K.Y. Yu

Removal of stacking-fault tetrahedra by twin boundaries in nanotwinned metals

Stacking-fault tetrahedra are detrimental defects in neutron- or proton-irradiated structural metals with face-centered cubic structures. Their removal is very challenging and typically requires annealing at very high temperatures, incorporation of interstitials or interaction with mobile dislocations. Here we present an alternative solution to remove stacking-fault tetrahedra discovered during room temperature, in situ Kr ion irradiation of epitaxial nanotwinned Ag with an average twin spacing of ~8 nm. A large number of stacking-fault tetrahedra were removed during their interactions with abundant coherent twin boundaries. Consequently the density of stacking-fault tetrahedra in irradiated nanotwinned Ag was much lower than that in its bulk counterpart. Two fundamental interaction mechanisms were identified, and compared with predictions by molecular dynamics simulations. In situ studies also revealed a new phenomenon: radiation-induced frequent migration of coherent and incoherent twin boundaries. Potential migration mechanisms are discussed.

Superior tolerance of Ag/Ni multilayers against Kr ion irradiation: an in situ study

Monolithic Ag and Ni films and Ag/Ni multilayers with individual layer thickness of 5 and 50 nm were subjected to in situ Kr ion irradiation at room temperature to 1 displacement-per-atom (a fluence of 2 × 1014 ions/cm2). Monolithic Ag has high density of small loops (4 nm in diameter), whereas Ni has fewer but much greater loops (exceeding 20 nm). In comparison, dislocation loops, ∼4 nm in diameter, were the major defects in the irradiated Ag/Ni 50 nm film, while the loops were barely observed in the Ag/Ni 5 nm film. At 0.2 dpa (0.4 × 1014 ions/cm), defect density in both monolithic Ag and Ni saturated at 1.6 and 0.2 × 1023/m3, compared with 0.8 × 1023/m3 in Ag/Ni 50 nm multilayer at a saturation fluence of ∼1 dpa (2 × 1014 ions/cm2). Direct observations of frequent loop absorption by layer interfaces suggest that these interfaces are efficient defect sinks. Ag/Ni 5 nm multilayer showed a superior morphological stability against radiation compared to Ag/Ni 50 nm film.

Size dependent strengthening mechanisms in sputtered Fe/W multilayers

We investigate size dependent strengthening mechanisms in sputtered Fe/W multilayers with individual layer thickness, h, varying from 1 to 200 nm. Microstructure analyses reveal that Fe/W has incoherent bcc/bcc interface when h is greater than 5 nm. When h decreases to 1–2.5 nm, the interface becomes semicoherent, and Fe and W show significant lattice distortions comparing to their bulk counterpart due to interface constraint. The layer thickness dependent drastic variations in x-ray diffraction profiles are simulated well by using an analytical model. Film hardness increases with decreasing h, and approaches a maximum value of 12.5 GPa when h is 1 nm. The layer thickness dependent film hardnesses are compared with analytical models. Koehler’s image force plays a major role in determining the maximum strength of composites at smaller h.

Magnetic properties of (CoFe2O4)x:(CeO2)1−x vertically aligned nanocomposites and their pinning properties in YBa2Cu3O7−δ thin films

Vertically aligned nanocomposites (VAN) combined ferrimagnetic CoFe2O4 with non-magnetic CeO2 ((CoFe2O4)x:(CeO2)1−x) in different phase ratios (x = 10%, 30% to 50%) have been grown by a pulsed laser deposition technique. Various unique magnetic domain structures form based on the VAN compositions and growth conditions. Anisotropic and tunable ferrimagnetic properties have been demonstrated. These ordered ferrimagnetic nanostructures have been incorporated into YBa2Cu3O7−δ thin films as both cap and buffer layers to enhance the flux pinning properties of the superconducting thin films. The results suggest that the ordered magnetic VAN provides effective pinning centers by both defect and magnetic nanoinclusions.

Radiation tolerant nanocrystalline ZrN films under high dose heavy-ion irradiations

ZrN, a refractory ceramic material, finds many potential applications in advanced nuclear reactors. However, the grain size dependent radiation response in nanocrystalline (nc) ZrN under high dose heavy ion irradiation has not yet been studied to date. Here, we compare the radiation response of nc-ZrN films (with a respective average grain size of ∼9 and 31 nm) to Fe2+ ion irradiations up to a damage level of 10 displacements-per-atom (dpa). The ZrN film with the average grain size of 9 nm shows prominently enhanced radiation tolerance as evidenced by suppressed grain growth, alleviated radiation softening, as well as reduced variation in electrical resistivity. In contrast, ZrN with the larger average grain size of 31 nm shows prominent radiation softening and resistivity increase, attributed to the high density of defect cluster formed inside the grains. The influence of grain boundaries on enhanced irradiation tolerance in nc-ZrN is discussed.