Kai Erik Ekstrøm

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si and mc-Si share similar lifetime-limiting defect types but have different relative concentrations and distributions. HPMC-Si shows a substantial lifetime improvement after P-gettering compared with mc-Si, chiefly because of lower area fraction of dislocation-rich clusters. In both materials, the dislocation clusters and grain boundaries were associated with relatively higher interstitial iron point-defect concentrations after diffusion, which is suggestive of dissolving metal-impurity precipitates. The relatively fewer dislocation clusters in HPMC-Si are shown to exhibit similar characteristics to those found in mc-Si. Given similar governing principles, a proxy to determine relative recombination activity of dislocation clusters developed for mc-Si is successfully transferred to HPMC-Si. The lifetime in the remainder of HPMC-Si material is found to be limited by grain-boundary recombination. To reduce the recombination activity of grain boundaries in HPMC-Si, coordinated impurity control during growth, gettering, and passivation must be developed.

High performance multicrystalline silicon: Grain structure and iron precipitation

A study of the spatial occurrence of iron precipitation in a high performance multicrystalline silicon (HPMC-Si) sample is presented. The separated effects of grain-boundaries, sparse intra-granular dislocations, and dislocation clusters are investigated by combining the Fei imaging method with glow discharge mass spectroscopy, electron backscatter diffraction, and two iron precipitation models. While the area-averaged precipitation at grain boundaries is relatively minor, almost the whole iron precipitation occurs within the grains, despite the very low intra-granular dislocation density. The fraction of non-precipitated iron in the studied HPMC-Si material was found to be one to two orders of magnitude higher than that reported previously for standard materials.