was observed at the wavelength around 1.58 micrometers. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.

TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.