Kazunori Tsuge

Properties and structure of a‐SiC:H for high‐efficiency a‐Si solar cell

A series of experimental investigations on optical and optoelectronic properties of methane‐ and ethylene‐based a‐SiC:H films has been made. The chemical bonding structure of two kinds of a‐ SiC:H films has also been explored from infrared (IR) absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on methane‐ and ethylene‐based a‐SiC:H. The methane‐based a‐SiC:H film shows one or two orders of magnitude larger photoconductivity recovery effect of doping than the ethylene‐ based one. IR absorption analysis shows that the methane‐based a‐SiC:H film is recognized as a rather ideal amorphous SiC alloy as compared with the ethylene‐based one. It has been found through these investigations that the methane‐based a‐SiC:H film is superior to the ethylene‐ based one as a window material. Utilizing the methane‐based a‐SiC:H, an 8% efficiency barrier has been broken through with an a‐SiC:H/a‐Si:H heterojunction structure.

Characterization of a-SiC: H as a Window Material for p-i-n a-Si Solar Cells

A series of experimental investigations on the characterization of methane based and ethylene based a-SiC: H as a window mateial has been made. Chemical bonding structure of two kinds of a-SiC: H films has also been explored from infra-red absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on methane based and ethylene based a-SiC: H. The methane based a-SiC: H/a-Si : H heterojunction solar cell shows a larger short-circuit current density than the ethylene based one. IR absorption analysis shows that methane based a-SiC: H film is a rather ideal amorphous SiC alloy as compared with the ethylene based one. It has been found through these investigations that the chemical bonding structure is an important factor for a window material.

Distribution of Electrode Elements near Contacts and Junction Layers in Amorphous Silicon Solar Cell

Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In, electrode elements, in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In–Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and accomplishes high cell performances, having the thickness of the SnO2 layer about 200 A.

8% Efficiency a-SiC:H/a-Si:H Heterojunction Solar Cells

An experimental investigation for the wide gap window material in the amorphous silicon solar cell is shown on methane based and ethylene based a-SiC:H. The methane based a-SiC:H/a-Si:H heterojunction solar cell shows a larger short-circuit current density than the ethylene based one. From IR absorption analysis, methane based a-SiC:H film is recognized a rather ideal amorphous SiC alloy as compared with ethylene based one. It has been found through these investigations that the chemical bonding structure is an important factor for a window material. 8% efficiency barrier has been firstly broken through with this methane based a-SiC:H/a-Si:H heterojunction solar cell.

Development Of Flexible A-Sic/A-Si Heterojunction Solar Cells And Stable A-Sic/A-Si Tandem Cells With Blocking Barriers

The research and development of amorphous silicon solar cells at Kanegafuchi Chemical Industry Co. Ltd.(Kaneka) are introduced. In 1981, a wide gap a-SiC and a-SiC/a-Si hetero-junction solar cells were developed through joint research with Osaka University. Then flexible amorphous solar cell utilized the a-SiC/a-Si cell were developed and industrialized for the consumer market in 1983. To reduce the cost, a large capacity of deposition system were developed and built at Sakamoto plant in 1985. As to the instability of a-Si solar cell, a new and stable tandem cell has been developed which shows noble stability under both sun light and thermal conditions.