Kazuhiko Shimomura

Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect

We have successfully demonstrated a GaInAs/InP multiple quantum well (MQW)-based wavelength switch composed of the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. Since optical path length differences between waveguides in the array were achieved through refractive index differences that were controlled by SiO 2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), wavelength demultiplexing, and the output port switching in each wavelength of light by the refractive index change in the array waveguides through the thermo-optic effect were achieved. We have obtained the wavelength switching and the change of transmission spectra in each output ports.

Wide Emission Wavelength InAs/InP Quantum Dots Grown by Double-Capped Procedure Using MOVPE Selective Area Growth

A growth technique for wide emission wavelength quantum dots (QDs) via the Stranski-Krastanov (S-K) growth mode using a double-cap procedure and metal-organic vapor phase epitaxy (MOVPE) selective area growth is proposed. By using the double-cap procedure, we have improved the uniformity of the QDs height. Selective area growth by low-pressure MOVPE using a SiO2 narrow stripe mask array pattern was carried for controlling and widening the emission wavelength range of the QDs in 16 stripe mask array waveguides. We have successfully demonstrated QD characteristics under various growth conditions, and have realized 120 nm emission wavelength range in 16 array, five layer InAs QD waveguides.

InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure

InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.

Switching characteristics in variable refractive-index waveguide array by carrier injection

We have demonstrated a carrier-injection-type wavelength switch composed of the straight waveguide array using GaInAs/InP MQW with linearly varying refractive index distribution fabricated by selective MOVPE.

InAs QDs broadband LED using double-cap procedure and selective MOVPE growth

More than 400nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.

Switching characteristics in variable index arrayed waveguide wavelength selective switch

Four wavelength switching was successfully demonstrated in the wavelength selective switch using GaInAs/InP MQW variable index arrayed waveguide by thermo-optic (TO) effect. Four wavelength lights were switched and demultiplexed between the four output ports.

Waveguide design of variable refractive-index waveguide array demultiplexer and wavelength selective switch

We have obtained the structual dependence on the performance of wavelength demultiplexing and switching in the variable refractive-index waveguide array using BPM simulation, and we have experimentally examined the improvement of crosstalk in this device.

Selective MOVPE grown semiconductor optical waveguide array and its application for optical devices

Fabrication and application for wavelength demultiplexer, wavelength selective switch and light emitting diode of a novel GaInAs/InP MQW and InAs/InP QDs waveguide array with gradually varying bandgap wavelength by using selective MOVPE growth are presented.