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Dive into the research topics where Kazumasa Kiyomi is active.

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Featured researches published by Kazumasa Kiyomi.


Journal of Crystal Growth | 1997

Dependence of deposition selectivity for MOVPE of AlGaAs using HCl gas on the orientation of the substrate and the orientation of the stripe of SiNx masks

Katsushi Fujii; Kenji Shimoyama; Nobuyuki Hosoi; Kazumasa Kiyomi; Atsunori Yamauchi; Hideki Gotoh

Abstract The conditions required to avoid MOVPE growth of AlGaAs on SiNx masks used to define windows has been investigated as a function of the orientation of the substrate, the orientation of the stripe as well as the temperature in the presence of HCl gas. The selectivity is enhanced for growth on (100) vicinal surfaces and particularly for higher growth temperatures. The selectivity is considered to be related to the atomic bonding geometry in the window and on the volatility of the group III halides.


Physica Status Solidi (a) | 2008

High‐quality nonpolar m ‐plane GaN substrates grown by HVPE

Kenji Fujito; Kazumasa Kiyomi; Tae Mochizuki; Hirotaka Oota; Hideo Namita; Satoru Nagao; Isao Fujimura


Materials Transactions | 2007

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

Hiroyuki Shibata; Yoshio Waseda; Hiromichi Ohta; Kazumasa Kiyomi; Kenji Shimoyama; Kenji Fujito; Hirobumi Nagaoka; Yuji Kagamitani; Rayko Simura; Tsuguo Fukuda


Archive | 1999

Semiconductor light emitting device and manufacturing method for the same

Makiko Hashimoto; Nobuyuki Hosoi; Kenji Shimoyama; Katsushi Fujii; Yoshihito Sato; Kazumasa Kiyomi


Archive | 2005

Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate

Kazumasa Kiyomi; Hirobumi Nagaoka; Hirotaka Oota; Isao Fujimura


Archive | 2000

Semiconductor optical device apparatus

Kenji Shimoyama; Nobuyuki Hosoi; Kazumasa Kiyomi; Yoshihito Sato; Satosi Mitsubishi Chemical Corp. Kikuchi


Archive | 2013

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT- EMITTING DEVICE

Kenji Fujito; Kazumasa Kiyomi


Archive | 2006

Method for manufacturing monocrystal garium-nitride substrate

Narihiro Doi; Isao Fujimura; Kazumasa Kiyomi; 成博 土井; 和正 清見; 勇夫 藤村


Archive | 2010

Gallium nitride-based material and method of manufacturing the same

Hiroyuki Shibata; Yoshio Waseda; Kenji Shimoyama; Kazumasa Kiyomi; Hirobumi Nagaoka


Archive | 2011

NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF

Shuichi Kubo; Kenji Shimoyama; Kazumasa Kiyomi; Kenji Fujito; Yutaka Mikawa

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Kenji Shimoyama

Mitsubishi Chemical Corporation

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Isao Fujimura

Mitsubishi Chemical Corporation

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Kenji Fujito

Mitsubishi Chemical Corporation

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Hirobumi Nagaoka

Mitsubishi Chemical Corporation

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Hirotaka Oota

Mitsubishi Chemical Corporation

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Hideki Gotoh

Mitsubishi Chemical Corporation

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Nobuyuki Hosoi

Mitsubishi Chemical Corporation

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Atsunori Yamauchi

Mitsubishi Chemical Corporation

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