Keizo Adomi

Characterization of AiGaP/GaP Heterostructures Grown by MOVPE

Abstract High quality Al x Ga 1- x P/GaP heteroepitaxial layers were grown by a barrel-type multiwafer metalorganic vapor phase epitaxy system. Fundamental aspects concerning the growth and the heterostructures, such as distribution coefficient of Al, critical layer thickness, doping properties, and band discontinuities at the heterojunctions, have been investigated.

Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia

Doping characteristics of nitrogen in AlGaP grown by metalorganic vapor phase epitaxy have been investigated using ammonia as the nitrogen source. It was found that nitrogen could be successfully incorporated into AlGaP up to as much as 1×1020/cm3 assisted by the gas phase parasitic reaction between trimethylaluminum and ammonia, while nitrogen incorporation into GaP was difficult. Nitrogen incorporation was found to be dependent on several factors such as ammonia concentration, Al composition, V/III ratio, and growth temperature. Exciton recombination bound to isoelectronic nitrogen in AlGaP was observed for the first time by photoluminescence measurement.