Kaori Akamatsu | Researchain

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Japanese Journal of Applied Physics | 1996

Experimental Study of Impact Ionization Phenomena in Sub- 0.1 µm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

Atsushi Hori; Akira Hiroki; Kaori Akamatsu; Shinji Odanaka

Impact ionization phenomenon in sub-0.1 μm Si metal-oxide-semiconductor field effect transistors (MOSFETs) has been examined in detail. N-MOSFETs with gate oxide of 4, 6 and 8 nm thickness were fabricated using pocket implantation technology. The test devices have n + polysilicon gate electrodes and shallow extension formed by arsenic implantation at the acceleration voltage of 15 keV. Sub-band-gap impact ionization can be observed for the 0.08 μm N-MOSFET. It is clearly observed that thin gate oxide suppresses impact ionization. Simulation results reveal that the lateral electric field near the drain is decreased by thinner gate oxide of 4 nm thickness. In addition, the dependence of the impact ionization rate on the gate oxide thickness decreases with decreasing gate length.

Archive | 1997

Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit

Shinji Odanaka; Kaori Akamatsu; Junichi Kato; Atsushi Hori; Seiki Ogura

Archive | 2007

Semiconductor device having internal stress film

Masafumi Tsutsui; Hiroyuki Umimoto; Kaori Akamatsu

Archive | 1999

Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device

Shinji Odanaka; Kaori Akamatsu; Junichi Kato; Atsushi Hori; Seiki Ogura

Archive | 2000

Nonvolatile semiconductor device capable of increased electron injection efficiency

Shinji Odanaka; Kaori Akamatsu; Junichi Kato; Atsushi Hori; Seiki Ogura

Archive | 2012

METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT, DISPLAY PANEL, AND DISPLAY DEVICE

Takashi Isobe; Kosuke Mishima; Kaori Akamatsu; Satoru Ohuchi

Archive | 2009

Light-emitting device and display apparatus

Kaori Akamatsu; Hidehiro Yoshida

Archive | 2013

ORGANIC LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR

Saori Yamashita; Kaori Akamatsu

Archive | 1998

Non-volatile semiconductor memory device, manufacture thereof and semiconductor integrated circuit device

Kaori Akamatsu; Atsushi Hori; Junichi Kato; Shinji Odanaka; Seiki Ogura; 淳一加藤; 正気小椋; 紳二小田中; かおり赤松

Archive | 2012

SEMICONDUCTOR DEVICE INCLUDING A STRESS FILM

Masafumi Tsutsui; Hiroyuki Umimoto; Kaori Akamatsu

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