Kei Takashina

Controlled multiple quantum coherences of nuclear spins in a nanometre-scale device

The analytical technique of nuclear magnetic resonance (NMR) is based on coherent quantum mechanical superposition of nuclear spin states. Recently, NMR has received considerable renewed interest in the context of quantum computation and information processing, which require controlled coherent qubit operations. However, standard NMR is not suitable for the implementation of realistic scalable devices, which would require all-electrical control and the means to detect microscopic quantities of coherent nuclear spins. Here we present a self-contained NMR semiconductor device that can control nuclear spins in a nanometre-scale region. Our approach enables the direct detection of (otherwise invisible) multiple quantum coherences between levels separated by more than one quantum of spin angular momentum. This microscopic high sensitivity NMR technique is especially suitable for probing materials whose nuclei contain multiple spin levels, and may form the basis of a versatile multiple qubit device.

Pauli-spin-blockade transport through a silicon double quantum dot

We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.

Valley polarization in Si(100) at zero magnetic field.

The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley polarization exist in (100) silicon even at zero magnetic field.

Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and

Intersubband Scattering in Double-Gate MOSFETs

295\phantom{\rule{0.3em}{0ex}}\mathrm{K}

Temperature-dependent cyclotron resonance in a hybridized electron–hole system in InAs/GaSb heterostructures

. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor electrons rather than conduction-band electrons. In a range of doping concentration between around 2.1 and

Breakdown of the quantum Hall effect in an electron-hole system

8.7\ifmmode\times\else\texttimes\fi{}{10}^{17}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}

Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

, we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

100\phantom{\rule{0.3em}{0ex}}\mathrm{K}