Karin Zojer
Graz University of Technology
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Featured researches published by Karin Zojer.
Nanotechnology | 2013
Mario Arar; Manfred Gruber; Michael Edler; Wernfried Haas; Ferdinand Hofer; Neha Bansal; Luke X. Reynolds; Saif A. Haque; Karin Zojer; Gregor Trimmel; Thomas Rath
We present a thorough study on the various impacts of polymer:nanoparticle ratios on morphology, charge generation and device performance in hybrid solar cells, comprising active layers consisting of a conjugated polymer and in situ prepared copper indium sulfide (CIS) nanoparticles. We conducted morphological studies through transmission electron microscopy and transient absorption measurements to study charge generation in absorber layers with polymer:nanoparticle weight ratios ranging from 1:3 to 1:15. These data are correlated to the characteristic parameters of the prepared solar cells. To gain a deeper understanding of our experimental findings, three-dimensional drift-diffusion-based simulations were performed. Based on elaborate descriptions of the contributions of polymer and nanoparticle phase to device performances, our results suggest that a polymer:CIS volume ratio of 1:2 (weight ratio 1:9) is necessary to obtain a balanced hole and electron percolation. Also at higher CIS loadings the photocurrent remains surprisingly high due to the contribution of the CIS phase to the charge carrier generation.
Journal of Physical Chemistry C | 2015
Yiming Liu; Karin Zojer; Benny Lassen; Jakob Kjelstrup-Hansen; Horst-Günter Rubahn; Morten Madsen
Reduced Langevin recombination has been observed in organic solar cells (OSCs) for many years, but its origin is still unclear. A recent work by Burke et al. (Adv. Energy Mater.2015, 5, 1500123-1) was inspired by this reduced Langevin recombination, and they proposed an equilibrium model of charge-transfer (CT) states that correlates the open-circuit voltage of OSCs with experimentally available device parameters. In this work, we extend Burke et al.’s CT model further and for the first time directly correlate the reduced Langevin recombination with the energetic and dynamic behavior of the CT state. Recombination through CT states leads in a straightforward manner to a decrease in the Langevin reduction factor with increasing temperature, without explicit consideration of the temperature dependence of the mobility. To verify the correlation between the CT states and reduced Langevin recombination, we incorporated this CT model and the reduced Langevin model into drift-diffusion simulations of a bilayer OSC. The simulations not only successfully reproduced realistic current–voltage (J–V) characteristics of the bilayer OSC, but also demonstrate that the two models consistently lead to same value of the apparent Langevin reduction factor.
Nature Communications | 2018
Max L. Tietze; Johannes Benduhn; Paul Pahner; Bernhard Nell; Martin Schwarze; Hans Kleemann; Markus Krammer; Karin Zojer; Koen Vandewal; Karl Leo
Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier. Here we quantitatively investigate doping as a two-step process, involving single-electron transfer from donor to acceptor molecules and subsequent dissociation of the ground-state integer-charge transfer complex (ICTC). We show that carrier release by ICTC dissociation has an activation energy of only a few tens of meV, despite a Coulomb binding of several 100 meV. We resolve this discrepancy by taking energetic disorder into account. The overall doping process is explained by an extended semiconductor model in which occupation of ICTCs causes the classically known reserve regime at device-relevant doping concentrations.Molecular doping is routinely used in organic semiconductor devices nowadays, but the physics at play remains unclarified. Tietze et al. describe it as a two-step process and show it costs little, energetically, to dissociate charge transfer complexes due to energetic disorder of organic semiconductors.
Scientific Reports | 2018
Bhushan Ramesh Patil; Mehrad Ahmadpour; Golnaz Sherafatipour; Talha Qamar; Anton F. Fernández; Karin Zojer; Horst-Günter Rubahn; Morten Madsen
Standard and inverted configuration small molecule OPV cells incorporating bathocuproine (BCP) as electron transport and exciton blocking layer is investigated, demonstrating that 2 mm2 standard and inverted cells display a maximum performance for BCP thicknesses of 10 nm and 1.5 nm, respectively. The reason for the different optimum BCP thicknesses for the two device configurations is the BCP-metal complex formed between the Ag electrode and the BCP layer in the standard configuration OPV devices. Interestingly, at optimum BCP thicknesses, the inverted OPV cells outperform the standard devices. Upon up-scaling of the device area of the cells from 2 mm2 to 10 and 100 mm2, device failure becomes prominent for the inverted OPV cells, due to aggregation of the evaporated BCP layer on the ITO surface. This demonstrates that although BCP can be adopted for efficient ETL in inverted configuration OPV devices on small scale, it is not suitable for device up-scaling due to severely decreasing device yields. In this work, a possible solution where an ultrathin layer of C70 is evaporated between the ITO and BCP layer is proposed. It is demonstrated that the proposed solution holds a strong potential to minimize the device failures of the BCP based inverted OPV cells to a significant extent, while maintaining good device performances.
