Kari Leinonen

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

Abstract Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19 × 19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser.

Ion-implanted silicon detectors processed on a 100 mm wafer

Abstract A planar process for manufacturing large silicon detectors on a 100 mm wafer has been developed. Several oxidation and annealing temperatures were studied in order to optimize detector performance. A strip detector with an active area of 32 × 58 mm2 together with various single detector diodes were processed and tested. The 1280 strip detector with 25 μm strip and readout pitch was connected to multiplexing LSI electronics and tested with tracks from a 90Sr beta source. The most probable signal pulse height was found to be 14 times the σnoise of any individual channel.

Double-sided capacitively coupled silicon strip detectors on a 100mm water

Abstract Silicon strip detectors with double-sided readout have been designed and processed on 100 mm silicon wafers. Detectors with integrated coupling capacitors and polysilicon bias resistors were tested by static electrical measurements, laser illumination and with tracks from a 90 Sr source. Strip separation on the detector n-side has been achieved by the use of capacitively coupled readout electrodes as field-plates. Interstrip resistance of > 10 Mω has been measured in all detector designs. Measurements with 90 Sr tracks show S/N = 21 on the detector p-side and S/N = 18 on the n-side.

Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.