Karthik Krishnaswamy

BaSnO3 as a channel material in perovskite oxide heterostructures

BaSnO3 (BSO) is a transparent perovskite oxide with high room-temperature mobility, a property that is highly desirable for a channel material in transistors. However, its low density of states (DOS) makes it challenging to confine a high-density two-dimensional electron gas (2DEG). Using hybrid density functional theory, we calculate the band structure of BSO, its DOS, and its band offsets with candidate barrier materials, such as SrTiO3 (STO), LaInO3, and KTaO3. With the calculated material parameters as input, Schrodinger-Poisson simulations are then performed on BSO heterostructures to quantitatively address the issue of 2DEG confinement. The BSO/STO interface with a conduction-band offset of 1.14 eV limits the 2DEG density confined within BSO to 8×1013 cm−2. Strategies to improve the confinement via band-offset engineering are discussed.

First-principles analysis of electron transport in BaSnO 3

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Fundamental limits on the electron mobility of β-Ga2O3

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Impact of electric-field dependent dielectric constants on two-dimensional electron gases in complex oxides

(BSO) is a promising transparent conducting oxide (TCO) with reported room-temperature (RT) Hall mobility exceeding 320 cm

First-principles study of direct and indirect optical absorption in BaSnO3

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Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors

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Structure and energetics ofLaAlO3(001) surfaces

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Point defects, impurities, and small hole polarons inGdTiO3

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First-principles study of surface charging inLaAlO3/SrTiO3heterostructures

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Accurate and efficient band-offset calculations from density functional theory

. Among perovskite oxides, it has the highest RT mobility, about 30 times higher than that of the prototypical SrTiO