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Dive into the research topics where Kalpataru Panda is active.

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Featured researches published by Kalpataru Panda.


Journal of Applied Physics | 2011

Structural and electronic properties of nitrogen ion implanted ultra nanocrystalline diamond surfaces

Kalpataru Panda; B. Sundaravel; B. K. Panigrahi; P. Magudapathy; D. Nandagopala Krishna; K. G. M. Nair; Huang-Chin Chen; I-Nan Lin

Enhanced electron field emission (EFE) properties have been observed for nitrogen implanted ultra-nanocrystalline diamond (UNCD) films grown by microwave plasma enhanced CVD. X-ray photoelectron spectroscopy (XPS) measurements show that sp2 fraction and C-N bonding increase upon N-implantation and annealing. Significant difference in current-voltage (I-V) curves at the grain and grain boundary has been observed from scanning tunneling spectroscopic (STS) measurement. From the variation of normalized conductance (dI/dV)/(I/V) versus V, bandgap is measured to be 4.8 eV at the grain and 3.8 eV at the grain boundary for as prepared UNCD. Upon nitrogen implantation and annealing, the bandgap decreases for both grain and grain boundary and density of states are introduced in the bandgap. Current imaging tunneling spectroscopy (CITS) imaging shows that the grain boundaries have higher conductivity than the grains and are the prominent electron emitters. The enhancement in EFE properties upon nitrogen implantatio...


Journal of Applied Physics | 2014

Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing

Kamatchi Jothiramalingam Sankaran; Kalpataru Panda; B. Sundaravel; Nyan-Hwa Tai; I-Nan Lin

Copper ion implantation and subsequent annealing at 600 °C achieved high electrical conductivity of 95.0 (Ωcm)−1 for ultrananocrystalline diamond (UNCD) films with carrier concentration of 2.8 × 1018 cm−2 and mobility of 6.8 × 102 cm2/V s. Transmission electron microscopy examinations reveal that the implanted Cu ions first formed Cu nanoclusters in UNCD films, which induced the formation of nanographitic grain boundary phases during annealing process. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the nanographitic phases presence in the grain boundaries formed conduction channels for efficient electron transport, ensuing in excellent electron field emission (EFE) properties for copper ion implanted/annealed UNCD films with low turn-on field of 4.80 V/μm and high EFE current density of 3.60 mA/cm2 at an applied field of 8.0 V/μm.


ACS Applied Materials & Interfaces | 2012

Engineering the Interface Characteristics of Ultrananocrystalline Diamond Films Grown on Au-Coated Si Substrates

Kamatchi Jothiramalingam Sankaran; Kalpataru Panda; B. Sundaravel; Huang-Chin Chen; I-Nan Lin; Chi-Young Lee; Nyan-Hwa Tai

Enhanced electron field emission (EFE) properties have been observed for ultrananocrystalline diamond (UNCD) films grown on Au-coated Si (UNCD/Au-Si) substrates. The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/μm, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/μm, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process. Moreover, a significant difference in current-voltage curves from scanning tunneling spectroscopic measurements at the grain and the grain boundary has been observed. From the variation of normalized conductance (dI/dV)/(I/V) versus V, bandgap of UNCD/Au-Si is measured to be 2.8 eV at the grain and nearly metallic at the grain boundary. Current imaging tunneling spectroscopy measurements show that the grain boundaries have higher electron field emission capacity than the grains. The diffusion of Au into the interface layer that results in the induction of graphite and converts the metal-to-Si interface from Schottky to Ohmic contact is believed to be the authentic factors, resulting in marvelous EFE properties of UNCD/Au-Si.


