Katsumasa Nakahara

V‐Shaped Organic Semiconductors With Solution Processability, High Mobility, and High Thermal Durability

V-shaped organic semiconductors have been designed and synthesized via a large-scale applicable synthetic route. Solution-crystallized films based on such molecules have demonstrated high-performance transistor properties with maximum mobilities of up to 9.5 cm(2) V(-1) s(-1) as well as pronounced thermal durability of up to 150 °C inherent in the V-shaped cores.

High‐Performance Solution‐Processable N‐Shaped Organic Semiconducting Materials with Stabilized Crystal Phase

N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm(2) V(-1) s(-1) (12.1 cm(2) V(-1) s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.

High performance oxygen-bridged N-shaped semiconductors with a stabilized crystal phase and blue luminescence

Here, we describe an oxygen-bridged N-shaped π-electron core, dinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]difuran (DNBDF), as a new entity of organic semiconducting materials. Interestingly, by introduction of flexible alkyl chains at appropriate positions, DNBDF π-cores exhibit solution processability, a highly stabilized crystal phase, high mobility, and blue luminescence as a solid.

CCDC 886147: Experimental Crystal Structure Determination

Related Article: Toshihiro Okamoto,Chikahiko Mitsui,Masakazu Yamagishi,Katsumasa Nakahara,Junshi Soeda,Yuri Hirose,Kazumoto Miwa,Hiroyasu Sato,Akihito Yamano,Takeshi Matsushita,Takafumi Uemura,Jun Takeya|2013|Adv.Mater.|25|6392|doi:10.1002/adma.201302086