Katsunari Obata

Metal-insulator-semiconductor-type organic light-emitting transistor on plastic substrate

The authors report the characteristics of novel metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs). The drain current and luminescent intensity of the MIS-OLET can be controlled by changing hole injection carriers by applying a gate bias voltage. In addition, the high performance (400cd∕m2 at VD=−8V) of MIS-OLETs fabricated on a plastic substrate as well as on a glass substrate is demonstrated and described.

Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors

We developed metal–insulator–semiconductor-type organic light-emitting transistors (MIS-OLETs), and improved their properties by optimizing the device structure. MIS-OLETs showed a maximum drain current of ID = -149 µA, maximum luminance of 1034 cd/m2 (VD = -20 V, VG = -50 V) and on/off ratio of over 104. Moreover an active-matrix display using MIS-OLETs on a plastic substrate was fabricated. The developed 16×16 active-matrix-drive organic light-emitting transistors (AMOLET) showed excellent properties by optimizing device structure.