Kenneth G. Glogovsky

Long-wavelength 128*128 GaAs quantum well infrared photodetector arrays

The authors discuss the device physics and detector performance of quantum well infrared photodetectors (QWIPS). On the basis of these results, large two-dimensional arrays of 128*128 pixels were fabricated and measured. The excellent long-wavelength imaging results (99% of the pixels working and a noise-equivalent temperature difference NE Delta T=10 mK) demonstrate the potential of this new GaAs QWIP technology.

Low‐voltage, high‐saturation, optically bistable self‐electro‐optic effect devices using extremely shallow quantum wells

Symmetric self‐electro‐optic effect devices (S‐SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum‐confined Stark shift, room‐temperature optical bistability is obtained with no applied bias. The extremely shallow symmetric‐SEED (symmetric E‐SEED) exhibits contrast ratios (CRs)≂3.5, with biasses<5 V, demonstrating system applicability and compatability with electronics. Large system tolerances Δλ≂6 nm and maximum bistability loop width ≂70% are also obtained. Moreover, due to fast carrier escape times, the symmetric E‐SEED exhibits useful CRs≳2 even at continuous‐wave intensities ≳70 μW/μm2.

10 Gb/s transmission using an electroabsorption-modulated distributed Bragg reflector laser with integrated semiconductor optical amplifier

We demonstrate for the first time a 10 Gb/s EA-modulated wavelength-selectable DBR laser module with an integrated semiconductor optical amplifier. Transmission over 82 km of standard fiber with -3 dBm average power on 20 channels spaced by 50 GHz is achieved.

40Gb/s tandem electro-absorption modulator

NRZ and RZ data transmission at 40Gb/s are demonstrated for the first time using buried heterostructure tandem electro-absorption modulators monolithically integrated with a semiconductor optical amplifier and input/output spot-size converters. Zero penalty RZ transmission over a 100km dispersion managed link is achieved.

Electro-absorption modulated 1.55 /spl mu/m wavelength selectable DFB array using hybrid integration

We demonstrate for the first time an EA-modulated hybrid integrated wavelength selectable laser comprised of 1.55 /spl mu/m DFB laser array and amplifier/modulator chips fabricated using a novel spot-size converter integration technique, and optically connected via silica-on-silicon waveguides. The device operates at 2.5 Gbits over 16 50 GHz spaced channels with SMSR>33 dB, peak power from +1.6 to -6.2 dBm, and r.f. extinction ratio >0.39 dB for 2.6 V/sub p-p/ drive.

Producibility of GaAs quantum-well infrared photodetector arrays

We discuss in detail the producibility issues associated with GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs). Excellent uniformity in growth (thickness, doping, and Al concentration) and in processing are expected to lead to high yield, high performance large area infrared imaging arrays.

Long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors

We discuss the physics and 128 X 128 array imaging performance of GaAs/AlxGa1-xAs n-doped quantum well infrared photodetectors (QWIPs). The device physics of novel p-doped QWIPs which respond to normal incidence radiation of also presented.

High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers

In order to meet the increasing market needs for uncooled lasers for such applications as fiber- in-the-loop, high efficiency, high power, and highly reliable 1.3 micrometer uncooled InGaAsP/InP strained multi-quantum well Fabry-Perot lasers were fabricated with 50 mm wafer processing. Slope efficiency as high as 0.39 W/A and peak power as high as 46 mW at 85 degrees Celsius was obtained by optimizing the device structure for high temperature operation. We have also demonstrated excellent uniformity and reproducibility over 6 wafers. Reliability was also shown to be very good. More than 10,000 chips sites are available on a 50 mm wafer, and the cost is expected to be low. Because of the high performance, these lasers are expected to be used for various applications.