Keita Nakano
Kyushu University
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Featured researches published by Keita Nakano.
IEEE Transactions on Nuclear Science | 2018
Seiya Manabe; Yukinobu Watanabe; Wang Liao; Masanori Hashimoto; Keita Nakano; H. Sato; Tadahiro Kin; Shin Ichiro Abe; Koji Hamada; Motonobu Tampo; Yasuhiro Miyake
We have performed an irradiation test of low-energy positive and negative muons on 65-nm ultra-thin body and thin buried oxide silicon-on-insulator static random access memories. The single event upset (SEU) cross sections were measured systematically as a function of incident muon momentum and operating supply voltage. The experimental results show that the negative muon SEUs occur at about three times higher rate than the positive muon ones at the supply voltage of 0.5 V when the incident muons stop near the sensitive volume (SV). A Monte-Carlo simulation with the particle and heavy ion transport code system (PHITS) was carried out using a simple SV model. The simulation based on the PHITS using the SV model is found to reproduce generally well the momentum dependence of the measured SEU cross sections for both positive and negative muons. From the simulation, the charged particles and secondary ions having significant influence on SEUs are specified and the differences between negative and positive muons are discussed.
IEEE Transactions on Nuclear Science | 2018
Wang Liao; Masanori Hashimoto; Seiya Manabe; Yukinobu Watanabe; Shin Ichiro Abe; Keita Nakano; H. Sato; Tadahiro Kin; Koji Hamada; Motonobu Tampo; Yasuhiro Miyake
Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.
Physics Letters B | 2016
He Wang; Hideaki Otsu; H. Sakurai; D. S. Ahn; Masayuki Aikawa; P. Doornenbal; N. Fukuda; T. Isobe; Shunsuke Kawakami; S. Koyama; Toshiyuki Kubo; Shigeru Kubono; G. Lorusso; Y. Maeda; Ayano Makinaga; S. Momiyama; Keita Nakano; M. Niikura; Y. Shiga; Pär Anders Söderström; Hiroshi Suzuki; Hiroyuki Takeda; Satoshi Takeuchi; R. Taniuchi; Ya. Watanabe; Yu. Watanabe; H. Yamasaki; Koichi Yoshida
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment | 2017
Shouhei Araki; Yukinobu Watanabe; Mizuki Kitajima; Hiroki Sadamatsu; Keita Nakano; Tadahiro Kin; Yosuke Iwamoto; Daiki Satoh; Masayuki Hagiwara; Hiroshi Yashima; T. Shima
Progress of Theoretical and Experimental Physics | 2017
He Wang; Hideaki Otsu; H. Sakurai; D. S. Ahn; Masayuki Aikawa; Takashi Ando; Shouhei Araki; Sidong Chen; N. Chiga; P. Doornenbal; N. Fukuda; T. Isobe; Shunsuke Kawakami; S. Kawase; Tadahiro Kin; Y. Kondo; S. Koyama; Shigeru Kubono; Y. Maeda; Ayano Makinaga; Masafumi Matsushita; Teiichiro Matsuzaki; S. Michimasa; S. Momiyama; Shunsuke Nagamine; Takashi Nakamura; Keita Nakano; M. Niikura; Tomoyuki Ozaki; Atsumi Saito
Progress of Theoretical and Experimental Physics | 2017
S. Kawase; Keita Nakano; Yukinobu Watanabe; He Wang; Hideaki Otsu; H. Sakurai; Deuk Soon Ahn; Masayuki Aikawa; Takashi Ando; Shouhei Araki; Sidong Chen; N. Chiga; P. Doornenbal; N. Fukuda; T. Isobe; Shunsuke Kawakami; Tadahiro Kin; Y. Kondo; S. Koyama; Shigeru Kubono; Y. Maeda; Ayano Makinaga; Masafumi Matsushita; Teiichiro Matsuzaki; S. Michimasa; S. Momiyama; Shunsuke Nagamine; Takashi Nakamura; M. Niikura; Tomoyuki Ozaki
Energy Procedia | 2017
He Wang; Hideaki Otsu; H. Sakurai; D. S. Ahn; N. Chiga; P. Doornenbal; N. Fukuda; T. Isobe; Toshiyuki Kubo; Shigeru Kubono; Giusseppe Lorusso; Pär Anders Söderström; Hiroshi Suzuki; Hiroyuki Takeda; Y. Watanabe; Koichi Yoshida; Teiichiro Matsuzaki; Yohei Shimizu; T. Sumikama; Meiko Uesaka; S. Kawase; Keita Nakano; Yukinobu Watanabe; Shouhei Araki; Tadahiro Kin; Satoshi Takeuchi; Y. Togano; Takashi Nakamura; Y. Kondo; Tomoyuki Ozaki
2016 International Conference on Nuclear Data for Science and Technology, ND 2016 | 2017
Shouhei Araki; Yukinobu Watanabe; Mizuki Kitajima; Hiroki Sadamatsu; Keita Nakano; Tadahiro Kin; Yosuke Iwamoto; Daiki Satoh; Masayuki Hagiwara; Hiroshi Yashima; T. Shima
2016 International Conference on Nuclear Data for Science and Technology, ND 2016 | 2017
S. Kawase; Ygbrinobu Watanabe; He Wang; Hideaki Otsu; H. Sakurai; Satoshi Takeuchi; Y. Togano; Takashi Nakamura; Ygbrie Maeda; Degbr Soon Ahn; Masaygbri Aikawa; Shouhei Araki; Sidong Chen; Nobuygbri Chiga; P. Doornenbal; Naoki FGBRuda; T. Ichihara; T. Isobe; Shunsgbre Kawakami; Tadahiro Kin; Yosgbre Kondo; S. Koyama; Toshiygbri Kubo; S. Kubono; M. Kurokawa; Ayano Makinaga; Masafumi Matsushita; Teiichiro Matsuzaki; S. Michimasa; S. Momiyama
2016 International Conference on Nuclear Data for Science and Technology, ND 2016 | 2017
He Wang; Hideaki Otsu; H. Sakurai; D. S. Ahn; Masayuki Aikawa; Takashi Ando; Shouhei Araki; Sidong Chen; N. Chiga; P. Doornenbal; N. Fukuda; T. Isobe; Shunsuke Kawakami; S. Kawase; Tadahiro Kin; Y. Kondo; Shupei Koyama; Shigeru Kubono; Y. Maeda; Ayano Makinaga; Masafumi Matsushita; Teiichiro Matsuzaki; S. Michimasa; S. Momiyama; Shunsuke Nagamine; Takashi Nakamura; Keita Nakano; M. Niikura; Tomoyuki Ozaki; Atsumi Saito