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Kaneda Naoki

Sumitomo Chemical

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Publication

Featured researches published by Kaneda Naoki.

Archive | 2013

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Kaneda Naoki; Tsuchiya Tadayoshi; Mishima Tomoyoshi

Archive | 2014

NITRIDE SEMICONDUTOR DEVICE

Tsuchiya Tadayoshi; Kaneda Naoki; Mishima Tomoyoshi

Archive | 2014

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND RECTIFIER DIODE

Tsuchiya Tadayoshi; Kaneda Naoki

Archive | 2016

Semiconductor lamination structure and method of manufacturing the same

Kaneda Naoki; Mishima Tomoyoshi; Nakamura Tohru

Archive | 2015

SEMICONDUCTOR LAMINATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME

Kaneda Naoki; Mishima Tomoyoshi; Nakamura Toru

Technical report of IEICE. LQE | 2013

Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

Shiojima Kenji; Kihara Yuhei; Aoki Toshichika; Kaneda Naoki; Mishima Tomoyoshi

IEICE technical report. Electron devices | 2013

AC Operation of Low-Mg-Doped p-GaN Schottky Diodes

Shiojima Kenji; Aoki Toshichika; Kaneda Naoki; Mishima Tomoyoshi

IEICE Technical Report; IEICE Tech. Rep. | 2012

Effect of ICP Etching on p-type GaN Schottky Contacts

Takahashi Toshifumi; Kaneda Naoki; Mishima Tomoyoshi; Nomoto Kazuki; Shiojima Kenji

IEICE Technical Report; IEICE Tech. Rep. | 2012

Photon-recycling GaN p+n Diodes

Mochizuki Kazuhiro; Nomoto Kazuki; Hatakeyama Yoshitomo; Katayose Hideo; Mishima Tomoyoshi; Kaneda Naoki; Tsuchiya Tadayoshi; Terano Akihisa; Ishigaki Takashi; Tsuchiya Tomonobu; Tsuchiya Ryuta; Nakamura Tohru

IEICE Technical Report; IEICE Tech. Rep. | 2012

Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts

Takahashi Toshifumi; Kaneda Naoki; Mishima Tomoyoshi; Kajiwara Takashi; Tanaka Satoru; Shiojima Kenji

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Collaboration

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Mishima Tomoyoshi

Hitachi

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Tsuchiya Tadayoshi

Hitachi

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