Kai Elers

Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates

Abstract Diffusion barrier materials, such as TiN, W x N, WN x C y and their nanolaminates were deposited by atomic layer deposition method. TiN film exhibited excellent properties, but W x N film exhibited high resistivity despite the low residue concentration. Both TiN and W x N films suffered from serious incompatibility with the copper metal. WN x C y film was deposited by introducing triethylboron as a reducing agent for tungsten. Excellent film properties were obtained, including very good compatibility with the copper metal, evident as strong adhesion and no pitting on the copper surface. Nanolaminate barrier stacks of W x N/TiN and WN x C y /TiN were successfully deposited. TiN deposition did not cause copper pitting when thin WN x C y film was deposited underneath.

Enhancement of ALCVD TM TiN growth on Si-O-C and α-SiC:H films by O 2 -based plasma treatments

In advanced interconnection technologies, Atomic Layer Chemical Vapour Deposition (ALCVDTM) is a promising technique to deposit very conformal thin barriers on low-k dielectrics. To enhance the ALCVD growth, we have modified Si-O-C and α-SiC:H dielectric films by O2-based plasma treatments. This paper discusses the effect of the plasma on the growth of ALCVD TiN and the modifications induced at the surface and in the bulk of the dielectrics. The O2-based plasma enriches the dielectric surface with the OH group, improving the quality of the TiN films. Further optimisation of the surface treatments is needed to prevent undesired modification of the dielectric bulk.

Deposition of Cu barrier and seed layers with atomic layer control

The paper describes the atomic layer chemical vapor deposition (ALCVD/spl trade/) technique for manufacturing the Cu barrier and seed layers. In addition a novel and simple method for the removal of CuO from the bottom of the via is presented. The main emphasis of the paper is on the ALCVD/spl trade/ growth mechanisms and on the compatibility of barrier layer deposition with low-k materials and Cu metal.

Deposition of WN/sub x/C/sub y/ thin films by ALCVD/spl trade/ method for diffusion barriers in metallization

A new process of depositing ternary tungsten nitride carbide WN/sub x/C/sub y/ films as a diffusion barrier material for copper metallization has been developed with the atomic layer chemical vapor deposition (ALCVD/spl trade/) technology. The growth temperature was varied from 300 to 350/spl deg/C, and the resistivity was in a range of 300-400 /spl mu//spl Omega/cm for a /spl sim/25 nm film. The film composition was influenced by deposition conditions with a W, N and C content of approximately 55, 15, and 30 at.%, respectively. Impurities such as F, O, and B in the bulk of the film were low, less than 1 at.% or under the detection limit of analysis tools used. The deposited films showed excellent compatibility with different substrates including Cu, SiO/sub 2/, SiC, Si/sub x/N/sub y/, SiLK and Aurora. Preliminary electrical tests of WN/sub x/C/sub y/ on the dual damascene wafers showed promising results.