Ken-ichiro Sakai

Temperature-Dependent Current-Induced Magnetization Switching in Fe3Si/FeSi2/Fe3Si Trilayered Films

Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance–injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance–injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

Fabrication of Spin Valve Junctions Based on Fe3Si/FeSi2/Fe3Si Trilayered films

Yuki Asai, Ken-ichiro Sakai*, Kazuya Ishibashi, Kaoru Takeda, and Tsuyoshi Yoshitake** 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan 3Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan

Spin Valve behavior in Current-Perpendicular-to-Plane Crossover Structural Fe3Si/FeSi2/Fe3Si Trilayered junctions

Yuki Asai, Ken-ichiro Sakai*, Kazuya Ishibashi, Kaoru Takeda, and Tsuyoshi Yoshitake** 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan 3Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 8110295, Japan

Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe3Si/FeSi2 artificial lattices with various cross-sectional areas

Ken-ichiro Sakai*, Yūki Asai, Yūta Noda, Takeshi Daio, Aki Tominaga, Kaoru Takeda, and Tsuyoshi Yoshitake* 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan 3International Research Center for Hydrogen Energy, Kyushu University, Fukuoka 8190395, Japan 4Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 8110295, Japan

Observation of magnetization alignment switching in Fe3Si/FeSi2 artificial lattices by polarized neutron reflection

Ken-ichiro Sakai*, Yūki Asai, Masayasu Takeda, Kazuya Ishibashi, Yūta Noda, Kaoru Takeda, and Tsuyoshi Yoshitake* 1Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan 2Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan 3Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai, Ibaraki 3191195, Japan 4Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 8110295, Japan

Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe3Si/FeSi2 artificial lattices

Current-perpendicular-to-plane (CPP) junctions of Fe3Si/FeSi2 were fabricated from Fe3Si/FeSi2 artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe3Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 × 101 A/cm2, which is at least four orders smaller than the values that have ever been reported.