Karl Welna

Low-power continuous-wave generation of visible harmonics in silicon photonic crystal nanocavities.

We present the first demonstration of frequency conversion by simultaneous second- and third-harmonic generation in a silicon photonic crystal nanocavity using continuous-wave optical excitation. We observe a bright dual wavelength emission in the blue/green (450-525 nm) and red (675-790 nm) visible windows with pump powers as low as few microwatts in the telecom bands, with conversion efficiencies of ∼ 10 (-5) /W and ∼ 10/ W(2) for the second- and third-harmonic, respectively. Scaling behaviors as a function of pump power and cavity quality-factor are demonstrated for both second- and third order processes. Successful comparison of measured and calculated emission patterns indicates that third-harmonic is a bulk effect while second-harmonic is a surface-related effect at the sidewall holes boundaries. Our results are promising for obtaining practical low-power, continuous-wave and widely tunable multiple harmonic generation on a silicon chip.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.

Novel Dispersion-Adapted Photonic Crystal Cavity With Improved Disorder Stability

We present a photonic crystal cavity (PhCC) design methodology that is based on systematically engineering the dispersion curve of a PhC line-defect. Our combined numerical and analytical approach offers the option of using a variety of different defect modifications to create a gentle-confinement cavity with a Gaussian profile. Here, we demonstrate the principle of the method by employing relatively large hole-shifts (tens of nanometers), aiming for improved stability against disorder. Such improved stability compared with the established hetero-structure design approach is then experimentally confirmed on cavities fabricated in silicon. We point out some design features that are linked to this improved disorder stability. In addition, we note that different types of cavities exhibit dissimilar fabrication-limited Q-factors despite identical fabrication process.

Enhanced 1.54 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities.

We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 μm is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 µm wavelength on a silicon platform.

Fabrication and characterization of photonic crystal slow light waveguides and cavities.

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals(1-4) and the enhancement of both linear(5-7) and nonlinear devices.(8-11) Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically(12) and electrically(13) pumped ultra-low threshold lasers and the enhancement of nonlinear effects.(14-16) Furthermore, passive filters(17) and modulators(18-19) have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption. To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues. The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum(20-21) and interferometric techniques.(22-25) Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.(26) Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans. When characterising photonic crystal cavities, techniques involving internal sources(21) or external waveguides directly coupled to the cavity(27) impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.(28) and further developed by Galli et al.(29).

Integrated polymer microprisms for free space optical beam deflecting

We demonstrate beam deflection and multiple channel communication in free space optical communications using microprisms integrated directly onto an array of vertical cavity surface emitting lasers (VCSELs). The design and fabrication of such a transmitter is presented, and shown to achieve beam deflection of up to 10 degrees in a planar configuration. A location discovery application, for use within a distributed network, is put forward and analysed.

Nonlinear optics in Silicon photonic crystal cavities

Silicon is known to be a very good material for the realization of high-Q, low-volume photonic cavities, but at the same it is usually considered as a poor material for nonlinear optical functionalities like second-harmonic generation, because its second-order nonlinear susceptibility vanishes in the dipole approximation. In this work we demonstrate that nonlinear optical effects in silicon nanocavities can be strongly enhanced and even become macroscopically observable. We employ photonic crystal nanocavities in silicon membranes that are optimized simultaneously for high quality factor and efficient coupling to an incoming beam in the far field. Using a low-power, continuous-wave laser at telecommunication wavelengths as a pump beam, we demonstrate simultaneous generation of second- and third harmonics in the visible region, which can be observed with a simple camera. The results are in good agreement with a theoretical model that treats third-harmonic generation as a bulk effect in the cavity region, and second-harmonic generation as a surface effect arising from the vertical hole sidewalls. Optical bistability is also observed in the silicon nanocavities and its physical mechanisms (optical, due to two-photon generation of free carriers, as well as thermal) are investigated.

Optical beam-steering for wireless sensor networks

We demonstrate beam-steering with vertical-cavity surface-emitting lasers (VCSELs) for wireless communication in sensor networks. We demonstrate static beam-steering using integrated microprisms and introduce a dynamic beam-steering technique based on coupled VCSEL arrays.

Silicon photonic crystals: light emission, modulation and detection

Integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for on-chip WDM systems. A number of device geometries have already been demonstrated that fulfill these criteria, at least in part, but combining all of the requirements is still a difficult challenge. I will present our recent work on photonic crystal enhanced light sources, modulators and detectors for silicon photonics, that promise to give the ultimate in low energy and area consumption.

Room temperature electrically pumped silicon nano-light source at telecommunication wavelengths

We demonstrate electrically pumped silicon nano-light source at room temperature, having very narrow emission line (<0.5nm) at 1500nm wavelength, by enhancing the electroluminescence (EL) via combination of hydrogen plasma treatment and Purcell effect. The measured output power spectral density is 0.8mW/nm/cm2, which is highest ever reported value from any silicon light emitter.