Kenneth T. Nicholson

Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy)silanol

Abstract Tri-( tert -butoxy)silanol (tBOS) rapidly forms a self-limited ∼10-A-thick silicon oxide film upon exposure to a Si(100)-2×1 surface at 300 K. The majority of hydrocarbon spontaneously desorbs at this temperature. Heating to ∼700 K removes the remaining tert -butoxy groups. The films were characterized by conventional X-ray photoelectron spectroscopy (XPS), synchrotron XPS of the Si 2p core-level and valence band regions, and reflection absorption infrared spectroscopy (RAIRS).

Reflection–absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters

Reflection–absorption infrared spectroscopy has been employed to observe Si–H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H8Si8O12/Si(100−2×1 to 700 °C, Si–H bonds as a part of HSiO3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850 °C. Reversible hydrogen/deuterium exchange for these entities is also directly observed.

The differential reactivity of octahydridosilsesquioxane on Si(1 0 0)-2×1 and Si(1 1 1)-7×7: a comparative experimental study

Scanning tunneling microscopy (STM), in conjunction with X-ray photoemission (XPS) and reflection-absorption infrared (RAIRS) spectroscopy, has been used to investigate the reaction of octahydridosilsesquioxane clusters (H(8)Si(8)O(12)) on the Si(100)-2x1 and Si(111)-7x7 surfaces. The clusters exhibit a markedly different reactivity upon exposure to the two clean silicon surfaces. STM data is presented that, in conjunction with XPS and RAIRS data, provides numerous constraints upon possible geometries for the chemisorbed clusters. The sum of the data is consistent with a dissociative reaction mechanism on Si(100)-2x1, resulting in cluster attachment to the surface via a single vertex. Conversely, data of Si(111)-7x7 subject to a saturation exposure of H(8)Si(8)O(12) is presented that is highly suggestive of cluster decomposition on the surface.