Kendal Clark

Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges

Heteroepitaxy Writ Thin A common method for creating a thin single-crystal layer of a semiconductor for use in an electronic device is heteroepitaxy—growing the layer on the face of a single crystal of a different material that acts as a template for assembly. Liu et al. (p. 163) now describe a similar process in which the edge of a graphene layer that was grown on a copper surface directs the assembly of a monolayer of hexagonal boron nitride. The boron nitride grew from inside edge of holes created in the graphene layer. The interface and the relative orientation of the two layers were determined by a variety of scanning microscopy and surface diffraction techniques. The orientation of a growing boron nitride film is determined by its graphene template and not the underlying substrate. By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system—graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.

Surface-Induced Orientation Control of CuPc Molecules for the Epitaxial Growth of Highly Ordered Organic Crystals on Graphene

The epitaxial growth and preferred molecular orientation of copper phthalocyanine (CuPc) molecules on graphene has been systematically investigated and compared with growth on Si substrates, demonstrating the role of surface-mediated interactions in determining molecular orientation. X-ray scattering and diffraction, scanning tunneling microscopy, scanning electron microscopy, and first-principles theoretical calculations were used to show that the nucleation, orientation, and packing of CuPc molecules on films of graphene are fundamentally different compared to those grown on Si substrates. Interfacial dipole interactions induced by charge transfer between CuPc molecules and graphene are shown to epitaxially align the CuPc molecules in a face-on orientation in a series of ordered superstructures. At high temperatures, CuPc molecules lie flat with respect to the graphene substrate to form strip-like CuPc crystals with micrometer sizes containing monocrystalline grains. Such large epitaxial crystals may potentially enable improvement in the device performance of organic thin films, wherein charge transport, exciton diffusion, and dissociation are currently limited by grain size effects and molecular orientation.

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO2 substrate, with one-to-one correspondence to boundary structures. Boundaries coinciding with the substrate step on SiC exhibit a significant potential barrier for electron transport of epitaxial graphene due to the reduced charge transfer from the substrate near the step edge. Moreover, monolayer-bilayer boundaries exhibit a high resistance that can change depending on the height of substrate step coinciding at the boundary. In CVD graphene, the resistance of a grain boundary changes with the width of the disordered transition region between adjacent grains. A quantitative modeling of boundary resistance reveals the increased electron Fermi wave vector within the boundary region, possibly due to boundary induced charge density variation. Understanding how resistance change with domain (grain) boundary structure in graphene is a crucial first step for controlled engineering of defects in large-scale graphene films.

Molecular Kondo Chain

An important development in recent synthesis strategies is the formation of electronically coupled one and two-dimensional organic systems for potential applications in nanoscale molecule-based devices. Here, we assemble one-dimensional spin chains by covalently linking basic molecular building blocks on a Au(111) surface. Their structural properties are studied by scanning tunneling microscopy and the Kondo effect of the basic molecular blocks inside the chains is probed by scanning tunneling spectroscopy. Tunneling spectroscopic images reveal the existence of separate Kondo regions within the chains while density functional theory calculations unveil antiferromagnetic coupling between the spin centers.

Room‐Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Spatially resolved one-dimensional boundary states in graphene–hexagonal boron nitride planar heterostructures

Two-dimensional interfaces between crystalline materials have been shown to generate unusual interfacial electronic states in complex oxides. Recently, a one-dimensional interface has been realized in hexagonal boron nitride and graphene planar heterostructures, where a polar-on-nonpolar one-dimensional boundary is expected to possess peculiar electronic states associated with edge states of graphene and the polarity of boron nitride. Here we present a combined scanning tunnelling microscopy and first-principles theory study of the graphene-boron nitride boundary to provide a first glimpse into the spatial and energetic distributions of the one-dimensional boundary states down to atomic resolution. The revealed boundary states are about 0.6 eV below or above the Fermi level depending on the termination of the boron nitride at the boundary, and are extended along but localized at the boundary. These results suggest that unconventional physical effects similar to those observed at two-dimensional interfaces can also exist in lower dimensions.

Enhanced electrical conductivity in poly(3-hexylthiophene)/fluorinated tetracyanoquinodimethane nanowires grown with a porous alumina template.

We report on improved electrical conductivity in poly(3-hexylthiophene) (P3HT)/2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) composite nanowires grown using an anodized aluminum oxide (AAO) template. The electrical conductivity of individual nanowire measured by four-probe scanning tunneling microscopy shows that F4-TCNQ molecules are effectively doped into P3HT by capillary force. The resistivity is tuned in the 0.1-10 Ω cm range by changing the F4-TCNQ concentration from 10 to 0.1 wt % and is 2-4 orders of magnitude smaller than that of the corresponding P3HT/F4-TNCQ thin film composites. The AAO template-assisted synthesis approach thus appears to be effective for high chemical doping and for improving the electrical conductivity of the molecular wires.

Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

We show that Friedel charge oscillation near an interface opens a gap at the Fermi energy for electrons with wave vectors perpendicular to the interface. If the Friedel gaps on two sides of the interface are different, a nonequlibrium effect - shifting of these gaps under bias - leads to asymmetric transport upon reversing the bias polarity. The predicted transport asymmetry is revealed by scanning tunneling potentiometry at monolayer-bilayer interfaces in epitaxial graphene on SiC (0001). This intriguing interfacial transport behavior opens a new avenue towards novel quantum functions such as quantum switching.

Nanoscale periodic modulations on sodium chloride surface revealed by tuning fork atomic force microscopy

The sodium chloride surface is one of the most common platforms for the study of catalysts, thin film growth, and atmospheric aerosols. Here we report a nanoscale periodic modulation pattern on the surface of a cleaved NaCl single crystal, revealed by non-contact atomic force microscopy with a tuning fork sensor. The surface pattern shows two orthogonal domains, extending over the entire cleavage surface. The spatial modulations exhibit a characteristic period of 5.4 nm, along <110> crystallographic directions of the NaCl. The modulations are robust in vacuum, not affected by the tip-induced electric field or gentle annealing (<300 °C); however, they are eliminated after exposure to water and an atomically flat surface can be recovered by subsequent thermal annealing after water exposure. A strong electrostatic charging is revealed on the cleavage surface which may facilitate the formation of the observed metastable surface reconstruction.

Atomistic Constructions by using Scanning Tunneling Microscope Tip

We demonstrate an atomic scale construction scheme, which is performed at an area as small as a few tens of nanometer square. In this atomic scale construction site, all the basic building blocks, single atoms, are extracted locally using a scanning-tunneling-microscope tip from the substrate. These extracted atoms are then precisely positioned on the surface to form desired structures. After the completion of the construction, the remaining debris are removed and the undesired holes near the construction site are filled with atoms/clusters to tidy up the area. This entire construction scheme closely resembles our real world construction process and can be considered as its atomic-scale analog.