Applied Physics Letters | 2017
Anton F. Fernández; Karin Zojer
Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest...
Scientific Reports | 2016
Karin Zojer; Thomas Rothländer; Johanna Kraxner; Roland Schmied; Ursula Palfinger; Harald Plank; Werner Grogger; Anja Haase; Herbert Gold; Barbara Stadlober
Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.
Nature Communications | 2018
Max L. Tietze; Johannes Benduhn; Paul Pahner; Bernhard Nell; Martin Schwarze; Hans Kleemann; Markus Krammer; Karin Zojer; Koen Vandewal; Karl Leo
The original version of this Article contained an error in Equation 1. A factor of ‘c’ was included in the right-hand term. This has been corrected in the PDF and HTML versions of the Article.
Journal of the American Chemical Society | 2018
Yanxi Zhang; Saurabh Soni; Theodorus L. Krijger; Pavlo Gordiichuk; Xinkai Qiu; Gang Ye; Harry T. Jonkman; Andreas Herrmann; Karin Zojer; Egbert Zojer; Ryan C. Chiechi
Molecular tunneling junctions should enable the tailoring of charge-transport at the quantum level through synthetic chemistry but are hindered by the dominance of the electrodes. We show that the frontier orbitals of molecules can be decoupled from the electrodes, preserving their relative energies in self-assembled monolayers even when a top-contact is applied. This decoupling leads to the remarkable observation of tunneling probabilities that increase with distance in a series of oligothiophenes, which we explain using a two-barrier tunneling model. This model is generalizable to any conjugated oligomers for which the frontier orbital gap can be determined and predicts that the molecular orbitals that dominate tunneling charge-transport can be positioned via molecular design rather than by domination of Fermi-level pinning arising from strong hybridization. The ability to preserve the electronic structure of molecules in tunneling junctions facilitates the application of well-established synthetic design rules to tailor the properties of molecular-electronic devices.
Journal of Physical Chemistry C | 2015
Yiming Liu; Karin Zojer; Benny Lassen; Jakob Kjelstrup-Hansen; Horst-Günter Rubahn; Morten Madsen
Reduced Langevin recombination has been observed in organic solar cells (OSCs) for many years, but its origin is still unclear. A recent work by Burke et al. (Adv. Energy Mater.2015, 5, 1500123-1) was inspired by this reduced Langevin recombination, and they proposed an equilibrium model of charge-transfer (CT) states that correlates the open-circuit voltage of OSCs with experimentally available device parameters. In this work, we extend Burke et al.’s CT model further and for the first time directly correlate the reduced Langevin recombination with the energetic and dynamic behavior of the CT state. Recombination through CT states leads in a straightforward manner to a decrease in the Langevin reduction factor with increasing temperature, without explicit consideration of the temperature dependence of the mobility. To verify the correlation between the CT states and reduced Langevin recombination, we incorporated this CT model and the reduced Langevin model into drift-diffusion simulations of a bilayer OSC. The simulations not only successfully reproduced realistic current–voltage (J–V) characteristics of the bilayer OSC, but also demonstrate that the two models consistently lead to same value of the apparent Langevin reduction factor.
Journal of Physical Chemistry C | 2015
Yiming Liu; Karin Zojer; Benny Lassen; Jakob Kjelstrup-Hansen; H.-G. Rubahn; Morten Madsen
Reduced Langevin recombination has been observed in organic solar cells (OSCs) for many years, but its origin is still unclear. A recent work by Burke et al. (Adv. Energy Mater.2015, 5, 1500123-1) was inspired by this reduced Langevin recombination, and they proposed an equilibrium model of charge-transfer (CT) states that correlates the open-circuit voltage of OSCs with experimentally available device parameters. In this work, we extend Burke et al.’s CT model further and for the first time directly correlate the reduced Langevin recombination with the energetic and dynamic behavior of the CT state. Recombination through CT states leads in a straightforward manner to a decrease in the Langevin reduction factor with increasing temperature, without explicit consideration of the temperature dependence of the mobility. To verify the correlation between the CT states and reduced Langevin recombination, we incorporated this CT model and the reduced Langevin model into drift-diffusion simulations of a bilayer OSC. The simulations not only successfully reproduced realistic current–voltage (J–V) characteristics of the bilayer OSC, but also demonstrate that the two models consistently lead to same value of the apparent Langevin reduction factor.