K. Yu. Chernoglazov

High-temperature ferromagnetism in Si1 − xMnx (x ≈ 0.5) nonstoichiometric alloys

It has been found that the Curie temperature (TC ≈ 300 K) in nonstoichiometric Si1 − xMnx alloys slightly enriched in Mn (x ≈ 0.52–0.55) in comparison to the stoichiometric manganese monosilicide MnSi becomes about an order of magnitude higher than that in MnSi (TC ∼ 30 K). Deviations from stoichiometry lead to a drastic decrease in the density of charge carries (holes), whereas their mobility at about 100 K becomes an order of magnitude higher than the value characteristic of MnSi. The high-temperature ferromagnetism is ascribed to the formation of defects with the localized magnetic moments and by their indirect exchange interaction mediated by the paramagnetic fluctuations of the hole spin density. The existence of defects with the localized magnetic moments in Si1 − xMnx alloys with x ≈ 0.52–0.55 is supported by the results of numerical calculations performed within the framework of the local-density-functional approximation. The increase in the hole mobility in the nonstoichiometric material is attributed to the decay of the Kondo (or spin-polaron) resonances presumably existing in MnSi.

Ferromagnetism of MnxSi1-x(x ∼ 0.5) films grown in the shadow geometry by pulsed laser deposition method

The results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x ≈ 0.51-0.52) films grown by the Pulsed Laser Deposition (PLD) technique onto Al2O3(0001) single crystal substrates at T = 340°C are present. A highlight of used PLD method is the non-conventional (“shadow”) geometry with Kr as a scattering gas during the sample growth. It is found that the films exhibit high-temperature (HT) ferromagnetism (FM) with the Curie temperature TC ∼ 370 K accompanied by positive sign anomalous Hall effect (AHE); they also reveal the polycrystalline structure with unusual distribution of grains in size and shape. It is established that HT FM order is originated from the bottom interfacial self-organizing nanocrystalline layer. The upper layer adopted columnar structure with the lateral grain size ≥50 nm, possesses low temperature (LT) type of FM order with Tc ≈ 46 K and contributes essentially to the magnetization at T ≤ 50 K. Under these conditions, AHE ...

Logarithmic temperature dependence of electrical resistivity of (Co41Fe39B20)x(Al–O)100 – x nanocomposites

The temperature dependence of the electrical conductivity σ(T) of (Co41Fe39B20)x(Al–O)100–x of nanocomposite films for different concentrations x of amorphous ferromagnetic metal (56 > x > 30) has been studied in the temperature range of 4.2–300 K. It has been shown that, for concentrations in the interval 56 > x > 49, the conductivity obeys the logarithmic law σ(T) = A(1 + αlnT), where A and α depend on the concentration. According to the theory developed by Efetov et al., this logarithmic dependence is connected with specificities of the Coulomb interaction in nanogranulated alloys on the intergranule tunneling in the transient region of concentrations from metallic conduction to the dielectric regime. The comparison of the theory with the experiment has revealed only qualitative agreement. The reasons of the quantitative disagreement have been discussed. The resistivity of samples with the concentrations lying in the range 49 > x > 30 obeys the 1/2 power law.

High-temperature ferromagnetism of Si1 − x Mn x films fabricated by laser deposition using the droplet velocity separation technique

The transport and magnetic properties of Si1 − xMnx films of thickness 55–70 nm with various Mn content (x = 0.44–0.6) are studied in the temperature range of 5–400 K and in magnetic fields up to 2 T. The films are grown by pulsed laser deposition on Al2O3 (0001) substrates at a temperature of 340°C using velocity separation of deposited particles. The films exhibit metal conductivity and the resistivity ρ = (2−8) × 10−4 Ω cm, typical of highly degenerate semiconductors. It is found that the anomalous component of the Hall effect dominates over the normal component at T = 300 K for the Si1 − xMnx alloy with x ≈ 0.5, and that the Curie temperature significantly exceeds room temperature and is estimated as ∼500 K from magnetization measurements (for MnSi silicide the Curie temperature is TC = 30 K). It is shown that the anomalous component of the Hall conductivity at low temperatures is controlled by “side-jump” and (or) “intrinsic” mechanisms independent on the carrier scattering time. The results are explained by features of the formation of defects with localized magnetic moments in the case of Si1 − xMnx films with x ≈ 0.5 and by the significant role of matrix spin fluctuations in the exchange between these defects.

Tunneling anomalous Hall effect in nanogranular CoFe-B-Al-O films near the metal-insulator transition

We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and longitudinal resistivity strongly differ, if temperature T or metal content x are variable parameters: Rh(T)~R(T)^0.4-0.5 obtained from the temperature variation of R and Rh at fixed x, while Rh(x)/x~R(x)^0.24, obtained from measurements at the fixed low temperature region (10-40 K) for samples with different x. We qualitatively describe our experimental data in the frame of phenomenological model of two sources of AHE e.m.f. arising from metallic nanogranules and insulating tunneling regions, respectively, at that the tunneling AHE (TAHE) source is strongly shunted due to generation of local circular Hall currents. We consider our experimental results as the first experimental proof of the TAHE manifestation.

