Ken Goto

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

Thick high-purity β-Ga2O3 layers of high crystalline quality were grown homoepitaxially by halide vapor phase epitaxy (HVPE) using gaseous GaCl and O2 on (001) β-Ga2O3 substrates prepared by edge-defined film-fed growth. The surface morphology and structural quality of the grown layer improved with increasing growth temperature. X-ray diffraction ω-rocking curves for the (002) and (400) reflections for the layer grown at 1000 °C had small full widths at half maximum. Secondary ion mass spectrometry and electrical characteristics revealed that the growth of high-purity β-Ga2O3 layers with low effective donor concentration (Nd − Na < 1013 cm−3) is possible by HVPE.

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

We investigated the temperature-dependent electrical properties of Pt/Ga2O3 Schottky barrier diodes (SBDs) fabricated on n–-Ga2O3 drift layers grown on single-crystal n+-Ga2O3 (001) substrates by halide vapor phase epitaxy. In an operating temperature range from 21 °C to 200 °C, the Pt/Ga2O3 (001) Schottky contact exhibited a zero-bias barrier height of 1.09–1.15 eV with a constant near-unity ideality factor. The current–voltage characteristics of the SBDs were well-modeled by thermionic emission in the forward regime and thermionic field emission in the reverse regime over the entire temperature range.

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals

There is growing interest in low-symmetry metal oxides because of their potential use in high-power electronics capable to sustain very high voltages. Very little is known about their fundamental physical properties, such as transverse and longitudinal optical phonon modes, dielectric constants, and how free charge carriers couple with lattice vibrations. This lack of information is partially due to the complexity by which these properties intertwine due to the low symmetry crystal systems. Here, the authors describe a general pathway to the analysis of long-wavelength experiments for monoclinic and triclinic crystal systems, and they report for the first time a complete set of phonon modes for the monoclinic phase of gallium oxide. These parameters may arrive just in time to support computational optimization of charge and heat transport for device designs. The concept for analysis of long wavelength properties in monoclinic and triclinic crystal systems can help access a widely uncharted field in condensed matter physics.

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

We study optical transitions from a periodic array of InP/InAs/InP core-multishell nanowires (CMNs) having a wurtzite crystal structure by using photoluminescence (PL) and PL excitation (PLE) spectroscopy. Observing a large Stokes shift between PL and PLE spectra, a blueshift of the PL peak with a cube-root dependence on the excitation power and a slow and nonexponential decay of PL with an effective decay time of 16 ns suggest a type-II band alignment. Band-offset calculation based on the “model-solid theory” of Van de Walle [Phys. Rev. B 39, 1871 (1989)] supports type-II band lineup if the InAs layer in the wurtzite CMNs is assumed to sustain compressive strain in all directions.

Ga 2 O 3 Schottky barrier diodes with n − -Ga 2 O 3 drift layers grown by HVPE

The new wide-bandgap oxide semiconductor, gallium oxide (Ga₂O₃), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baligas figure of merit of Ga₂O₃ is expected to be much larger than those of SiC and GaN due primarily to Ga₂O₃s extremely large bandgap of 4.5~4.9 eV, which will enable Ga₂O₃ power devices with higher breakdown voltage (V_br) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga₂O₃ is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga₂O₃ thin films on single-crystal Ga₂O₃ substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga₂O₃ Schottky barrier diodes (SBDs) with epitaxial Si-doped n^--Ga₂O₃ drift layers grown by HVPE.

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

Temperature-dependent exciton resonance energies Eexciton in β-Ga2O3 single crystals are studied by using polarized reflectance measurement. The Eexciton values exhibit large energy changes in the range of 179–268 meV from 5 to 300 K. The IR-active Au and Bu optical phonon modes are selectively observed in the IR spectroscopic ellipsometry spectra by reflecting the polarization selection rules. The longitudinal optical (LO) phonon energies can be divided into three ranges: ℏωLO = 35–48, 70–73, and 88–99 meV. The broadening parameters, which are obtained from the reflectance measurements, correspond to the lower two ranges of ℏωLO at low temperature and 75 meV above 150 K. The large Eexciton changes with temperature in β-Ga2O3 are found to be originated from the exciton-LO-phonon interaction.

Electronic properties of the residual donor in unintentionally doped .BETA.-Ga2O3

Electron paramagnetic resonance was used to study the donor that is responsible for the n-type conductivity in unintentionally doped (UID) β-Ga2O3 substrates. We show that in as-grown materials, the donor requires high temperature annealing to be activated. In partly activated materials with the donor concentration in the 1016 cm−3 range or lower, the donor is found to behave as a negative-U center (often called a DX center) with the negative charge state DX− lying ∼16–20 meV below the neutral charge state d0 (or Ed), which is estimated to be ∼28–29 meV below the conduction band minimum. This corresponds to a donor activation energy of Ea∼44–49 meV. In fully activated materials with the donor spin density close to ∼1 × 1018 cm−3, donor electrons become delocalized, leading to the formation of impurity bands, which reduces the donor activation energy to Ea∼15–17 meV. The results clarify the electronic structure of the dominant donor in UID β-Ga2O3 and explain the large variation in the previously reported ...

Thermal stability of beta-Ga2O3 in mixed flows of H-2 and N-2

The thermal stability of β-Ga2O3(010) substrates was investigated at atmospheric pressure between 250 and 1450 °C in a flow of either N2 or a mixture of H2 and N2 using a radio-frequency induction furnace. The β-Ga2O3 surface was found to decompose at and above 1150 °C in N2, while the decomposition of β-Ga2O3 began at only 350 °C in the presence of H2. Heating β-Ga2O3 substrates in gas flows containing different molar fractions of H2 demonstrated that the decomposition was promoted by increasing the H2 molar fractions. Thermodynamic analysis showed that the dominant reactions are in N2 and in a mixed flow of H2 and N2. The second-order reaction with respect to H2 determined for the mixed flows agrees with the experimental results for the dependence of the β-Ga2O3 decomposition rates on the H2 molar fraction.

Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic beta-Ga2O3

We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic b ...