Ken-ichi Nonaka

Current amplification in nonhomogeneous‐base structure and static induction transistor structure

Current‐amplification mechanisms for a nonhomogeneous‐base bipolar phototransistor (BPT) and a static induction phototransistor (SIPT) are discussed in this paper, and comparisons are made to the homogeneous‐ and or the gradually‐graded‐base BPT. It is shown that the current‐transport mechanism of the BPT with a nonhomogeneously doped ⋅ ⋅ ⋅p+pp+p ⋅ ⋅ ⋅(⋅ ⋅ ⋅ n+nn+n ⋅ ⋅ ⋅) base is similar to that of the SIPT if the p (n) base potential is capacitively controllable both by the p+ (n+) base and collector voltages. For the n‐channel SIPT in the open‐gate mode of operation, the potential‐barrier height for holes stored in the p+‐gate region is higher than the potential‐barrier height for electrons in the source region by the value of VbiGS−VbiG*S, where the VbiGS is the built‐in potential between the p+‐gate region and the n+‐source region of the SIPT and VbiG*S is the potential‐barrier height between the intrinsic gate G* in the channel and the n+‐source region. In fact, a very high dc optical gain G of more ...

Totally light controlled static induction thyristor

Abstract A Totally Light Controlled Static Induction Thyristor is described in this paper concentrating on the optical direct/indirect triggering and quenching mechanisms. Up to the present time, using two GaAs infrared LEDs ( λ = 880 nm , T r = 12 ns ), 300V - 1.7A is directly triggered and quenched in a turn-on time of 1.9μs and a turn-off time of 6μs, 540V - 1A is indirectly triggered and directly quenched in a turn-on time of 545ns and a turn-off time of 7.15μs, and 400V - 1A is indirectly switched in a turn-on time of 630ns and a turn-off delay time of 660ns.

Totally Light Controlled Thyristor-Optically Triggerable and Optically Quenchable Static Induction Photo-Thyristor

Optically Triggerable and optically quenchable Static Induction Photo-Thyristor (SIP Thy) is described in this paper concentrating on the optical direct/indirect Triggering and optical quenching mechanisms. Using only two LEDs drived by CMOS logic IC, 300V-2A is directly triggered and quenched in a turn-on time of 6.2psec and a turn-off time of 15psec, and 540V-lA is indirectly switched in a turn-on time of 545nsec and a turn-off time of 7.lSpsec, until now.

A very high sensitivity and very high speed light triggered and light quenched static induction thyristor (LTQSIThy)

The purpose of this paper is to describe a new operational mode of the Static Induction Thyristor (SIThy), namely the Light Triggered and Light Quenched Static Induction Thyristor (LTQSIThy) characterized by the very high triggering and quenching optical sensitivity and very high speed performance. The LTQSIThy is the totally light controlled self-turn-off type power switching device which is constructed by the optically triggerable Static Induction Photo-Thyristor (SIPThy) and the light sensitive element which is connected or integrated to the gate terminal of the SIPThy.