Scientific Reports | 2016

Energy efficient reduced graphene oxide additives: Mechanism of effective lubrication and antiwear properties

Bhavana Gupta; N. Kumar; Kalpataru Panda; S. Dash; A.K. Tyagi

Optimized concentration of reduced graphene oxide (rGO) in the lube is one of the important factors for effective lubrication of solid body contacts. At sufficiently lower concentration, the lubrication is ineffective and friction/wear is dominated by base oil. In contrast, at sufficiently higher concentration, the rGO sheets aggregates in the oil and weak interlayer sliding characteristic of graphene sheets is no more active for providing lubrication. However, at optimized concentration, friction coefficient and wear is remarkably reduced to 70% and 50%, respectively, as compared to neat oil. Traditionally, such lubrication is described by graphene/graphite particle deposited in contact surfaces that provides lower shear strength of boundary tribofilm. In the present investigation, graphene/graphite tribofilm was absent and existing traditional lubrication mechanism for the reduction of friction and wear is ruled out. It is demonstrated that effective lubrication is possible, if rGO is chemically linked with PEG molecules through hydrogen bonding and PEG intercalated graphene sheets provide sufficiently lower shear strength of freely suspended composite tribofilm under the contact pressure. The work revealed that physical deposition and adsorption of the graphene sheets in the metallic contacts is not necessary for the lubrication.


ACS Applied Materials & Interfaces | 2014

Direct observation and mechanism for enhanced electron emission in hydrogen plasma-treated diamond nanowire films.

Kalpataru Panda; Kamatchi Jothiramalingam Sankaran; Binaya Kumar Panigrahi; Nyan-Hwa Tai; I-Nan Lin

The effect of hydrogen plasma treatment on the electrical conductivity and electron field emission (EFE) properties for diamond nanowire (DNW) films were systematically investigated. The DNW films were deposited on silicon substrate by N2-based microwave plasma-enhanced chemical vapor deposition process. Transmission electron microscopy depicted that DNW films mainly consist of wirelike diamond nanocrystals encased in a nanographitic sheath, which formed conduction channels for efficient electron transport and hence lead to excellent electrical conductivity and EFE properties for these films. Hydrogen plasma treatment initially enhanced the electrical conductivity and EFE properties of DNW films and then degraded with an increase in treatment time. Scanning tunneling spectroscopy in current imaging tunneling spectroscopy mode clearly shows significant increase in local emission sites in 10 min hydrogen plasma treated diamond nanowire (DNW10) films as compared to the pristine films that is ascribed to the formation of graphitic phase around the DNWs due to the hydrogen plasma treatment process. The degradation in EFE properties of extended (15 min) hydrogen plasma-treated DNW films was explained by the removal of nanographitic phase surrounding the DNWs. The EFE process of DNW10 films can be turned on at a low field of 4.2 V/μm and achieved a high EFE current density of 5.1 mA/cm(2) at an applied field of 8.5 V/μm. Moreover, DNW10 films with high electrical conductivity of 216 (Ω cm)(-1) overwhelm that of other kinds of UNCD films and will create a remarkable impact to diamond-based electronics.


ACS Applied Materials & Interfaces | 2013

Structural and Electrical Properties of Conducting Diamond Nanowires

Kamatchi Jothiramalingam Sankaran; Yen-Fu Lin; Wen-Bin Jian; Huang-Chin Chen; Kalpataru Panda; B. Sundaravel; Chung-Li Dong; Nyan-Hwa Tai; I-Nan Lin

Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Motts variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.


Scientific Reports | 2017

Role of oxygen functional groups in reduced graphene oxide for lubrication

Bhavana Gupta; Niranjan Kumar; Kalpataru Panda; Vigneshwaran Kanan; Shailesh Joshi; Iris Visoly-Fisher

Functionalized and fully characterized graphene-based lubricant additives are potential 2D materials for energy-efficient tribological applications in machine elements, especially at macroscopic contacts. Two different reduced graphene oxide (rGO) derivatives, terminated by hydroxyl and epoxy-hydroxyl groups, were prepared and blended with two different molecular weights of polyethylene glycol (PEG) for tribological investigation. Epoxy-hydroxyl-terminated rGO dispersed in PEG showed significantly smaller values of the friction coefficient. In this condition, PEG chains intercalate between the functionalized graphene sheets, and shear can take place between the PEG and rGO sheets. However, the friction coefficient was unaffected when hydroxyl-terminated rGO was coupled with PEG. This can be explained by the strong coupling between graphene sheets through hydroxyl units, causing the interaction of PEG with the rGO to be non- effective for lubrication. On the other hand, antiwear properties of hydroxyl-terminated rGO were significantly enhanced compared to epoxy-hydroxyl functionalized rGO due to the integrity of graphene sheet clusters.


