Katsuji Iguchi

Illumination condition and mask bias for 0.15-μm pattern with KrF and ArF lithography

In this paper the optimization of illumination condition and mask bias in semiconductor lithography is reported, in the case of using half-tone mask (HTM) and off-axis illumination (OAI). Its results are to control the line width and to enlarge the common process margin for both isolated and dense 0.18micrometers -0.15micrometers pattern with KrF and ArF lithography. It found that for 0.18micrometers pattern KrF needs every resolution enhancement technology, for example, HTM, OAI and iso/dense optical proximity correction. For 0.15micrometers pattern KrF needs more than 0.65NA additionally. On the other hand ArF needs less than 0.55NA.