Kentaro Tani

Fundamental-transverse-mode high-power AlGaInP laser diode with windows grown on facets

The window-grown-on-facet (WGF) structure was first implemented to high power fundamental-transverse-mode AlGaInP lasers so as to reduce facet degradation. A kink-free CW maximum output power of 295 mW, about twice as much as for an identical non-WGF laser, was achieved at the wavelength of 680 mm; and fundamental-transverse-mode operation up to 150 mW was confirmed. Front and rear window layers are undoped (Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P grown by MOCVD, while the internal laser was grown by solid-source MBE. The effect of the regrowth of the window layer was evaluated by time-resolved photoluminescence, and a threefold improvement in photoluminescence decay time was observed. >

Reliable red-emitting laser diodes grown by solid source molecular beam epitaxy

Abstract We achieved over 1000 h stable continuous wave (CW) operation of AlGaInP laser diodes (LDs) with output power of 30 mW at 50°C by using all solid source molecular beam epitaxy (MBE). In this paper the essential points for reliability are described. If sufficient outgassing of source materials was performed, secondary ion mass spectrometry (SIMS) signals of hydrogen and oxygen from the as-grown layers became small. Reduction of these impurities dramatically increased photoluminescence (PL) intensity and decreased the threshold currents of LDs. Growth condition dependence of device performance was also investigated. Whilst the acceptable ranges of V/III ratio and phosphorus cracking temperature needed to obtain reliable operation were extensive, the suitable growth temperature range was limited.

295 mW CW maximum output of AlGaInP laser diode with windows grown on facets

Up to 295 mW kink-free CW maximum output, about twice as much as the conventional one, was achieved by implementing the WGF (windows grown on facets) structure to AlGaInP laser diode.