Keiji Sugi

4.1: Low-Temperature-Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits

We have reduced threshold voltage shift of IGZO TFTs processed at 200°C under bias-temperature stress of Vg = 20 V at 70°C for 2000 s to 0.22 V by optimizing IGZO deposition and annealing conditions. A flexible AMOLED display with integrated gate driver circuits has been demonstrated.

25.4: High-Brightness Large-Area White OLED Fabricated by Meniscus Printing Process

We demonstrated high-brightness large-area, white organic light-emitting diode (OLED) consisting of printing-processed organic semiconductor layers. Meniscus printing process was applied to the substrate with 2 μm-high stripe-shape auxiliary electrodes. The OLED panel showed white emission all over the whole emitting area of 58 mm × 52 mm, high average luminance of 10,000 cd/m2, luminance uniformity of 40 %, and high luminous flux of 95 lm.

33.1: A 3.2‐in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique

A novel formation process for TFT using our proposed novel selective transfer technique, which enables low cost TFT fabrication on a large and flexible substrate, is proposed. This technique is used to fabricate a 3.2-inch LCD Panel using amorphous silicon TFT transferred on glass substrate for the first time.