Kee Hoon Kim

High Mobility in a Stable Transparent Perovskite Oxide

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8×1019 cm-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm2 V-1 s-1 at a doping level of 4.4×1020 cm-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 °C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical properties and first-principles calculations. We find that almost doping-independent mobility of 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad doping range from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4 ohm^-1cm^-1 reached at the latter carrier density is comparable to the highest value. We attribute the high mobility to several physical properties of (Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding, small disorder effects due to the doping away from the SnO2 conduction channel, and reduced carrier scattering due to the high dielectric constant. The observation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainly attributed to additional carrier-scatterings which are presumably created by the lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The main optical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and the in-gap states only slightly increased, thus maintaining optical transparency in the visible region. Based on these, we suggest that the doped BaSnO3 system holds great potential for realizing all perovskite-based, transparent high-frequency high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.

Thermal and electronic transport properties and two-phase mixtures in La(5/8-x)Pr(x)Ca(3/8)MnO3

We measured thermal conductivity kappa, thermoelectric power S, and electric conductivity sigma of La(5/8-x)Pr(x)Ca(3/8)MnO3, showing an intricate interplay between metallic ferromagnetism (FM) and charge ordering (CO) instability. The change of kappa, S, and sigma with temperature (T) and x agrees well with the effective medium theories for binary metal-insulator mixtures. This agreement clearly demonstrates that with the variation of T as well as x, the relative volumes of FM and CO phases drastically change and percolative metal-insulator transition occurs in the mixture of FM and CO domains.

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films

The authors fabricated Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. The authors measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.

Realization of giant magnetoelectricity in helimagnets.

We show that low field magnetoelectric (ME) properties of helimagnets Ba0.5Sr1.5Zn2(Fe1-xAlx)12O22 can be efficiently tailored by the Al-substitution level. As x increases, the critical magnetic field for switching electric polarization is systematically reduced from approximately 1 T down to approximately 1 mT, and the ME susceptibility is greatly enhanced to reach a giant value of 2.0x10{4} ps/m at an optimum x=0.08. We find that control of the nontrivial orbital moment in the octahedral Fe sites through the Al substitution is crucial for fine-tuning the magnetic anisotropy and obtaining the conspicuously improved ME characteristics.

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

Electric field control of nonvolatile four-state magnetization at room temperature.

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba0.52Sr2.48Co2Fe24O41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62μ(B)/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.

Competing magnetic phases on a kagomé staircase

We present thermodynamic and neutron data on Ni3V2O8, a spin-1 system on a kagomé staircase. The extreme degeneracy of the kagomé antiferromagnet is lifted to produce two incommensurate phases at finite T--one amplitude modulated, the other helical--plus a commensurate canted antiferromagnet for T-->0. The H-T phase diagram is described by a model of competing first and second neighbor interactions with smaller anisotropic terms. Ni3V2O8 thus provides an elegant example of order from subleading interactions in a highly frustrated system.

Large effects of dislocations on high mobility of epitaxial perovskite Ba0.96La0.04SnO3 films

We studied the relationship between the mobility and dislocation density for recently discovered high-mobility Ba0.96La0.04SnO3 thin-films and found that the carrier density and mobility of the film, as high as 4.0×1020 cm−3 and 70 cm2 V−1s−1, respectively, decreased as the dislocation density increased. We determined the values for dislocation density using transmission electron microscopy and atomic force microscopy after surface etching. We found that the effect of dislocations on the mobility was large, when compared with that for GaN with a similar dislocation density. The importance of dislocation scattering in the perovskite structure is emphasized, especially in a low-carrier-density regime.

Observation of the Josephson effect in Pb/Ba1-xKxFe2As2 single crystal junctions.

We have fabricated c-axis Josephson junctions on single crystals of Ba1-xKxFe2As2 by using Pb as the counterelectrode in two geometries, planar and point contact. Junctions in both geometries show resistively shunted junction I-V curves below the T{C} of the counterelectrode. Microwave induced steps were observed in the I-V curves, and the critical currents are suppressed with an in-plane magnetic field with well-defined modulation periods indicating that the Josephson current is flowing in a manner consistent with the small to intermediate sized junction limit. I{C}R{N} products of up to 0.3 mV have been observed in these junctions at 4.2 K. The observation of Josephson coupling along the c axis between Ba1-xKxFe2As2 and a conventional superconductor suggests the existence of an s-wave symmetry in this class of iron pnictide superconductors.