K. W. Cheng

X-ray diffraction and Raman scattering studies on large-area array and nanobranched structure of 1D MoO2 nanorods

One-dimensional (1D) MoO2 nanorods in the form of a large-area array and nanobranched structure were prepared by hot-filament metal?oxide vapour deposition at low and high pressures in atmospheric argon flows respectively. The x-ray diffraction (XRD) patterns of both as-synthesized samples show that the 1D MoO2 nanorods are monoclinic crystals in space group P 21/c. The Raman spectrum of the large-area array of 1D MoO2 nanorods appears to be the same as that of a two-dimensional (2D) MoO2 thin film. The Raman spectrum of the nanobranched structure of 1D MoO2 nanorods showed a downshift and asymmetric broadening of the Raman first-order TO peak when compared with the bulk (q = 0) mode. The Raman shift and broadening were attributed to phonon confinement effect in the 1D nanorods. The in?situ Raman spectra of laser-induced oxidation of the nanobranched structure of 1D MoO2 nanorods demonstrate that they can be oxidized easily and more strongly than the 3D bulk MoO2 powder.

Magnetic interaction in nanometer line width elliptical ring arrays

Magnetic interactions between permalloy elliptical rings in different arrangements of two-dimensional arrays were investigated. The edge-to-edge distances between units along the long axis were changed from 2μm down to 100nm. Formation of domain walls during magnetization reversals results in magnetostatic coupling between adjacent units. When two neighboring rows were shifted one-half pitch along the short axis to form a shift-type array, large stable field range for vortex states was obtained.

Current driven domain wall motion in magnetic U-pattern

We have studied the current induced domain wall motion by using patterned U geometry. The observation of two magnetic states of the U-pattern was evidenced. One is the vortex domain wall at the center of semicircular arc in U-pattern and the other is the continuous magnetic state without wall. We investigated the influence of the positive and negative dc current injection on domain wall motion before switching field with density on the order of ∼107A∕cm2. The critical current varied dramatically as the bias field is close to the switching field and only gradually as the field is far away from the switching field.

Variation of magnetization reversal in pseudo-spin-valve elliptical rings

We studied nanoscale elliptical ring shaped NiFe/Cu/NiFe trilayer pseudo-spin-valve structures. The magnetization reversal processes showed simultaneous-reversal single-step transition or double-step transition involving flux closure states. For various aspect ratios (short axis to long axis) and linewidths, transition between single-step and double-step magnetization reversals was measured to form a phase diagram. When the linewidth was reduced, edge roughness became important. Simulations of the magnetization reversal behavior agreed qualitatively with our results.

Magnetic switching and reversal process in a tip ring structure

Patterned Permalloy submicron-size structures have been fabricated by e-beam lithography in the shape of a ring with a tip. A tip was intentionally added into the ring as a geometrical defect to interrupt the continuity of the magnetization, which aligns along the ring, in order to pin the domain wall. Magnetic switching and reversal process have been measured by the magnetoresistance measurement. The switching field about 260 Oe was obtained. At the remanent state, there was a 0.21% difference in the magnetoresistance between the angles of 90° and 0° that was equivalent to the domain wall magnetoresistance. By applying an external field, the domain wall moved along the ring under a lower field (100 Oe), which is smaller than the switching field. A drop (0.24%) in the resistance between the angle of 70°–120° has been observed that means the domain wall was moving into the voltage measuring region during the rotation.

Vortex domain wall depinning by polarized current in submicron half-ring wires

Domain wall pinning force in the junctions (corners), with different shapes of square, semicircle, or triangle, of half-ring in-series wires is considered to study the current injection induced wall movements. This geometry has less thermal activation at the region of domain wall nucleation in contrast to notch structures. The wires with square corners have the largest domain pinning force to resist polarized current-induced magnetization reversal, judging from the largest slope in the current-field dependence (ΔI∕ΔH=0.274).

Influence of IrMn exchange bias layer on the magnetic properties of half-ring NiFe micron structures

The magnetization reversal behavior in half-ring NiFe structures and the influence of IrMn exchange bias layer was studied in this experiment. Two-step switching behavior, as in the ring shape, was observed when external field was in the short axis for single half-ring films. For NiFe–IrMn double layer structures, the unidirection anisotropy could be controlled by field cooling the samples. The exchange field strength did not follow a cosine curve when the external field was rotated in the sample plane. It could be attributed to the competition between the shape and the exchange anisotropies. When the strength of exchange field was strong, a single-step switching was observed. Two-step switching was retained for weaker exchange coupling.

Magnetization reversal study in submicron half-ring patterned wires with different corner structures

Magnetization reversal phenomena in submicron half-ring patterned wires with different corner structures have been investigated. The wires with corner structures of rectangular, semicircle, and triangular shapes were connected in series by two or five half-rings. The variation of domain structures with magnetic field is illustrated by electron transport measurements, simulation, and magnetic force microscopy (MFM) images. The switching behavior depends on the corner structures connecting the half-ring structures. These results are consistent with the domain pattern and magnetic phase shift observation provided by the MFM measurements.