Kayla A. Cooley

Direct measurement of chemical distributions in heterogeneous coatings.

Chemical warfare agents (CWA) can be absorbed by variety of materials including polymeric coatings like paints through bulk liquid contact, thus presenting touch and vapor hazards to interacting personnel. In order for accurate hazard assessments and subsequent decontamination approaches to be designed, it is necessary to characterize the absorption and distribution of highly toxic species, as well as their chemical simulant analogs, in the subsurface of engineered, heterogeneous materials. Using a combination of judicious sample preparation in concert with scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS), it should be possible to directly measure the uptake and distribution of CWA simulants in the subsurface of complex multilayer coatings. Polyurethane and alkyd coatings were applied to aluminum and silicon substrates and contaminated with 2-chloroethyl ethyl sulfide (CEES) and dimethyl methylphosphonate (DMMP). The surfaces and cross-sectional interfaces of the contaminated coatings were probed with SEM-EDS to provide imaging, spectral, and elemental mapping data of the contaminant-material systems. This work demonstrated SEM-EDS capability to detect and spatially resolve unique elemental signatures of CWA simulants within military coatings. The visual and quantitative results provided by these direct measurements illustrate contaminant spatial distributions, provide order-of-magnitude approximations for diffusion coefficients, and reveal material characteristics that may impact contaminant transport into complex coating materials. It was found that contaminant uptake was significantly different between the topcoat and primer layers.

Evaporated manganese films as a starting point for the preparation of thin-layer MnOx water-oxidation anodes

A novel method to prepare anodes for water electrolysis cells has been developed, which starts from layers of elemental manganese deposited by physical vapour deposition (PVD) on indium-doped tin oxide (ITO). Oxidation in dry air at 300 °C transforms this metallic Mn layer into a manganese(II)-rich MnOx coating (x = 1–1.3), which also contains a buried layer of an In–Sn alloy originating from reactions with the ITO support. The MnOx films are well connected to the underlying substrate and act as efficient catalysts for water-oxidation catalysis (WOC) at neutral pH. Detailed post-operando analyses using XRD, SEM, TEM and XAS revealed that the dense MnO/Mn3O4 film is virtually not affected by 2 h of electrochemical WOC at E ≈ +1.8 V vs. RHE, corresponding well to the observed good stability of catalytic currents, which is unusual for such thin layers of a MnOx catalyst. The current densities during electrolyses are so far low (i ≈ 50–100 μA cm−2 at pH 7), but optimization of the preparation process may allow for significant improvements. This new, rather easy, and adaptable preparation method for stable, thin-layer MnOx water-oxidation anodes could thus prove to be very useful for a variety of applications.

Cosputtered Calcium Manganese Oxide Electrodes for Water Oxidation

Calcium manganese oxide films were prepared by cosputter deposition from Mn and CaMnO3 targets and evaluated for their suitability as catalysts for the oxygen evolution reaction (OER). Scanning electron microscopy (SEM) revealed a compact morphology for the as-deposited films and the formation of nanorodlike features on the surfaces after annealing at 600 °C. X-ray-photoelectron-spectroscopy analysis showed that the surface oxidation state is close to +III (as in Mn2O3) for the as-deposited films and increases slightly to a mixture of III and IV after annealing occurs in dry air at 400-600 °C. Glancing-incidence X-ray diffraction (GIXRD) suggested that the CaMnxOy films are amorphous even when heated to 600 °C. However, transmission electron microscopy (TEM) showed that there is actually a polycrystalline component of the film, which best matches Mn3O4 (hausmannite with the average Mn oxidation state of ∼+2.7) but may have a slightly expanded unit cell because of the incorporation of Ca. Electrochemical analyses revealed that the as-deposited CaMnxOy films were OER-inactive. In contrast, annealing at 400 or 600 °C resulted in an increase of ∼15-fold in the current densities, which reached j ≅ 1.5 mA·cm-2 at OER overpotentials of η ≈ 550 mV in cyclic voltammetry (CV) sweeps. For the same η, annealed CaMnxOy electrodes also showed good electrochemical stabilities during 2 h of electrolysis, as rather constant steady-state current densities of j ≅ 0.4-0.5 mA·cm-2 were observed. The thicknesses and surface morphologies of the CaMnxOy films did not change during the electrochemical measurements, indicating that corrosion was negligible. In comparison with a previous study in which Ca-free thin layers of MnOx were evaluated, the results demonstrate that Ca2+ incorporation can enhance the OER activity of MnOx electrocatalysts prepared by sputter deposition. This work provides guidance for designing new electrodes for water oxidation on the basis of the abundant and nontoxic elements manganese and calcium.

Pd and Au Contacts to SnS: Thermodynamic Predictions and Annealing Study

Tin(II) sulfide (SnS) is emerging as an attractive p-type absorber layer material for thin film photovoltaics, which motivates the search for Ohmic, low-resistance contacts for SnS. In this study, Pd and Au contacts were prepared on sputter-deposited SnS films and electrically characterized both as-deposited and after annealing of the contacts. Ternary phase diagrams were also calculated to help predict whether the chosen metals would react with the SnS film. Pd was expected to react with the SnS film, while Au was expected to be in thermodynamic equilibrium. The Pd contacts appeared reactive, and their resistance was minimized with post-deposition annealing at 400°C, while the Au contacts showed little change upon annealing and remained unreactive.

Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ∼60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ∼60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( Rc) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H2O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H2O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the Rc (ρc) of 0.006 Ω·mm (8 × 10-9 Ω·cm2) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10-8 Ω·cm2) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10-9 Ω·cm2) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10-8 Ω·cm2). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported contact resistances on GeTe.

Very low-resistance Mo-based Ohmic contacts to GeTe

Low-resistance and thermally stable Ohmic contacts are essential for radio frequency switches based on the unique phase change properties of GeTe. Herein, Mo-based Ohmic contacts to p-type GeTe are reported, including the effect of pre-metallization surface preparation and annealing on Mo/Ti/Pt/Au contacts. In-situ Ar+ plasma treatment resulted in a very low contact resistance of 0.004 ± 0.002 Ω mm (5 ± 3 × 10−9 Ω cm2), which could not be achieved using ex-situ surface treatments, highlighting the need for oxide-free interfaces to obtain very low contact resistance using Mo-based contacts. Experiments aimed at creating a more Ge- or Te-rich interface yielded higher contact resistances in both cases. The contact resistance increased for short-term annealing (30 min) above 200 °C and for long-term annealing (1 week) at 200 °C. No solid-state reaction between Mo and GeTe was observed using transmission electron microscopy with energy dispersive spectroscopy. However, Te migrated from GeTe after annealing at ...