High-frequency reactive diode sputtering of magnetite films on the sapphire surface

The conditions (oxygen partial pressure and growth rate) for the deposition of magnetite (iron oxide) Fe3O4 on the r plane of the single-crystalline sapphire using the high-frequency reactive diode sputtering of the Fe target are determined. The resulting ferromagnetic layers exhibit polycrystalline structure with a typical block size of 100–200 nm. The X-ray analysis is used to demonstrate that the textured phase of magnetite that is normally oriented with respect to the substrate dominates in the blocks and Fe and Fe2O3 impurities are almost absent.

Transport, Magnetic, and Memristive Properties of a Nanogranular (CoFeB) x (LiNbO y )100–x Composite Material

The properties of (CoFeB)x(LiNbOy)100–x nanocomposite films with a ferromagnetic alloy content x = 6–48 at % are comprehensively studied. The films are shown to consist of ensembles of CoFe granules 2–4 nm in size, which are strongly elongated (up to 10–15 nm) in the nanocomposite growth direction and are located in an LiNbOy matrix with a high content of Fe2+ and Co2+ magnetic ions (up to 3 × 1022 cm–3). At T ≤ 25 K, a paramagnetic component of the magnetization of nanocomposites is detected along with a ferromagnetic component, and the contribution of the former component is threefold that of the latter. A hysteresis of the magnetization is observed below the percolation threshold up to x ≈ 33 at %, which indicates the appearance of a superferromagnetic order in the nanocomposites. The temperature dependence of the electrical conductivity of the nanocomposites in the range T ≈ 10–200 K on the metallic side of the metal–insulator transition (44 at % < x < 48 at %) is described by a logarithmic law σ(T) ∝ lnT. This law changes into the law of “1/2” at x ≤ 40 at %. The tunneling anomalous Hall effect is strongly suppressed and the longitudinal conductivity turns out to be lower than in a (CoFeB)x(AlOy)100–x composite material by an order of magnitude. The capacitor structures based on (CoFeB)x(LiNbOy)100–x films exhibit resistive switching effects. They are related to (i) the formation of isolated chains of elongated granules and an anomalously strong decrease in the resistance in fields E > 104 V/cm because of the suppression of Coulomb blockage effects and the generation of oxygen vacancies VO and (ii) the injection (or extraction) of VO vacancies (depending on the sign of voltage) into a strongly oxidized layer in the nanocomposites, which is located near an electrode of the structure and controls its resistance. The number of stable resistive switchings exceeds 105 at a resistance ratio Roff/Ron ~ 50.

Conductivity and anomalous Hall effect in film magnetic nanocomposites based on nonstoichiometric oxides

The transport properties of film nanocomposites (Co40Fe40B20)x(AlOy)100 − x and (Co84Nb14Ta2)x(AlOy)100 − x based on AlOy oxide (y ~ 1), containing a ferromagnetic metal, are studied in the region of the metal–insulator transition (57 > x > 47 at %). It is found that at x > 49 at %, the conductivity of nanocomposites is well described by a logarithmic law of σ(T) = a + b ln T, which can be explained by the peculiarities of the Coulomb interaction in nanogranular systems with metallic conductivity near the metal—insulator transition. It is shown that parameter b is determined by the characteristic size of the percolation cluster cell, which in nanocomposites of both types happen to be the same (~8 nm) and correlates well with the results of electron microscopy studies. The temperature dependence of the anomalous Hall effect at the logarithmic dependence of conductivity is studied for the first time. In the immediate vicinity of the transition, a power-law scaling between the anomalous Hall resistance and longitudinal resistance ρHa ∝ ρ0.4, is detected, which can be explained by the suppression of its own mechanism of the anomalous Hall effect under the strong scattering of charge carriers.

Effects of resistive switching in Au/FeOx/Pt structures

The dynamics of forming and resistive switching in Au/iron oxide/Pt structures based on magnetite (Fe3O4) is investigated. It has been revealed that these processes have an electrochemical nature and are accompanied by formation of low-resistance conductive filaments formed by inclusions of magnetite in the matrix of high-resistance maghemite (γ-Fe2O3). It has been found that the electric field stimulates reversible redox reactions in iron oxide. The direction and rate of these reactions are determined by the polarity and the amplitude of voltage pulses. The possibility of setting the resistance of the structure by changing the amplitude of the “record” voltage pulses opens prospects for the development of multilevel memory elements.

Anomalous Hall effect in polycrystalline MnxSi1–x (x ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes

The structural, transport, and magnetic characteristics of polycrystalline MnxSi1–x (x ≈ 0.51–0.52) films grown by pulsed laser deposition onto Al2O3(0001) substrates when the low-energy components are deposited owing to collisions with the atoms of the buffer gas have been studied in the “shadow” geometry. The magnetization of these films is determined by two ferromagnetic phases—the high-temperature phase with the Curie temperature TC ≈ 370 K and the low-temperature one with TC ≈ 46 K. The anomalous Hall effect changes sign from positive to negative with a decrease in temperature. The sign change occurs in the temperature range of 30–50 K; the specific value of this temperature depends on the thickness of the MnxSi1–x film. The results can be interpreted in terms of the structural self-organization related to the formation of two layers in the course of film growth. These layers have nearly the same chemical composition but significantly differ in the shapes and sizes of crystallites. This leads to a drastic difference in the values of TC and in the value and the sign of the anomalous Hall effect for such layers.