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Dive into the research topics where K. Morii is active.

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Featured researches published by K. Morii.


Journal of Applied Physics | 2005

Enhancement of ferromagnetic ordering in dielectric BaFe1−xZrxO3−δ (x=0.5–0.8) single-crystal films by pulsed laser-beam deposition

T. Matsui; E. Taketani; Norifumi Fujimura; Hiroshi Tsuda; K. Morii

The effect of Zr substitution on the magnetic and dielectric properties of the BaFe1−xZrxO3−δ epitaxial grown films was investigated. The Zr substitution significantly improved the dielectric properties of the films. In addition to this, the saturation magnetization for the x=0.7 sample was determined to be 0.98μB∕Fen+, in contrast to 0.09μB∕Fen+ for the x=0.5 sample. This implies that the magnetic ordering for the x=0.7 sample has been greatly enhanced, possibly due to the ferromagnetic spin alignment of Fe ions. We will discuss the magnetization behavior in conjunction with the valence state of the Fe ions in the samples.


Journal of Alloys and Compounds | 1996

Formation of the (001) textured Mn5Ge3 phase by solid state reaction of thin multilayered films

T. Matsui; T. Fukushima; M. Shigematsu; Hiroshi Mabuchi; K. Morii

Abstract Solid state phase formation by thermal annealing in ion beam sputtered Mn/Ge multilayered films was investigated, as a function of the discharging power of the ion source during sputtering and as a function of the annealing conditions. Films of preferentially (001) oriented Mn5Ge3 were produced upon annealing at 973 K of the multilayered films, expected to be composed of the Mn11Ge8 phase with a preferential (010) orientation developed in the as-sputtered state. It has been shown that the former preferential orientation is induced by the latter. Such inherited orientation relationship has been ascribed to the similarity in the atomic arrangement, within particular crystal planes, between Mn5Ge3 and Mn11Ge8. Phase formation has been discussed in terms of interdiffusion of the layers and in terms of the modified effective heat of formation rule.


Journal of Physics D | 2007

Origin of the leakage current in Zr-substituted magneto-dielectric BaFeO3−δ single-crystal films on (0 0 1) SrTiO3 substrates

T. Matsui; E. Taketani; R Sato; K. Morii

Epitaxially-grown BFZO thin films with various amounts of Zr content were successfully fabricated on (0 0 1) Nb doped-SrTiO3 substrates using the pulsed laser-beam deposition technique. The Zr substitution caused a substantial decrease in the leakage current density of the films. According to the analysis of the origin of the leakage current behaviour, the samples with x values smaller than 0.7 were found to show Poole–Frenkel (PF) type leakage properties at high electric fields, and the samples with larger x values exhibited Schottky-type behaviour. Regarding the x = 0.7 sample, it was considered that the currents of the PF- and Schottky-type behaviours determined the leakage properties of the samples, resulting in an intermediate state. The observed mechanism change is discussed in conjunction with the electronic band structure change, which may be caused by the increase in the relative amount of Zr ions, as well as by the change in the valence state of the Fe ions associated with Zr substitution.


Materials Science Forum | 2006

Martensitic Transformation and Mechanical Behavior of TiNi Shape Memory Alloys after Severe Plastic Deformation

Koichi Tsuchiya; M. Inuzuka; Akihide Hosokawa; Dacian Tomus; Hiroyuki Nakayama; K. Morii; Yoshikazu Todaka; Minoru Umemoto

Thermal- and stress-induced martensitic transformation was investigated on TiNi shape memory alloys subjected to severe plastic deformation (SPD) by cold rolling. TEM observation revelaed the sample is a mixture of nanocrystalline and amorphous after 40% cold rolling. DSC analysis suggested that the martensitic transformation was suppressed when the thickness reduction was over 25% reduction. Aging at lower temperatures (573 ~ 673 K, 3.6 ks) restores the phase transformations, but to a limited extent. The stress-strain curves of nanocrystalline/amorphous TiNi are characterized by absence of stress-plateau and small hysteresis.


Materials Science Forum | 2004

Surface Amorphization in Intermetallic Compounds by Shot Peening

Hiroyuki Nakayama; Koichi Tsuchiya; Yoshikazu Todaka; Minoru Umemoto; K. Morii; Takamitsu Shimizu

Surface amorphization by shot peening in intermetallic compounds was examined. The formation of amorphous layer has been verified in Ti-Ni and Zr-Co-Ni alloys. In Ti-Ni alloy, an amorphous phase and nanocrystalline grains were detected by TEM for 120 s peening duration. However, recrystallization and grain growth occurred, when peening duration was up to 400 s. In Zr-Co-Ni alloy, an amorphous phase coexisting with nanocrystalline grains was observed in Zr-37Co-13Ni alloy. For other alloy compositions (Zr-50Co and Zr-50Ni), an amorphous phase was not observed, and nanocrystalline grains were observed. All the observed nanocrystalline grains may be recrystallized from amorphous phase, because their shape was spherical.


Archive | 2003

Titanium alloy with improved rigidity and strength

K. Morii; Michiharu Ogawa; Takao Okochi; Akihiro Suzuki; 敬雄 大河内; 道治 小川; 浩一 森井; 昭弘 鈴木


Materials Transactions | 2001

Process of Nanocrystallization and Partial Amorphization by Cold Rolling in TiNi.

Hiroyuki Nakayama; Koichi Tsuchiya; Z. G. Liu; Minoru Umemoto; K. Morii; Takayoshi Shimizu


Archive | 2001

Mg-Si BASED THERMOELECTRIC MATERIAL AND PRODUCTION METHOD THEREFOR

K. Morii; Takasumi Shimizu; Minoru Umemoto; 実 梅本; 浩一 森井; 孝純 清水


Journal of Alloys and Compounds | 2005

Structure and properties of Ba8Ga16Ge30 clathrates by a novel synthesis method using CO gas reductive atmosphere

T. Matsui; J. Furukawa; K. Tsukamoto; Hiroshi Tsuda; K. Morii


Materials Science Forum | 2002

Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization

Makoto Masuda; Hiroshi Mabuchi; Hiroshi Tsuda; T. Matsui; K. Morii

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Minoru Umemoto

Toyohashi University of Technology

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T. Matsui

Osaka Prefecture University

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Hiroshi Tsuda

Osaka Prefecture University

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Koichi Tsuchiya

Toyohashi University of Technology

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Yoshikazu Todaka

Toyohashi University of Technology

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Takayoshi Shimizu

Kyoto Institute of Technology

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E. Taketani

Osaka Prefecture University

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Hiroshi Mabuchi

Osaka Prefecture University

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Norifumi Fujimura

Osaka Prefecture University

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