K. Sawada

Quantifying modal shapes in smart piezoelectric ultrasonic transducer array: Modeling and experiment

In this paper, a novel technique has been developed to quantify modal shapes in piezoelecric functional thin films-based micromachined ultrasonic transducers (pMUTs) for ultrasonic diagnostics. To obtain high sensitivity, an array of smart pMUTs is designed and successfully fabricated with epitaxially grown functional eutectic Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Si(111)/γ - Al2O3(111)/SrRuO3(111) substrates. Incorporating crystalline γ- Al2O3 insulator on Si substrates permitted to control smartly the orientation of piezoelectric film. The characterization is performed employing advanced 3D finite element modeling taking crystallographic anisotropy into account. Modal shapes were captured experimentally using Laser Doppler Vibratometry (LDV). In this pioneering work, an excellent correlation is realized between different resonance frequencies and mode shapes corresponding to different energy states obtained in computations and experiments. Quantification of eigenfrequencies with mode shapes has shown significant influence on transmit-receive characteristics of pMUTs. Utilizing the correlation results, ultrasonic wave transmitting experiment was successfully carried out using fabricated pMUTs as a transmitter and a commercial PZT hydrophone as a receiver.

Pyroelectric IR sensor array using lead-free pyroelectric NBT thin film on epitaxial γ-Al 2 O 3 /si(100) substrates

In this work, we fabricated lead-free pyroelectric infrared(IR) sensor array on epitaxial γ-Al<inf>2</inf>O<inf>3</inf>/Si(100) substrates with signal processing circuit using pyroelectric (Na<inf>0.5</inf>Bi<inf>0.5</inf>)TiO<inf>3</inf>(NBT) thin film deposited by chemical solution deposition (CSD), and we also investigated feasibility of NBT thin film in Si processes.

Erratum to: Aspects of Integrating Functional Electroceramic Material in Multilayer Thin Films for Image Sensing: Modeling and Experiment

1.—Glass and Ceramic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh. 2.—Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan. 3.—Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi 441-8580, Japan. 4.—e-mail: mmatin@gce.buet.ac.bd. 5.—e-mail: matin.md.a@gmail.com

Dynamic analysis of structure of a piezoelectric MEMS micro-mirror actuator: Effects of chip anisotropy and residual stress

This paper presents the dynamic behavior of a piezoelectric MEMS actuator using finite element simulations taking anisotropic properties of silicon chip and technologically induced stress into account. Silicon anisotropy has shown to shift eigenfrequencies particularly in higher eigenmodes compared to that of isotropic case. Technologically induced stress has resulted in substantial influence on both eigenfrequencies and eigenmodes. Eigenmodes were found to be significantly changed and shifted with such a stress state. Dynamic harmonic analysis exhibited a significant maximum vertical deflection of ~28 µm attainable with the actuator when excited at a resonant frequency of 112,600 Hz under 2D scanning mode.

Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

Integrated 32 × 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented Pb(Zr0.4, Ti0.6)O3 (PZT) thin films on epitaxial y-Al2O3/Si substrates has been fabricated on the one chip. The sensor array utilizes a sol-gel deposited PZT(001) thin film as a pyroelectric material, an n-JFET as a low noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure on epitaxial Pt(001)/y-Al2O3(001)/Si(001) substrates.