Karim Segueni

Low actuation voltage totally free flexible RF MEMS switch with antistiction system

This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5 V) and avoid stiction. First, the structure described with principal design issues, the corresponding antistiction system is presented and FEM simulations are done. Then, a short description of the process flow based on two non polymer sacrificial layers. Finally, RF measurements are presented and preliminary experimental protocol and results of anti-stiction validation is detailed. Resulting RF performances are -30 dB of isolation and -0.45 B of insertion loss at 10 GHz.

Totally free-flexible membrane for low voltage MEMS metal contact switch

This paper presents results concerning an electromechanical DC-contact shunt switch based on a patented totally free-flexible metal membrane combined with an associated low temperature surface micromachining fabrication process. The electrostatic actuation enables an average measured actuation voltage of 9.2V for a 5 mum out-of-plane membrane deflection. The switch exhibits low insertion loss (0.32 dB @ 10GHz) with good isolation (>30dB @ 10GHz).

A new four states high deflection low actuation voltage electrostatic MEMS switch for RF applications

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4 mum) with low actuation voltage (7,5 V). This design presents also a good contact force and improves the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24 GHz applications, based on this design, has been simulated.

A Totally Free Flexible Membrane: A Design for Low Electrostatic Actuation MEMS

This paper presents a new electro-mechanical structure based on a totally free flexible membrane. This structure allows low actuation voltage (< 6.5 V) and more reliable mechanical behavior in terms of induced stress and environmental constraints. RF MEMS switch is presented as main application for low electrostatic actuation.