Kent D. Choquette

Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays

Bend Me, Stretch Me In the push toward flexible electronics, much research has focused on using organic conducting materials, including light-emitting diodes (LEDs), because they are more readily processed using scalable techniques. Park et al. (p. 977) have developed a series of techniques for depositing and assembling inorganic LEDs onto glass, plastic, or rubber. Conventional processing techniques are used to connect the LEDs in order to create flexible, stretchable displays, which, because the active diode material only covers a small part of the substrate, are mostly transparent. Methods to fabricate and assemble inorganic light-emitting diodes provide a route toward transparent, flexible, or stretchable display devices. We have developed methods for creating microscale inorganic light-emitting diodes (LEDs) and for assembling and interconnecting them into unusual display and lighting systems. The LEDs use specialized epitaxial semiconductor layers that allow delineation and release of large collections of ultrathin devices. Diverse shapes are possible, with dimensions from micrometers to millimeters, in either flat or “wavy” configurations. Printing-based assembly methods can deposit these devices on substrates of glass, plastic, or rubber, in arbitrary spatial layouts and over areas that can be much larger than those of the growth wafer. The thin geometries of these LEDs enable them to be interconnected by conventional planar processing techniques. Displays, lighting elements, and related systems formed in this manner can offer interesting mechanical and optical properties.

Advances in selective wet oxidation of AlGaAs alloys

We review the chemistry, microstructure, and processing of buried oxides converted from AlGaAs layers using wet oxidation. Hydrogen is shown to have a central role in the oxidation reaction as the oxidizing agent and to reduce the intermediate predict As/sub 2/O/sub 3/ to As. The stable oxide is amorphous (Al/sub x/Ga/sub 1-x/)/sub 2/O/sub 3/ which has no defects along the oxide/semiconductor interfaces but can exhibit strain at the oxide terminus due to volume shrinkage. The influence of gas flow, gas composition, temperature, Al-content, and layer thickness on the oxidation rate are characterized to establish a reproducible process. Linear oxidation rates with Arrhenius activation energies which strongly depend upon AlAs mole fraction are found. The latter produces strong oxidation selectivity between AlGaAs layers with slightly differing Al-content. Oxidation selectivity to thickness is also shown for layer thickness <60 nm. Differences between the properties of buried oxides converted from AlGaAs and AlAs layers and the impact on selectively oxidized vertical cavity laser lifetime are reported.

Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries

We show the two-fold polarization degeneracy of etched air-post vertical-cavity surface emitting laser diodes can be lifted and a dominant polarization state selected through use of anisotropic transverse laser cavity geometries. For lasers with rhombus-shaped cavities, fundamental mode lasing emission linearly polarized along one specified crystal axis is obtained up to twice the threshold current. For dumbbell-shaped lasers, fundamental mode lasing emission linearly polarized along one specified crystal axis is maintained over the entire operating range of the device producing a maximum orthogonal polarization suppression ratio of 14 dB.<<ETX>>

Temperature dependence of gain‐guided vertical‐cavity surface emitting laser polarization

We show the polarization characteristics of gain‐guided vertical‐cavity surface emitting lasers are related to the temperature‐dependent cavity optical resonance and laser gain spectral alignment. Simultaneous nearly degenerate orthogonal eigen polarization states are observed at and above lasing threshold. The partitioning of power between the linear polarization states is shown to depend on the relative spectral overlap of the cavity resonance of each state with the gain. Near the condition of cavity resonance/gain alignment, an abrupt switch in the dominant eigen polarization with a region of polarized output fluctuations is evident. Rotation of the eigen polarization directions relative to the crystal axes is also observed at temperatures where the gain is blue shifted from the cavity resonances.

Comprehensive numerical modeling of vertical-cavity surface-emitting lasers

We present a comprehensive numerical model for vertical-cavity surface-emitting lasers that includes all major processes affecting cw operation of axisymmetric devices. In particular, our model includes a description of the 2-D transport of electrons and holes through the cladding layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the device, and a multilateral-mode effective index optical model. The optical gain acquired by photons traversing the quantum wells is computed including the effects of strained band structure and quantum confinement. We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting “tapes” based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.

Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers

The two-dimensional photonic crystal (2-D PhC) structure has been investigated as a method for lateral mode control of vertical-cavity surface-emitting lasers (VCSELs). The 2-D PhC structures were designed using an equivalent index model developed for photonic crystal fibers combined with a plane wave expansion method. The etching depth dependence of the PhC structure was incorporated for the first time to design practical devices. 2-D PhC-confined VCSELs are demonstrated to operate in single PhC-confined mode using either a single- or seven-point defect.

Fabrication and performance of selectively oxidized vertical-cavity lasers

We report the high yield fabrication and reproducible performance of selectively oxidized vertical-cavity surface emitting lasers. We show that linear oxidation rates of AlGaAs without an induction period allows reproducible fabrication of buried oxide current apertures within monolithic distributed Bragg reflectors. The oxide layers do not induce obvious crystalline defects, and continuous wave operation in excess of 650 h has been obtained. The high yield fabrication enables relatively high laser performance over a wide wavelength span. We observe submilliamp threshold currents over a wavelength range of up to 75 nm, and power conversion efficiencies at 1 mW output power of greater than 20% over a 50-nm wavelength range.<<ETX>>

Cavity characteristics of selectively oxidized vertical‐cavity lasers

We show that a buried oxide layer forming a current aperture in an all epitaxial vertical‐cavity surface emitting laser has a profound influence on the optical and electrical characteristics of the device. The lateral index variation formed around the oxide current aperture leads to a shift in the cavity resonance wavelength. The resonance wavelength under the oxide layer can thus be manipulated, independent of the as‐grown cavity resonance, by adjusting the oxide layer thickness and its placement relative to the active region. In addition, the electrical confinement afforded by the oxide layer enables record low threshold current densities and threshold voltages in these lasers.

Vertical-cavity surface emitting lasers: moving from research to manufacturing

After more than a decade of research, vertical-cavity surface emitting lasers (VCSELs) are making the transition into the manufacturing arena. We review unique VCSEL properties found in their structure, growth, fabrication, and performance, which have precipitated their commercial acceptance. The short optical cavity that is formed between two distributed Bragg reflector mirrors is a distinctive VCSEL attribute. The spectral alignment between the resonance of the optical cavity formed by these mirrors and the laser gain bandwidth is shown to influence the VCSEL performance. Thus, epitaxial VCSEL growth by metalorganic vapor-phase epitaxy aided by in situ reflectance monitoring is discussed with an emphasis on uniformity and reproducibility. We also describe the fabrication techniques and VCSEL structures used to obtain transverse electrical and optical confinement, including etched air-post, ion-implanted, and selectively oxidized VCSELs. For the latter, wet oxidation of AlGaAs to form buried-oxide apertures has enabled record laser performance, such as ultralow threshold current and high efficiency. Numerous applications for VCSELs have been identified that leverage their manufacturing and performance advantages.