RSC Advances | 2015

Chemically grafted graphite nanosheets dispersed in poly(ethylene-glycol) by γ-radiolysis for enhanced lubrication

Bhavana Gupta; Kalpataru Panda; Niranjan Kumar; Ambrose A. Melvin; S. Dash; Ashok Kumar Tyagi

Graphite nanosheets (Gr-NS) dispersed in poly(ethylene-glycol) (PEG200) medium were subjected to various doses of γ-irradiation. Hydroxyl functional groups present in PEG are chemically grafted through hydrogen bonding with hydroxyl, carbonyl and carboxylic groups of Gr-NS. The grafting process is driven by the generation of active radicals from solvent radiolysis. Chemical grafting was investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transform infra-red (FTIR) spectroscopy. The results of spectroscopic studies revealed reduction in oxygen functionality of PEG-Gr-NS at higher doses of γ-irradiation. The γ-irradiation not only bridges the functionalities between PEG and PEG-Gr-NS but edge and basal plane defects in Gr-NS are further reduced as is evident from Raman analysis. The inter-planar sheet distance in Gr-NS is increased due to intercalated chemical grafting with PEG molecules. The chemical grafting between PEG and Gr-NS and reduction in defects enhance the tribological properties with a decrease of 26% and 32% for the friction coefficient and wear, respectively as compared to PEG alone. The lubrication mechanism is mediated through inter-planar weak forces when PEG is chemically grafted with Gr-NS. The electrostatic interaction of PEG with Gr-NS acts as a molecular bridge thus enhancing the sustainability of tribo-stress. Additionally, in the presence of functionalized PEG-Gr-NS tribo-contact conditions, evidence of deposited graphitic tribo-film was observed from micro-Raman spectroscopy inside the steel wear track. This film further enhanced lubrication mediated through low shear strength interlayer graphite sheets and therefore, antiwear properties were synergistically improved.


RSC Advances | 2012

Enhancement of electron field emission properties of TiO2−x nanoplatelets by N-doping

N.C. Raut; Tom Mathews; Kalpataru Panda; B. Sundaravel; S. Dash; A. K. Tyagi

Thin films of TiO2−x and TiO2−x−yN2y nano-platelets having better field emission properties compared to one dimensional nanostructures reported in literature were synthesized by spray pyrolysis. Low threshold field of 8 V μm−1 and 4.1 V μm−1, for 1 mA cm2, was observed for TiO2−x and TiO2−x−yN2y respectively, implying enhanced field emission upon N-doping.


AIP Advances | 2012

Tribological properties of nanocrystalline diamond films deposited by hot filament chemical vapor deposition

N. Kumar; Kalpataru Panda; S. Dash; C. Popov; J.P. Reithmaier; B.K. Panigrahi; A. K. Tyagi; Baldev Raj

The dependence of the structural and morphological properties of nanocrystalline diamond films grown by hot filament chemical vapor deposition on the substrate temperature was studied. Friction coefficients of these films were measured and found to vary from high to ultra low, depending on the chemical nature of the films i.e., sp2 and sp3 phase fractions. For all films, the friction coefficient was found to decrease with increase in sp2/sp3 phase fraction. The wear rate follows the trend of the friction coefficient and was likewise found to depend on the structural and morphological properties of the films. For all the films, the friction coefficient is found to decrease with normal load which is ascribed to sliding induced surface amorphization/graphitization.

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S. Dash

Indira Gandhi Centre for Atomic Research

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A. K. Tyagi

Indira Gandhi Centre for Atomic Research

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N. Kumar

Indira Gandhi Centre for Atomic Research

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B. K. Panigrahi

Indira Gandhi Centre for Atomic Research

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Nyan-Hwa Tai

National Tsing Hua University

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B. Sundaravel

Indira Gandhi Centre for Atomic Research

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Niranjan Kumar

Indira Gandhi Centre for Atomic Research

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