K. Olejník

Electrical switching of an antiferromagnet

Manipulating a stubborn magnet Spintronics is an alternative to conventional electronics, based on using the electrons spin rather than its charge. Spintronic devices, such as magnetic memory, have traditionally used ferromagnetic materials to encode the 1s and 0s of the binary code. A weakness of this approach—that strong magnetic fields can erase the encoded information—could be avoided by using antiferromagnets instead of ferromagnets. But manipulating the magnetic ordering of antiferromagnets is tricky. Now, Wadley et al. have found a way (see the Perspective by Marrows). Running currents along specific directions in the thin films of the antiferromagnetic compound CuMnAs reoriented the magnetic domains in the material. Science, this issue p. 587; see also p. 558 Transport and optical measurements are used to demonstrate the switching of domains in the antiferromagnetic compound CuMnAs. [Also see Perspective by Marrows] Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.

Spin Hall effect devices

The spin Hall effect is a relativistic spin-orbit coupling phenomenon that can be used to electrically generate or detect spin currents in non-magnetic systems. Here we review the experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of the spin Hall devices have had in the demonstration of spintronic functionalities and physical phenomena. We have attempted to organize the experiments in a chronological order, while simultaneously dividing the Review into sections on semiconductor or metal spin Hall devices, and on optical or electrical spin Hall experiments. The spin Hall device studies are placed in a broader context of the field of spin injection, manipulation, and detection in non-magnetic conductors.

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As.

We observe a singularity in the temperature derivative drho/dT of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with Tcs ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the drho/dT singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of drho/dT on the paramagnetic side points to the important role of short-range correlated spin fluctuations.

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Our x-ray photoemission, magnetization, and transport studies on surface-etched and annealed (Ga,Mn)As epilayers elucidate the key role of the surface oxide in controlling the outdiffusion of self-compensating interstitial Mn impurities. We achieved a dramatic reduction in annealing times necessary to optimize the epilayers after growth and synthesized (Ga,Mn)As films with the Curie temperature reaching 180 K. A

Experimental observation of the optical spin transfer torque

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Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

junction transistor is introduced, allowing for a large hole depletion in (Ga,Mn)As thin films at a few volts. The surface oxide etching procedure is applied to controllably reduce the thickness of the (Ga,Mn)As layer in the transistor and we observe a further strong enhancement of the field-effect on the channel resistance. The utility of our all-semiconductor ferromagnetic field-effect transistor in spintronic research is demonstrated on the measured large field effect on the anisotropic magnetoresistance.

Anisotropic Magnetoresistance Components in (Ga,Mn)As

Spin transfer torque—the transfer of angular momentum from a spin-polarized current to a ferromagnet’s magnetization—has already found commercial application in memory devices, but the underlying physics is still not fully understood. Researchers now demonstrate the crucial role played by the polarization of the laser light that generates the current; a subtle effect only evident when isolated from other influences such as heating.

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.

Magnetocrystalline anisotropies in (Ga,Mn)As: Systematic theoretical study and comparison with experiment

We explore the basic physical origins of the noncrystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. The sign of the noncrystalline AMR is found to be determined by the form of spin-orbit coupling in the host band and by the relative strengths of the nonmagnetic and magnetic contributions to the Mn impurity potential. We develop experimental methods yielding directly the noncrystalline and crystalline AMR components which are then analyzed independently. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. Generic implications of our findings for other dilute moment systems are discussed.

Light-induced magnetization precession in GaMnAs

(Ga,Mn)As is at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. However, the electronic structure of this model spintronics material has been debated and the systematic and reproducible control of the basic micromagnetic parameters and semiconducting doping trends has not been established. Here we show that seemingly small departures from the individually optimized synthesis protocols yield non-systematic doping trends, extrinsic charge and moment compensation, and inhomogeneities that conceal intrinsic properties of (Ga,Mn)As. On the other hand, we demonstrate reproducible, well controlled and microscopically understood semiconducting doping trends and micromagnetic parameters in our series of carefully optimized epilayers. Hand-in-hand with the optimization of the material synthesis, we have developed experimental capabilities based on the magneto-optical pump-and-probe method that allowed us to simultaneously determine the magnetic anisotropy, Gilbert damping and spin stiffness constants from one consistent set of measured data.